Материал: mrf284rev3

The RF Sub±Micron MOSFET Line

Transistors MRF284

RF Power Field Effect

N±Channel Enhancement±Mode Lateral MOSFETs

MRF284S

Designed for PCN and PCS base station applications at frequencies from

1000 to 2600 MHz. Suitable for FM, TDMA, CDMA, and multicarrier amplifier

30 W, 2000 MHz, 26 V

applications. To be used in class A and class AB for PCN±PCS/cellular radio

and wireless local loop.

LATERAL N±CHANNEL

• Specified Two±Tone Performance @ 2000 MHz, 26 Volts

BROADBAND

RF POWER MOSFETs

Output Power = 30 Watts (PEP)

Power Gain = 9 dB

Efficiency = 30%

Intermodulation Distortion = ±29 dBc

• Typical Single±Tone Performance at 2000 MHz, 26 Volts

Output Power = 30 Watts (CW)

Power Gain = 9.5 dB

Efficiency = 45%

CASE 360B±01, STYLE 1

• Characterized with Series Equivalent Large±Signal Impedance Parameters

(MRF284)

• S±Parameter Characterization at High Bias Levels

• Excellent Thermal Stability

• Capable of Handling 10:1 VSWR, @ 26 Vdc, 2000 MHz, 30 Watts (CW)

Output Power

CASE 360C±03, STYLE 1

(MRF284S)

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Drain±Source Voltage

VDSS

65

Vdc

Gate±Source Voltage

VGS

± 20

Vdc

Total Device Dissipation @ TC = 25°C

PD

87.5

Watts

Derate above 25°C

0.5

W/°C

Storage Temperature Range

Tstg

± 65 to +150

°C

Operating Junction Temperature

TJ

200

°C

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Thermal Resistance, Junction to Case

RθJC

2.0

°C/W

ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Drain±Source Breakdown Voltage

V(BR)DSS

65

Ð

Ð

Vdc

(VGS = 0, ID = 10 μAdc)

Zero Gate Voltage Drain Current

IDSS

Ð

Ð

1.0

μAdc

(VDS = 20 Vdc, VGS = 0)

Gate±Source Leakage Current

IGSS

Ð

Ð

10

μAdc

(VGS = 20 Vdc, VDS = 0)

MOTOROLAMotorola, Inc. 1997RF DEVICE DATA

MRF284 MRF284S

1

Characteristic

Symbol

Min

Typ

Max

Unit

ON CHARACTERISTICS

Gate Threshold Voltage

VGS(th)

2.0

3.0

4.0

Vdc

(VDS = 10 Vdc, ID = 150 μAdc)

Gate Quiescent Voltage

VGS(q)

3.0

4.0

5.0

Vdc

(VDS = 26 Vdc, ID = 200 mAdc)

Drain±Source On±Voltage

VDS(on)

Ð

0.3

0.6

Vdc

(VGS = 10 Vdc, ID = 1.0 Adc)

Forward Transconductance

gfs

1.0

1.5

Ð

S

(VDS = 10 Vdc, ID = 1.0 Adc)

DYNAMIC CHARACTERISTICS

Input Capacitance

Ciss

Ð

43

Ð

pF

(VDS = 26 Vdc, VGS = 0, f = 1.0 MHz)

Output Capacitance

Coss

Ð

23

Ð

pF

(VDS = 26 Vdc, VGS = 0, f = 1.0 MHz)

Reverse Transfer Capacitance

Crss

Ð

1.4

Ð

pF

(VDS = 26 Vdc, VGS = 0, f = 1.0 MHz)

FUNCTIONAL TESTS (in Motorola Test Fixture)

Common±Source Power Gain

Gps

9

10.5

Ð

dB

(VDD = 26 Vdc, Pout = 30 W, IDQ = 200 mA,

f1 = 2000.0 MHz, f2 = 2000.1 MHz)

Drain Efficiency

η

30

35

Ð

%

(VDD = 26 Vdc, Pout = 30 W, IDQ = 200 mA,

f1 = 2000.0 MHz, f2 = 2000.1 MHz)

Intermodulation Distortion

IMD

Ð

±32

±29

dBc

(VDD = 26 Vdc, Pout = 30 W, IDQ = 200 mA,

f1 = 2000.0 MHz, f2 = 2000.1 MHz)

Input Return Loss

IRL

9

15

Ð

dB

(VDD = 26 Vdc, Pout = 30 W, IDQ = 200 mA,

f1 = 2000.0 MHz, f2 = 2000.1 MHz)

Common±Source Amplifier Power Gain

Gps

9

10.4

Ð

dB

(VDD = 26 Vdc, Pout = 30 W PEP, IDQ = 200 mA,

f1 = 1930.0 MHz, f2 = 1930.1 MHz)

Drain Efficiency

η

Ð

35

Ð

%

(VDD = 26 Vdc, Pout = 30 W PEP, IDQ = 200 mA,

f1 = 1930.0 MHz, f2 = 1930.1 MHz)

Intermodulation Distortion

IMD

Ð

±34

Ð

dBc

(VDD = 26 Vdc, Pout = 30 W PEP, IDQ = 200 mA,

f1 = 1930.0 MHz, f2 = 1930.1 MHz)

Input Return Loss

IRL

9

15

Ð

dB

(VDD = 26 Vdc, Pout = 30 W PEP, IDQ = 200 mA,

f1 = 1930.0 MHz, f2 = 1930.1 MHz)

Common±Source Amplifier Power Gain

Gps

8.5

9.5

Ð

dB

(VDD = 26 Vdc, Pout = 30 W CW, IDQ = 200 mA,

f1 = 2000.0 MHz)

Drain Efficiency

η

35

45

Ð

%

(VDD = 26 Vdc, Pout = 30 W CW, IDQ = 200 mA,

f1 = 2000.0 MHz)

Output Mismatch Stress

Ψ

(VDD = 26 Vdc, Pout = 30 W CW, IDQ = 200 mA,

No Degradation In Output Power

f1 = 2000.0 MHz, VSWR = 10:1,

at All Phase Angles)

MRF284 MRF284S

MOTOROLA RF DEVICE DATA

2

VGG(BIAS)

B1

B2

B3

B4

B5

B6

VDD(DCSupply)

+

+

+

+

C1

R1

C4

R2

C7

R3

C5

C8

C13

C15

R4

C12

R5

C14

R6 C17

_

±

L3

L4

RF

L1

L2

Z9

Z10

Z11

Z12

Z13

Z14

Z15

OUTPUT

RF

DUT

INPUT

C16

Z1

Z2

Z3

Z4

Z5

Z6

Z7

Z8

C10

C11

C6

C2

C3

C9

B1 ± B6

Ferrite Bead, Round

Z3

0.185″ x 0.080″ Microstrip

C1, C17

470 mF, 63 V, Mallory Electrolytic Capacitor

Z4

0.395″ x 0.080″ Microstrip

C2

0.6 ± 4.5 pF Johansen Gigatrim Variable Capacitors

Z5

0.490″ x 0.080″ Microstrip

C3, C9

0.8 ± 8.0 pF Johansen Gigatrim Variable Capacitors

Z6

0.035″ x 0.325″ Microstrip

C4, C14

0.1 mF Chip Capacitor, KEMET

Z7

0.240″ x 0.325″ Microstrip

C5, C15

91 pF ATC RF Chip Capacitors, Case ªBº

Z8

0.210″ x 0.515″ Microstrip

C6, C16

10 pF ATC RF Chip Capacitors, Case ªBº

Z9

0.130″ x 0.515″ Microstrip

C7, C12

1000 pF ATC RF Chip Capacitors, Case ªBº

Z10

0.080″ x 0.515″ Microstrip

C8, C13

5.1 pF ATC RF Chip Capacitors, Case ªBº

Z11

0.190″ x 0.325″ Microstrip

C10

2.7 pF ATC RF Chip Capacitors, Case ªBº

Z12

0.090″ x 0.325″ Microstrip

C11

0.4 ± 2.5 pF Johansen Gigatrim Variable Capacitors

Z13

0.515″ x 0.080″ Microstrip

L1

4 Turns, #27 AWG, 0.087″ OD, 0.050″ ID, 0.069″ Long, 10 nH

Z14

0.860″ x 0.080″ Microstrip

L2, L3

9 Turns, #26 AWG, 0.080″ OD, 0.046″ ID, 0.170″ Long, 30.8 nH

Z15

0.510″ x 0.080″ Microstrip

L4

2 Turns, #24 AWG, 0.85″ OD, 0.042″ ID, 0.064″ Long, 5.2 nH

Board

0.030″ Glass Teflon, 2 oz Copper,

R1 ± R6

12 W Fixed Film Chip Resistor 0.08″ x 0.13″

3 x 5″ Dimensions, Manufacturer;

Z1

0.145″ x 0.080″ Microstrip

Arlon, P/N: GX0300±55±22, er = 2.55

Z2

0.680″ x 0.080″ Microstrip

MOTOROLA RF DEVICE DATA

MRF284 MRF284S

3

VSUPPLY

+

+

R1

C1

R3

P1

+

VDD

B3

B4

B5

VDD

B1

B2

+

Q1

+

R9

R10

R11

+

C11

C13

C10

C15

C16

R6

C7 R7

C8 R8

R2

R4

Q2

R5

C9

C2

C4

±

L4

RF

L1

L3

Z10

Z11

Z12

Z13

Z14

Z15

Z16

OUTPUT

RF

DUT

INPUT

C14

Z1

Z2

Z3

Z4

Z5

Z6

Z7

Z8

Z9

C12

C17

L2

C3

C5

C6

B1 ± B5

Ferrite Bead, Round

R5

2 x 1500 W, Fixed Film Chip Resistor 0.08″ x 0.13″

C1, C9, C16

100 mF, 50 V, Electrolytic Capacitor, Sprague

R6

270 W, Fixed Film Chip Resistor, 0.08″ x 0.13″

C2, C13

51 pF, ATC RF Chip Capacitors, Case ªBº

R7 ± R11

12 W, Fixed Film Chip Resistor, 0.08″ x 0.13″

C3, C14

10 pF, ATC RF Chip Capacitors, Case ªBº

Z1

0.363″ x 0.080″ Microstrip

C4, C11

12 pF, ATC RF Chip Capacitors, Case ªBº

Z2

0.080″ x 0.080″ Microstrip

C5

0.8 ± 8.0 pF Variable Capacitor, Johansen Gigatrim

Z3

0.916″ x 0.080″ Microstrip

C6

4.7 pF, ATC RF Chip Capacitor, Case ªBº

Z4

0.517″ x 0.080″ Microstrip

C7, C15

91 pF, ATC RF Chip Capacitors, Case ªBº

Z5

0.050″ x 0.325″ Microstrip

C8

1000 pF, ATC RF Chip Capacitor, Case ªBº

Z6

0.050″ x 0.325″ Microstrip

C10

0.1 mF, Chip Capacitor, KEMET

Z7

0.071″ x 0.325″ Microstrip

C12, C17

0.6 ± 4.5 pF, Variable Capacitors, Johansen Gigatrim

Z8

0.125″ x 0.325″ Microstrip

L1

4 Turns, #27 AWG, 0.087″ OD, 0.050″ ID,

Z9

0.210″ x 0.515″ Microstrip

0.069″ Long, 10 nH

Z10

0.210″ x 0.515″ Microstrip

L2

5 Turns, #24 AWG, 0.083″ OD, 0.040″ ID,

Z11

0.235″ x 0.325″ Microstrip

0.128″ Long, 12.5 nH

Z12

0.02″ x 0.325″ Microstrip

L3, L4

9 Turns, #26 AWG, 0.080″ OD, 0.046″ ID,

Z13

0.02″ x 0.325″ Microstrip

0.170″ Long, 30.8 nH

Z14

0.510″ x 0.080″ Microstrip

P1

1000 Ohm Potentiometer, 1/2 W, 10 Turns

Z15

0.990″ x 0.080″ Microstrip

Q1

Transistor, NPN, Motorola P/N: MJD31, Case 369A±10

Z16

0.390″ x 0.080″ Microstrip

Q2

Transistor, PNP, Motorola P/N: MJD32, Case 369A±10

Raw PCB

R1

360 W, Fixed Film Chip Resistor 0.08″ x 0.13″

Material

0.030″ Glass Teflon, 2 oz Copper,

R2

2 x 12 kW, Fixed Film Chip Resistor 0.08″ x 0.13″

3 x 5″ Dimensions, Manufacturer;

R3

1 W, Wirewound, 5 W, 3% Resistor

Arlon, P/N: GX±0300±55±22, er = 2.55

R4

4 x 6.8 kW, Fixed Film Chip Resistor 0.08″ x 0.13″

MRF284 MRF284S

MOTOROLA RF DEVICE DATA

4

Figure 3. Output Power & Power Gain

Figure 4. Output Power versus Frequency

versus Input Power