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MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Order this document by MJE18204/D

Designer's Data Sheet

SWITCHMODE NPN Bipolar

Power Transistor for Electronic Light Ballast and Switching Power Supply Applications

The MJE/MJF18204 have an application specific state±of±the±art die dedicated to the electronic ballast (ªlight ballastº) and power supply applications.

•Improved Global Efficiency Due to Low Base Drive Requirements:

ÐHigh and Flat DC Current Gain h FE

ÐFast Switching

ÐNo Coil Required in Base Circuit for Fast Turn±Off (No Current Tail)

•Full Characterization at 125_C

•Motorola ª6 SIGMAº Philosophy Provides Tight and Reproducible Parametric Distributions

•Two Package Choices: Standard TO±220 or Isolated TO±220

MAXIMUM RATINGS

Rating		Symbol	MJE18204	MJF18204	Unit

Collector±Emitter Voltage		VCEO	600		Vdc
Collector±Base Voltage		VCBO	1200		Vdc
Collector±Emitter Voltage		VCES	1200		Vdc
Emitter±Base Voltage		VEBO	10		Vdc
Collector Current Ð Continuous		IC	5		Adc
Ð Peak (1)		ICM	10
Base Current Ð Continuous		IB	2		Adc
Ð Peak (1)		IBM	4
RMS Isolation Voltage (2)	Per Figure 22	VISOL1		4500	Volts
(for 1 sec, R.H. ≤ 30%)	Per Figure 23	VISOL2		3500
TC = 25°C	Per Figure 24	VISOL3		1500
*Total Device Dissipation @ TC = 25°C		PD	75	35	Watt
*Derate above 25_C			0.6	0.28	W/_C

Operating and Storage Temperature		TJ, Tstg	± 65 to 150		_C
THERMAL CHARACTERISTICS

Rating		Symbol	MJE18204	MJF18204	Unit

Thermal Resistance Ð Junction to Case		RqJC	1.65	3.55	_C/W
Ð Junction to Ambient		RqJA	62.5	62.5
Maximum Lead Temperature for Soldering		TL	260		_C
Purposes: 1/8″ from Case for 5 Seconds

(1)Pulse Test: Pulse Width = 5 ms, Duty Cycle v 10%.

(2)Proper strike and creepage distance must be provided.

MJE18204

MJF18204

POWER TRANSISTORS

5 AMPERES

1200 VOLTS

35 and 75 WATTS

CASE 221A±06

TO±220AB

CASE 221D±02

TO±220 FULLPACK

Designer's Data for ªWorst Caseº Conditions Ð The Designer 's Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit curves Ð representing boundaries on device characteristics Ð are given to facilitate ªworst caseº design.

Designer's and SWITCHMODE are trademarks of Motorola, Inc.

Motorola, Inc. 1995

MJE18204

MJF18204

ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Collector±Emitter Voltage

VCEO

600

660

Vdc

(IC = 1 mA, IB = 0)

Collector±Emitter Sustaining Voltage

Vdc

(IC = 100 mA, L = 25 mH)

VCEO(sus)

550

630

(IC = 200 mA, L = 25 mH, R = 2 Ω)

VCER(sus)

600

700

Collector±Base Breakdown Voltage

VCBO

1200

1300

Vdc

(ICBO = 1 mA, IE = 0)

Emitter±Base Breakdown Voltage

VEBO

12.9

Vdc

(IEBO = 1 mA, IC = 0)

Collector Cutoff Current (VCE = 600 V, IB = 0)

@ TC = 25°C

ICEO

200

μAdc

Collector Cutoff Current (VCE = 550 V, IB = 0)

@ TC = 125°C

2000

Collector Cutoff Current (VCE = Rated VCES, VBE = 0)

@ TC = 25°C

ICES

100

μAdc

@ TC = 125°C

500

Collector Cutoff Current (VCE = 1000 V, VBE = 0)

@ TC = 125°C

100

Collector Cutoff Current

ICBO

100

μAdc

(VCB = Rated VCB, IE = 0)

Emitter±Cutoff Current

IEBO

100

μAdc

(VEB = 10 Vdc, IC = 0)

ON CHARACTERISTICS

Base±Emitter Saturation Voltage

VBE(sat)

Vdc

(IC = 1 Adc, IB = 0.1 Adc)

0.83

1.1

(IC = 2 Adc, IB = 0.4 Adc)

0.92

1.25

Collector±Emitter Saturation Voltage

@ TC = 25°C

VCE(sat)

Vdc

(IC = 1 Adc, IB = 0.1 Adc)

0.3

@ TC = 125°C

0.7

1.25

(IC = 2 Adc, IB = 0.4 Adc)

@ TC = 25°C

0.3

0.6

@ TC = 125°C

0.8

1.25

DC Current Gain

@ TC = 25°C

hFE

(IC = 0.5 Adc, VCE = 3 Vdc)

@ TC = 125°C

(IC = 1 Adc, VCE = 1 Vdc)

@ TC = 25°C

@ TC = 125°C

(IC = 2 Adc, VCE = 1 Vdc)

@ TC = 25°C

@ TC = 125°C

(IC = 5 mAdc, VCE = 5 Vdc)

@ TC = 25°C

@ TC = 125°C

DYNAMIC CHARACTERISTICS

Current Gain Bandwidth (IC = 0.5 Adc, VCE = 10 Vdc, f = 1 MHz)

MHz

Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1 MHz)

Cob

200

Input Capacitance (VEB = 8 Vdc)

Cib

2000

DYNAMIC SATURATION VOLTAGE

Dynamic Saturation

IC = 2 Adc

@ 3 μs

@ TC = 25°C

VCE(dsat)

2.5

IB1 = 660 mAdc

Voltage:

@ TC = 125°C

7.5

VCC = 300 V

Determined 1 s and

3 μs respectively after

IC = 2 Adc

@ 3 μs

@ TC = 25°C

rising IB1 reaches

IB1 = 0.4 Adc

90% of final I

VCC = 300 V

@ TC = 125 C

2	Motorola Bipolar Power Transistor Device Data

					MJE18204		MJF18204
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)

	Characteristic		Symbol	Min	Typ	Max		Unit

SWITCHING CHARACTERISTICS: Resistive Load (D.C. ≤ 10%, Pulse Width = 20 μs)

Turn±on Time	IC = 2 Adc, IB1 = 0.4 Adc	@ TC = 25°C	ton		105	175		ns
	IB2 = 1 Adc
Turn±off Time	IB2 = 1 Adc	@ TC = 25°C	toff		1.75	2.5		μs
Turn±off Time	VCC = 300 Vdc	@ TC = 25°C	toff		1.75	2.5		μs
Turn±on Time	IC = 2 Adc, IB1 = 0.4 Adc	@ TC = 25°C	ton		95	200		ns
	IB2 = 0.4 Adc
Turn±off Time	IB2 = 0.4 Adc	@ TC = 25°C	toff		3.5	4.5		μs
Turn±off Time	VCC = 300 Vdc	@ TC = 25°C	toff		3.5	4.5		μs
Turn±on Time	IC = 0.7 Adc, IB1 = 50 mAdc	@ TC = 25°C	td		70	150		ns
	IC = 0.7 Adc, IB1 = 50 mAdc	@ TC = 25°C	tr		210	400		ns
	IB2 = 0.4 Adc		tr		210	400		ns
Turn±off Time	VCC = 125 Vdc		t		0.9	1.2		μs
	PW = 70 μs	@ TC = 25°C	s
	PW = 70 μs	@ TC = 25°C	tf		275	450		ns
			tf		275	450		ns
SWITCHING CHARACTERISTICS: Inductive Load (Vclamp = 300 V, VCC = 15 V, L = 200 μH)
Fall Time		@ TC = 25°C	tf		110	175		ns
	IC = 1 Adc	@ TC = 125°C			95
Storage Time	IC = 1 Adc	@ TC = 25°C	ts		1.35	2		μs
Storage Time	IB1 = 0.1 Adc	@ TC = 25°C	ts		1.35	2		μs
	IB1 = 0.1 Adc	@ TC = 125°C			1.9
	IB2 = 0.5 Adc	@ TC = 125°C			1.9
Crossover Time		@ TC = 25°C	tc		150	250		ns
		@ TC = 125°C			115
Fall Time		@ TC = 25°C	tf		120	200		ns
	IC = 2 Adc	@ TC = 125°C			180
Storage Time	IC = 2 Adc	@ TC = 25°C	ts		1.9	2.75		μs
Storage Time	IB1 = 0.4 Adc	@ TC = 25°C	ts		1.9	2.75		μs
	IB1 = 0.4 Adc	@ TC = 125°C			2.35
	IB2 = 1 Adc	@ TC = 125°C			2.35
Crossover Time		@ TC = 25°C	tc		190	300		ns
		@ TC = 125°C			180
Fall Time	IC = 2 Adc	@ TC = 25°C	tf		185	300		ns
Storage Time	IC = 2 Adc	@ TC = 25°C	ts		4	5		μs
Storage Time	IB1 = 0.4 Adc	@ TC = 25°C	ts		4	5		μs
Crossover Time	IB2 = 0.4 Adc	@ TC = 25°C	tc		350	500		ns
Crossover Time		@ TC = 25°C	tc		350	500		ns

Motorola Bipolar Power Transistor Device Data

MJE18204 MJF18204

TYPICAL STATIC CHARACTERISTICS

	100
		TJ = 125°C	TJ = 25°C		VCE = 1 V
		TJ = 125°C	TJ = 25°C
GAIN
, DC CURRENT	10	TJ = ± 20°C
, DC CURRENT
FE
h
	1
	0.01		0.1	1	10
			IC, COLLECTOR CURRENT (AMPS)

Figure 1. DC Current Gain @ 1 Volt

	100
		TJ = 125°C			VCE = 5 V
		TJ = 125°C
GAIN
, DC CURRENT	10	TJ = ± 20°C		TJ = 25°C
, DC CURRENT
FE
h
	1
	0.01		0.1	1	10
			IC, COLLECTOR CURRENT (AMPS)

Figure 3. DC Current Gain @ 5 Volts

	10
,VOLTAGE (VOLTS)			IC/IB = 10
	1	IC/IB = 5
		IC/IB = 5
	0.1
CE	0.1
CE
V				TJ = 125°C
				TJ = 125°C
				TJ = 25°C
	0.01
	0.01	0.1	1	10
		IC, COLLECTOR CURRENT (AMPS)

Figure 5. Collector±Emitter Saturation Voltage

	100
		TJ = 125°C	TJ = 25°C	VCE = 3 V
		TJ = 125°C	TJ = 25°C
GAIN
, DC CURRENT	10	TJ = ± 20°C
, DC CURRENT
FE
h
	1
	0.01	0.1	1	10
		IC, COLLECTOR CURRENT (AMPS)

Figure 2. DC Current Gain @ 3 Volts

	2
(VOLTS)				TJ = 25°C
(VOLTS)			4 A
			4 A
VOLTAGE			3 A
VOLTAGE	1	1.5 A	2 A
	1		2 A
,
CE
V		IC = 1 A
		IC = 1 A
	0
	10	100	1000	10000

IB, BASE CURRENT (mA)

Figure 4. Collector Saturation Region

	1.5
(VOLTS)	1
(VOLTS)	TJ = ± 20°C
VOLTAGE	TJ = ± 20°C
VOLTAGE	T	J	= 25°C
,	0.5	J
BE	0.5
BE
V	TJ = 125°C
	TJ = 125°C				IC/IB = 5
					IC/IB = 10
	0
	0.01		0.1	1	10

IC, COLLECTOR CURRENT (AMPS)

Figure 6. Base±Emitter Saturation Region

4	Motorola Bipolar Power Transistor Device Data

MJE18204 MJF18204

TYPICAL STATIC CHARACTERISTICS

	10000			1600
		TJ = 25°C		1400
		f(test) = 1 MHz		1200
(pF)				1200
(pF)	1000	Cib (pF)		1000
CAPACITANCE		Cib (pF)	t, TIME (ns)

				800
	100	Cob (pF)		600
C,	100
C,				400
				400
				200
	10	10	100	0
	1	10	100

	IC/IB = 10
	IC/IB = 5
								TJ =	125°C
								TJ =	25°C
							IB1	= IB2
							VCC = 300 V
							PW = 20		μs
0.5	1	1.5	2	2.5	3	3.5	4	4.5		5

VR, REVERSE VOLTAGE (VOLTS)	IC, COLLECTOR CURRENT (AMPS)
Figure 7. Capacitance	Figure 8. Resistive Switching, ton

	8			TJ = 125°C
				TJ = 125°C				IB1 = IB2
	7			TJ = 25°C				VCC = 300 V
								PW = 20 μs
	6				IC/IB = 5
μs)	5
(	5
TIME	4
t,	4
t,
	3
	2	IC/IB = 10
	2
	1
	0.5	1	1.5	2	2.5	3	3.5	4	4.5	5

IC, COLLECTOR CURRENT (AMPS)

Figure 9. Resistive Switching, toff

	6					IB1 = IB2
						IB1 = IB2
				IC = 1 A		VCC = 15 V
				IC = 1 A		VZ = 300 V
s)						VZ = 300 V
s)						LC = 200 μH
(μ	5					LC = 200 μH
, STORAGE TIME	5
, STORAGE TIME	4
si
t
		IC = 2 A			TJ = 125°C
		IC = 2 A			TJ = 25	°
	3				TJ = 25	C
	3	5			11
	3	5	7	9	11	13	15

hFE, FORCED GAIN

	6				TJ = 125°C
					TJ = 125°C	IB1 = IB2
					TJ = 25°C	VCC = 15 V
	5					VZ = 300 V
						LC = 200 μH
(ns)
t, TIME	4
t, TIME
	3	IC/IB = 5
	3
	2			IC/IB = 10
	2			2	2.5	3
	0.5	1	1.5	2	2.5	3	3.5
			IC, COLLECTOR CURRENT (AMPS)

Figure 10. Inductive Storage Time, tsi

1500			TJ = 125°C
I	= I		TJ = 125°C
B1		B2	TJ = 25°C
V		= 15 V	TJ = 25°C
CC
VZ	= 300 V		tc
LC = 200 μH			tc
1000
TIME (ns)			tfi
t,				tc
500				tc
500
				tfi
0
0		1	2	3
		IC, COLLECTOR CURRENT (AMPS)

Figure 11. Inductive Storage Time, tsi (hFE)	Figure 12. Inductive Switching,
	tc & tfi @ IC/IB = 5

Motorola Bipolar Power Transistor Device Data

Источник: https://studfile.net/preview/16503892/

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