Материал: mgy30n60drev0x

Скачать файл

Заказать новую работу

Внимание! Если размещение файла нарушает Ваши авторские права, то обязательно сообщите нам

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Order this document by MGY30N60D/D

Designer's Data Sheet

Insulated Gate Bipolar Transistor with Anti-Parallel Diode

N±Channel Enhancement±Mode Silicon Gate

This Insulated Gate Bipolar Transistor (IGBT) is co±packaged
with a soft recovery ultra±fast rectifier and uses an advanced
termination scheme to provide an enhanced and reliable high
voltage±blocking capability. Short circuit rated IGBT's are specifi-
cally suited for applications requiring a guaranteed short circuit
withstand time such as Motor Control Drives. Fast switching
characteristics result in efficient operations at high frequencies.
Co±packaged IGBT's save space, reduce assembly time and cost.
• Industry Standard High Power TO±264 Package (TO±3PBL)		C
• High Speed Eoff: 60 mJ per Amp typical at 125°C
• High Short Circuit Capability ± 10 ms minimum
• Soft Recovery Free Wheeling Diode is included in the package

• Robust High Voltage Termination	G


• Robust RBSOA
		E

MAXIMUM RATINGS (TC = 25°C unless otherwise noted)

MGY30N60D

Motorola Preferred Device

IGBT & DIODE IN TO±264

30 A @ 90°C

50 A @ 25°C

600 VOLTS

SHORT CIRCUIT RATED

CASE 340G±02, Style 5

TO±264

Rating	Symbol		Value	Unit

Collector±Emitter Voltage	VCES		600	Vdc
Collector±Gate Voltage (RGE = 1.0 MW)	VCGR		600	Vdc
Gate±Emitter Voltage Ð Continuous	VGE		±20	Vdc
Collector Current Ð Continuous @ T C = 25°C	IC25		50	Adc
Ð Continuous @ T C = 90°C	IC90		30
Ð Repetitive Pulsed Current (1)	ICM		100	Apk
Total Power Dissipation @ TC = 25°C	PD		202	Watts
Derate above 25°C			1.61	W/°C

Operating and Storage Junction Temperature Range	TJ, Tstg		± 55 to 150	°C
Short Circuit Withstand Time	tsc		10	ms
(VCC = 360 Vdc, VGE = 15 Vdc, TJ = 25°C, RG = 20 W)
Thermal Resistance Ð Junction to Case ± IGBT	RqJC		0.62	°C/W
Ð Junction to Case ± Diode	RqJC		1.41
Ð Junction to Ambient	RqJA		35
Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 5 seconds	TL		260	°C
Mounting Torque, 6±32 or M3 screw		10 lbfSin (1.13 NSm)

(1) Pulse width is limited by maximum junction temperature.

Designer's Data for ªWorst Caseº Conditions Ð The Designer' s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit curves Ð representing boundaries on device characteristics Ð are given to facilitate ªworst caseº design.

Preferred devices are Motorola recommended choices for future use and best overall value.

Motorola, Inc. 1995

MGY30N60D

ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)

Characteristic		Symbol	Min	Typ	Max	Unit

OFF CHARACTERISTICS

Collector±to±Emitter Breakdown Voltage		BVCES				Vdc
(VGE = 0 Vdc, IC = 250 μAdc)			600	Ð	Ð	mV/°C
Temperature Coefficient (Positive)			Ð	870	Ð	mV/°C

Zero Gate Voltage Collector Current		ICES	Ð	Ð	100	μAdc
(VCE = 600 Vdc, VGE = 0 Vdc)			Ð	Ð	100
(VCE = 600 Vdc, VGE = 0 Vdc, TJ = 125°C)			Ð	Ð	2500
Gate±Body Leakage Current (VGE = ± 20 Vdc, VCE = 0 Vdc)		IGES	Ð	Ð	250	nAdc
ON CHARACTERISTICS (1)

Collector±to±Emitter On±State Voltage		VCE(on)	Ð	2.20	2.90	Vdc
(VGE = 15 Vdc, IC = 15 Adc)			Ð	2.20	2.90
(VGE = 15 Vdc, IC = 15 Adc, TJ = 125°C)			Ð	2.10	Ð
(VGE = 15 Vdc, IC = 30 Adc)			Ð	2.60	3.45
Gate Threshold Voltage		VGE(th)	4.0	6.0	8.0	Vdc
(VCE = VGE, IC = 1 mAdc)			4.0	6.0	8.0	mV/°C
Threshold Temperature Coefficient (Negative)			Ð	10	Ð	mV/°C

Forward Transconductance (VCE = 10 Vdc, IC = 30 Adc)		gfe	Ð	15	Ð	Mhos
DYNAMIC CHARACTERISTICS

Input Capacitance	(VCE = 25 Vdc, VGE = 0 Vdc,	Cies	Ð	4280	Ð	pF
Output Capacitance	(VCE = 25 Vdc, VGE = 0 Vdc,	Coes	Ð	225	Ð
Output Capacitance	f = 1.0 MHz)	Coes	Ð	225	Ð
Transfer Capacitance		Cres	Ð	19	Ð
SWITCHING CHARACTERISTICS (1)

Turn±On Delay Time		td(on)	Ð	76	Ð	ns
Rise Time		tr	Ð	80	Ð
Turn±Off Delay Time	(VCC = 360 Vdc, IC = 30 Adc,	td(off)	Ð	348	Ð
	VGE = 15 Vdc, L = 300 mH
Fall Time	VGE = 15 Vdc, L = 300 mH	tf	Ð	188	Ð
Fall Time	RG = 20 Ω, TJ = 25°C)	tf	Ð	188	Ð
	RG = 20 Ω, TJ = 25°C)
Turn±Off Switching Loss	Energy losses include ªtailº	Eoff	Ð	0.98	1.28	mJ
Turn±On Switching Loss		Eon	Ð	2.00	Ð
Total Switching Loss		Ets	Ð	2.98	Ð
Turn±On Delay Time		td(on)	Ð	73	Ð	ns
Rise Time		tr	Ð	95	Ð
Turn±Off Delay Time	(VCC = 360 Vdc, IC = 30 Adc,	td(off)	Ð	394	Ð
	VGE = 15 Vdc, L = 300 mH
Fall Time	VGE = 15 Vdc, L = 300 mH	tf	Ð	418	Ð
Fall Time	RG = 20 Ω, TJ = 125°C)	tf	Ð	418	Ð
Turn±Off Switching Loss	Energy losses include ªtailº	Eoff	Ð	1.90	Ð	mJ
Turn±On Switching Loss		Eon	Ð	3.10	Ð
Total Switching Loss		Ets	Ð	5.00	Ð
Gate Charge	(VCC = 360 Vdc, IC = 30 Adc,	QT	Ð	150	Ð	nC
	(VCC = 360 Vdc, IC = 30 Adc,	Q1	Ð	30	Ð
	VGE = 15 Vdc)	Q1	Ð	30	Ð
		Q2	Ð	45	Ð
DIODE CHARACTERISTICS

Diode Forward Voltage Drop		VFEC	Ð	1.30	1.80	Vdc
(IEC = 15 Adc)			Ð	1.30	1.80
(IEC = 15 Adc, TJ = 125°C)			Ð	1.10	Ð
(IEC = 30 Adc)			Ð	1.45	2.05
(1) Pulse Test: Pulse Width ≤ 300 μs, Duty Cycle ≤ 2%.						(continued)

2	Motorola TMOS Power MOSFET Transistor Device Data

MGY30N60D

ELECTRICAL CHARACTERISTICS Ð continued (TJ = 25°C unless otherwise noted)

Characteristic		Symbol	Min	Typ	Max	Unit

DIODE CHARACTERISTICS Ð continued

Reverse Recovery Time		trr	Ð	153	Ð	ns
	(IF = 30 Adc, VR = 360 Vdc,	ta	Ð	82	Ð
	dIF/dt = 200 A/ms)	t	Ð	71	Ð
		b
Reverse Recovery Stored Charge		QRR	Ð	2.3	Ð	mC
Reverse Recovery Time		trr	Ð	208	Ð	ns
	(IF = 30 Adc, VR = 360 Vdc,	ta	Ð	117	Ð
	dIF/dt = 200 A/ms, TJ = 125°C)	t	Ð	91	Ð
		b
Reverse Recovery Stored Charge		QRR	Ð	3.8	Ð	mC
INTERNAL PACKAGE INDUCTANCE

Internal Emitter Inductance		LE				nH
(Measured from the emitter lead 0.25″ from package to emitter bond pad)			Ð	13	Ð

TYPICAL ELECTRICAL CHARACTERISTICS

	60	TJ = 25°C		VGE = 20 V		12.5 V
(AMPS)		TJ = 25°C		VGE = 20 V		12.5 V
				17.5 V		10 V

CURRENT	40			15 V
CURRENT
, COLLECTOR	20
, COLLECTOR
C
I
	0	1		2	3	4	5
	0	1		2	3	4	5
		VCE, COLLECTOR±TO±EMITTER VOLTAGE (VOLTS)
		Figure 1. Output Characteristics, TJ = 25°C
	60	VCE = 100 V
		VCE = 100 V
(AMPS)		5 ms PULSE WIDTH
(AMPS)					TJ = 125°C
CURRENT	40
CURRENT
, COLLECTOR					25°C
	20

C
I
	0	6	7	8	9	10	11
	5	6	7	8	9	10	11

VGE, GATE±TO±EMITTER VOLTAGE (VOLTS)

Figure 3. Transfer Characteristics

	60	TJ = 125°C		VGE = 20 V		12.5 V
(AMPS)		TJ = 125°C		VGE = 20 V		12.5 V
				17.5 V		10 V
						10 V
				15 V
CURRENT	40			15 V
	40

, COLLECTOR	20
, COLLECTOR
C
I
	0	1	2	3	4	5
	0	1	2	3	4	5
		VCE, COLLECTOR±TO±EMITTER VOLTAGE (VOLTS)
		Figure 2. Output Characteristics, TJ = 125°C
(VOLTS)	3
	VGE = 15 V
	80 ms PULSE WIDTH
VOLTAGE	80 ms PULSE WIDTH			IC = 30 A
				IC = 30 A
	2.6			22.5 A
, COLLECTOR±TO±EMITTER	2.6

				15 A
	2.2

CE	1.8
V	± 50		0	50	100	150
	± 50		0	50	100	150
			TJ, JUNCTION TEMPERATURE (°C)

Figure 4. Collector±to±Emitter Saturation

Voltage versus Junction Temperature

Motorola TMOS Power MOSFET Transistor Device Data

MGY30N60D
	8000	VCE = 0 V			TJ = 25°C
		VCE = 0 V			TJ = 25°C
(pF)	6000
(pF)
C, CAPACITANCE			Cies
	4000
	2000
	2000
			Coes
	0	Cres
	0	5	10	15	20	25
	0	5	10	15	20	25
	GATE±TO±EMITTER OR COLLECTOR±TO±EMITTER VOLTAGE (VOLTS)

Figure 5. Capacitance Variation

(VOLTS)	20
(VOLTS)				QT
VOLTAGE	15
VOLTAGE
, GATE±TO±EMITTER	10	Q1	Q2
	5					TJ = 25°C
						IC = 30 A
GE
V	0
	0	30	60	90	120	150
	0	30	60	90	120	150

Qg, TOTAL GATE CHARGE (nC)

Figure 6. Gate±to±Emitter Voltage versus Total Charge

(mJ)	6.4	VCC = 360 V
		VCC = 360 V
	5.6	VGE = 15 V
LOSSES	5.6	VGE = 15 V
	4.8	TJ = 125°C		IC = 30 A
	4.8

ENERGY	4
ENERGY	3.2			20 A
SWITCHING	3.2
	2.4
	1.6			10 A
TOTAL	0.8
TOTAL
	0	20	30	40	50
	10	20	30	40	50

RG, GATE RESISTANCE (OHMS)

Figure 7. Total Switching Losses versus

Gate Resistance

(mJ)	6.5
(mJ)		VCC = 360 V
LOSSES	5.5	VGE = 15 V
		RG = 20 Ω
	4.5
ENERGY	4.5			IC = 30 A
				IC = 30 A
	3.5
SWITCHING	3.5
				20 A
	2.5
				10 A
TOTAL	1.5			10 A
	1.5

	0.5	25	50	75	100	125	150
	0	25	50	75	100	125	150
		TJ, JUNCTION TEMPERATURE (°C)

Figure 8. Total Switching Losses versus

Junction Temperature

(mJ)	5
(mJ)		VCC = 360 V
LOSSES	4	VGE = 15 V
	4	RG = 20 Ω
		RG = 20 Ω
		TJ = 125°C
ENERGY		TJ = 125°C
	3

SWITCHING	2
SWITCHING	1
TOTAL	1
TOTAL
	0	5	10	15	20	25	30
	0	5	10	15	20	25	30
		IC, COLLECTOR±TO±EMITTER CURRENT (AMPS)

Figure 9. Total Switching Losses versus

Collector±to±Emitter Current

	3
(mJ)	VCC = 360 V
(mJ)	VGE = 15 V
LOSSES	TJ = 125°C		IC = 30 A
	2

ENERGY			20 A
ENERGY
TURN±OFF	1		10 A
			10 A

	0	20	30	40	50
	10	20	30	40	50
		RG, GATE RESISTANCE (OHMS)

Figure 10. Turn±Off Losses versus

Gate Resistance

4	Motorola TMOS Power MOSFET Transistor Device Data

	3
(mJ)		VCC = 360 V
(mJ)		VGE = 15 V
LOSSES		RG = 20 Ω
	2

ENERGY				IC = 30 A
ENERGY
TURN±OFF	1			20 A
				20 A
				10 A
				10 A
	0	25	50	75	100	125	150
	0	25	50	75	100	125	150
		TJ, JUNCTION TEMPERATURE (°C)

Figure 11. Turn±Off Losses versus

Junction Temperature

(AMPS)CURRENT	100
	100
FORWARD	10
FORWARD			TJ = 125°C	TJ = 25°C
			TJ = 125°C
INSTANTANEOUS,
INSTANTANEOUS,	1
	1
i	0.1
F	0	0.4	0.8	1.2	1.6
	0	0.4	0.8	1.2	1.6

VFM, FORWARD VOLTAGE DROP (VOLTS)

Figure 13. Typical Diode Forward Drop versus Instantaneous Forward Current

						MGY30N60D
	2
(mJ)		VCC = 360 V
(mJ)		VGE = 15 V
LOSSES	1.5	RG = 20 Ω
LOSSES		TJ = 125°C
ENERGY	1
ENERGY
TURN±OFF	0.5
TURN±OFF
	0	5	10	15	20	25	30
	0	5	10	15	20	25	30
		IC, COLLECTOR±TO±EMITTER CURRENT (AMPS)

Figure 12. Turn±Off Losses versus

Collector±to±Emitter Current

CURRENT (A)	100
	10




COLLECTOR±TO±EMITTER,


	1






		T	J =	125	°C




		V	GE	= 15 V
C		RGE		= 20 Ω


I	0.1

		10				100	1000
	1	10				100	1000

VCE, COLLECTOR±TO±EMITTER VOLTAGE (VOLTS)

Figure 14. Reverse Biased Safe

Operating Area

Motorola TMOS Power MOSFET Transistor Device Data

Источник: https://studfile.net/preview/16503636/

Смотрите также:


ЦЕНОВАЯ ПОЛИТИКА ПРЕДПРИЯТИЯ НА ПРИМЕРЕ ООО «ДНС РИТЕЙЛ»
_archivetempпротивовоспалительные
- Обратный порядок следования фаз 4
- Сопротивление изоляции 25
!_Лабораторные_работы_1_сем_ОУТС
!Контрольная работа (задание)
!Фармакология препаратов для терапии заболеваний дыхательных путей
'Electronics Workbench' – алгоритм инструмента моделирования электронных схем
'Новая экономика': российская специфика