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MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Order this document by MRF134/D

The RF MOSFET Line
RF Power Field-Effect Transistor
N±Channel Enhancement±Mode		MRF134
. . . designed for wideband large±signal amplifier and oscillator applications up
to 400 MHz range.
• Guaranteed 28 Volt, 150 MHz Performance
• Guaranteed 28 Volt, 150 MHz Performance
Output Power = 5.0 Watts
Output Power = 5.0 Watts
Minimum Gain = 11 dB			5.0 W, to 400 MHz
Efficiency Ð 55% (Typical)			N±CHANNEL MOS
• Small±Signal and Large±Signal Characterization		BROADBAND RF POWER
• Small±Signal and Large±Signal Characterization			FET
• Typical Performance at 400 MHz, 28 Vdc, 5.0 W			FET
• Typical Performance at 400 MHz, 28 Vdc, 5.0 W
Output = 10.6 dB Gain
• 100% Tested For Load Mismatch At All Phase Angles
• 100% Tested For Load Mismatch At All Phase Angles
With 30:1 VSWR
• Low Noise Figure Ð 2.0 dB (Typ) at 200 mA, 150 MHz
• Excellent Thermal Stability, Ideally Suited For Class A	D
• Excellent Thermal Stability, Ideally Suited For Class A
Operation
Operation

G			CASE 211±07, STYLE 2



	S


MAXIMUM RATINGS
MAXIMUM RATINGS

Rating		Symbol	Value	Unit

Drain±Source Voltage		VDSS	65	Vdc
Drain±Gate Voltage		VDGR	65	Vdc
(RGS = 1.0 MΩ)
Gate±Source Voltage		VGS	± 40	Vdc
Drain Current Ð Continuous		ID	0.9	Adc
Total Device Dissipation @ TC = 25°C		PD	17.5	Watts
Derate above 25°C			0.1	W/°C

Storage Temperature Range		Tstg	± 65 to +150	°C
THERMAL CHARACTERISTICS

Rating		Symbol	Value	Unit

Thermal Resistance, Junction to Case		RθJC	10	°C/W

Handling and Packaging Ð MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed.

REV 6

Motorola, Inc. 1994

ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.)

Characteristic	Symbol	Min	Typ	Max	Unit

OFF CHARACTERISTICS

Drain±Source Breakdown Voltage (VGS = 0, ID = 5.0 mA)	V(BR)DSS	65		Ð	Ð	Vdc
Zero Gate Voltage Drain Current (VDS = 28 V, VGS = 0)	IDSS	Ð		Ð	1.0	mAdc
Gate±Source Leakage Current (VGS = 20 V, VDS = 0)	IGSS	Ð		Ð	1.0	mAdc
ON CHARACTERISTICS

Gate Threshold Voltage (ID = 10 mA, VDS = 10 V)	VGS(th)	1.0		3.5	6.0	Vdc
Forward Transconductance (VDS = 10 V, ID = 100 mA)	gfs	80		110	Ð	mmhos
DYNAMIC CHARACTERISTICS

Input Capacitance	Ciss	Ð		7.0	Ð	pF
(VDS = 28 V, VGS = 0, f = 1.0 MHz)
Output Capacitance	Coss	Ð		9.7	Ð	pF
(VDS = 28 V, VGS = 0, f = 1.0 MHz)
Reverse Transfer Capacitance	Crss	Ð		2.3	Ð	pF
(VDS = 28 V, VGS = 0, f = 1.0 MHz)
FUNCTIONAL CHARACTERISTICS

Noise Figure	NF	Ð		2.0	Ð	dB
(VDS = 28 Vdc, ID = 200 mA, f = 150 MHz)
Common Source Power Gain	Gps					dB
(VDD = 28 Vdc, Pout = 5.0 W, IDQ = 50 mA)
f = 150 MHz (Fig. 1)		11		14	Ð
f = 400 MHz (Fig. 14)		Ð		10.6	Ð

Drain Efficiency (Fig. 1)	h	50		55	Ð	%
(VDD = 28 Vdc, Pout = 5.0 W, f = 150 MHz, IDQ = 50 mA)
Electrical Ruggedness (Fig. 1)	y
(VDD = 28 Vdc, Pout = 5.0 W, f = 150 MHz, IDQ = 50 mA,			No Degradation in Output Power
VSWR 30:1 at all Phase Angles)

R3*	R4				L4
R3*	R4				+ VDD = 28 V
					+ VDD = 28 V
D1	C7		+	C10	C11
			+
	L3	C8	± C9		C12
R2	L3	R5
R2
C5	C6				C4
	R1		L2		RF OUTPUT
			L2
L1
RF INPUT		DUT			C3
C1
C2

*Bias Adjust

C1, C4 Ð Arco 406, 15± 115 pF			L3 Ð 20 Turns, #20 AWG Enamel Wound on R5
C2	Ð Arco 403, 3.0± 35 pF		L4 Ð Ferroxcube VK±200 Ð 19/4B
C3	Ð Arco 402, 1.5± 20 pF		R1	Ð 68 W, 1.0 W Thin Film
C5, C6, C7, C8, C12 Ð 0.1 mF Erie Redcap			R2	Ð 10 k W, 1/4 W
C9	Ð	10 mF, 50 V	R3	Ð 10 Turns, 10 k W Beckman Instruments 8108
C10,		C11 Ð 680 pF Feedthru	R4	Ð 1.8 k W, 1/2 W
D1	Ð 1N5925A Motorola Zener		R5	Ð 1.0 M W, 2.0 W Carbon
L1 Ð 3 Turns, 0.310 ″ ID, #18 AWG Enamel, 0.2″ Long			Board Ð G10, 62 mils

L2 Ð 3±1/2 Turns, 0.310 ″ ID, #18 AWG Enamel, 0.25″	Long
Figure 1. 150 MHz Test Circuit

MRF134	MOTOROLA RF DEVICE DATA
2

	10
(WATTS)					f = 100 MHz
	8				150
					225
					400
POWER					400
	6

, OUTPUT	4
, OUTPUT
out	2				VDD = 28 V
P	2				VDD = 28 V
					IDQ = 50 mA
	0	200	400	600	800	1000
	0	200	400	600	800	1000

Pin, INPUT POWER (MILLWATTS)

Figure 2. Output Power versus Input Power

	5
(WATTS)	4				f = 100 MHz
					f = 100 MHz

POWER	3				150
	3				225
					225

, OUTPUT	2				400
	2

out	1				VDD = 13.5 V
P	1				VDD = 13.5 V
					IDQ = 50 mA
	0	200	400	600	800	1000
	0	200	400	600	800	1000

Pin, INPUT POWER (MILLWATTS)

Figure 3. Output Power versus Input Power

	8					Pin = 600 mW					8						Pin = 800 mW
						Pin = 600 mW		300 mW									Pin = 800 mW
(WATTS)								300 mW		(WATTS)
	6										6							400 mW

POWER								150 mW		POWER
POWER	4									POWER	4							200 mW
, OUTPUT	2							IDQ = 50 mA		, OUTPUT	2							IDQ = 50 mA
out	2							IDQ = 50 mA		out	2							IDQ = 50 mA
out								f = 100 MHz		out								f = 150 MHz
P										P

	0	14	16	18	20	22	24	26	28		0	14	16	18	20	22	24	26	28
	12	14	16	18	20	22	24	26	28		12	14	16	18	20	22	24	26	28
			VDD, SUPPLY VOLTAGE (VOLTS)										VDD, SUPPLY VOLTAGE (VOLTS)

Figure 4. Output Power versus Supply Voltage

Figure 5. Output Power versus Supply Voltage

Pout, OUTPUT POWER (WATTS)

Pin = 800 mW

400 mW

200 mW

IDQ = 50 mA

f = 225 MHz

12	14	16	18	20	22	24	26	28
		VDD, SUPPLY VOLTAGE (VOLTS)

Figure 6. Output Power versus Supply Voltage

Pout, OUTPUT POWER (WATTS)

Pin = 800 mW

6IDQ = 50 mA f = 400 MHz

400 mW

200 mW

0	14	16	18	20	22	24	26	28
12

VDD, SUPPLY VOLTAGE (VOLTS)

Figure 7. Output Power versus Supply Voltage

MOTOROLA RF DEVICE DATA	MRF134
	3

Pout, OUTPUT POWER (WATTS)

6								500
5	VDD = 28 V						(MILLAMPS)					VDS = 10 V
5	IDQ = 50 mA							400				VDS = 10 V
4	Pin = CONSTANT			f = 400 MHz
	Pin = CONSTANT			f = 400 MHz
								300
					150 MHz		CURRENT	300
3							CURRENT	200


2							,DRAIN
							,DRAIN	100	TYPICAL DEVICE SHOWN,
1				TYPICAL DEVICE SHOWN,			D	100	VGS(th) = 3.5 V
							D
							I
0				VGS(th) = 3.5 V
0	±1	0	1	2	3	4	5	0 0	1	2	3	4	5	6	7	8
± 2	±1	0	1	2	3	4	5	0 0	1	2	3	4	5	6	7	8
	VGS, GATE±SOURCE VOLTAGE (VOLTS)									VGS, GATE±SOURCE VOLTAGE (VOLTS)
	Figure 8. Output Power versus Gate Voltage								Figure 9. Drain Current versus Gate Voltage

(Transfer Characteristics)

VGS, GATE-SOURCE VOLTAGE (NORMALIZED)

1.02			VDD = 28 V					50
			VDD = 28 V				(dB)
1					IDQ = 200 mA		(dB)
1					IDQ = 200 mA		GAIN	40
							GAIN
							AVAILABLE
0.96						100 mA	AVAILABLE		(1 ± \|S11\|2) (1 ± \|S22\|2)
0.98						100 mA			\|S21\|2
								30	\|S21\|2
							MAXIMUM,		GMAX =
0.94						50 mA	MAXIMUM,	20
						50 mA		20

0.92							MAX	10	VDS = 28 V
0.92							MAX		VDS = 28 V
							G		ID = 100 mAdc
0.9	0	25	50	75	100	125	150	0	10	100	1000
± 25	0	25	50	75	100	125	150	1	10	100	1000
		TC, CASE TEMPERATURE (°C)							f, FREQUENCY (MHz)

Figure 10. Gate±Source Voltage versus	Figure 11. Maximum Available Gain
Case Temperature	versus Frequency

	28								1
	24						VGS = 0 V		0.7
	24						f = 1 MHz	(AMPS)	0.5
(pF)	20								0.3
	20
									0.2
C,CAPACITANCE								DRAINCURRENT	0.2
	16
									0.1
	12						Coss		0.07
							Coss		0.05
	8						C		0.05
	8						iss	,	0.03
								D
								I
	4						Crss		0.02
	4						Crss
	0	4	8	12	16	20	24	28	0.01
	0	4	8	12	16	20	24	28

VDS, DRAIN±SOURCE VOLTAGE (VOLTS)

				TC = 25°C
1	2	5	10	20	50	70	100
		VDS, DRAIN±SOURCE VOLTAGE (VOLTS)

Figure 12. Capacitance versus Voltage	Figure 13. Maximum Rated Forward Biased
	Safe Operating Area

MRF134	MOTOROLA RF DEVICE DATA
4

	R3*		R4			L2
	R3*		R4	C11				VDD = 28 V
				+	C12	C13		VDD = 28 V
		D1	C9	+			C14
		D1	C9	±			C14
			C10	±
		R2	L1
		R2
	C7		C8		Z4		Z5	C6
			R1					RF OUTPUT
C1	Z1	Z2	Z3
RF INPUT						C4		C5
				DUT		C4		C5
		C2		DUT
		C2	C3

*Bias Adjust

C1, C6 Ð 270 pF, ATC 100 mils

C2, C3, C4, C5 Ð 0±20 pF Johanson

C7, C9, C10, C14 Ð 0.1 mF Erie Redcap, 50 V C8 Ð 0.001 mF

C11 Ð 10 mF, 50 V

C12, C13 Ð 680 pF Feedthru

D1 Ð 1N5925A Motorola Zener

L1 Ð 6 Turns, 1/4 ″ ID, #20 AWG Enamel L2 Ð Ferroxcube VK±200 Ð 19/4B

R1 Ð 68 W, 1.0 W Thin Film

R2 Ð 10 k W, 1/4 W

R3 Ð 10 Turns, 10 k W Beckman Instruments 8108 R4 Ð 1.8 k W, 1/2 W

Z1 Ð 1.4 ″ x 0.166″ Microstrip

Z2 Ð 1.1 ″ x 0.166″ Microstrip

Z3 Ð 0.95 ″ x 0.166″ Microstrip

Z4 Ð 2.2 ″ x 0.166″ Microstrip

Z5 Ð 0.85 ″ x 0.166″ Microstrip Board Ð Glass Teflon, 62 mils

Figure 14. 400 MHz Test Circuit

	400
			VDD = 28 V, IDQ = 50 mA, Pout = 5.0 W
	225	Zo = 50 W	f	Zin{		ZOL*
	225	Zo = 50 W	MHz	Ohms		Ohms
	Zin{		MHz	Ohms		Ohms
	Zin{		100	21.2	± j25.4	20.1 ± j46.7
	150		100	21.2	± j25.4	20.1 ± j46.7
	150		150	14.6	± j22.1	19.2 ± j38.2
			150	14.6	± j22.1	19.2 ± j38.2
	400		225	9.1	± j18.8	17.5 ± j33.5
	f = 100 MHz		400	6.4	± j10.8	16.9 ± j26.9
225	f = 100 MHz
225			{68 W Shunt Resistor Gate±to±Ground
			{68 W Shunt Resistor Gate±to±Ground
150	ZOL*		ZOL* = Conjugate of the optimum load impedance
			ZOL* = into which the device output operates at a
f = 100 MHz			ZOL* = given output power, voltage and frequency.

Figure 15. Large±Signal Series Equivalent

Input/Output Impedances, Zin², ZOL*

MOTOROLA RF DEVICE DATA	MRF134
	5

Источник: https://studfile.net/preview/16503541/

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