Материал: MJ13333R
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MJ13333/D
MJ13333
Designer's Data Sheet
SWITCHMODE Series
NPN Silicon Power Transistor
The MJ13333 transistor is designed for high voltage, high±speed, power switching in inductive circuits where fall time is critical. It is particularly suited for line operated switchmode applications such as:
• Switching Regulators
• Inverters
•Solenoid and Relay Drivers
•Motor Controls
•Deflection Circuits
Fast Turn Off Times
200 ns Inductive Fall Time Ð 25 _C (Typ) 1.8 μs Inductive Storage Time Ð 25 _C (Typ)
Operating Temperature Range ±65 to +200_C
100_C Performance Specified for:
Reversed Biased SOA with Inductive Loads
Switching Times with Inductive Loads
Saturation Voltages
Leakage Currents
MAXIMUM RATINGS
20 AMPERE
NPN SILICON
POWER TRANSISTORS
400±500 VOLTS
175 WATTS
CASE 1±07 TO±204AA (TO±3)
Rating |
Symbol |
Value |
Unit |
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Collector±Emitter Voltage |
VCEO |
400 |
Vdc |
Collector±Emitter voltage |
VCEV |
700 |
Vdc |
Emitter Base Voltage |
VEB |
6.0 |
Vdc |
Collector Current Ð Continuous |
IC |
20 |
Adc |
Peak (1) |
ICM |
30 |
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Base Current Ð Continuous |
IB |
10 |
Adc |
Peak (1) |
IBM |
15 |
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Total Power Dissipation @ TC = 25_C |
PD |
175 |
Watts |
@ TC = 100_C |
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100 |
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Derate above 25_C |
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1.0 |
W/_C |
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Operating and Storage Junction Temperature Range |
TJ, Tstg |
± 65 to +200 |
_C |
THERMAL CHARACTERISTICS
Characteristic |
Symbol |
Max |
Unit |
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Thermal Resistance, Junction to Case |
RqJC |
1.0 |
_C/W |
Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 5 Seconds |
TL |
275 |
_C |
(1) Pulse Test: Pulse Width = 5 ms, Duty Cycle v10%.
(1) Similar device types available with lower VCEO ratings, see the MJ13330 (200 V) and MJ13331 (250 V).
Designer's and SWITCHMODE are trademarks of Motorola, Inc.
Designer's Data for ªWorst Caseº Conditions Ð The Designer 's Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit curves Ð representing boundaries on device characteristics Ð are given to facilitate ªworst caseº design.
REV 1
Motorola, Inc. 1995
MJ13333
ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
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Characteristic |
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Typ |
Max |
Unit |
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OFF CHARACTERISTICS |
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Collector±Emitter Sustaining Voltage (Table 1) |
VCEO(sus) |
400 |
Ð |
Ð |
Vdc |
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(IC = 100 mA, IB = 0) |
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Collector Cutoff Current |
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ICEV |
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mAdc |
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(VCEV = Rated Value, VBE(off) = 1.5 Vdc) |
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Ð |
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0.25 |
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(VCEV = Rated Value, VBE(off) = 1.5 Vdc, TC = 150_C) |
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Ð |
Ð |
5.0 |
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Collector Cutoff Current |
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ICER |
Ð |
Ð |
5.0 |
mAdc |
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(VCE = Rated VCEV, RBE = 50 Ω, TC = 100_C) |
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Emitter Cutoff Current |
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IEBO |
Ð |
Ð |
1.0 |
mAdc |
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(VEB = 6.0 Vdc, IC = 0) |
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SECOND BREAKDOWN |
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Second Breakdown Collector Current with base forward biased |
IS/b |
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See Figure 12 |
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Clamped Inductive SOA with Base Reverse Biased |
RBSOA |
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See Figure 13 |
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ON CHARACTERISTICS (1) |
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DC Current Gain |
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hFE |
10 |
Ð |
60 |
Ð |
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(IC = 5.0 Adc, VCE = 5.0 Vdc) |
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Collector±Emitter Saturation Voltage |
VCE(sat) |
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Vdc |
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(IC = 10 Adc, IB = 2.0 Adc) |
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Ð |
Ð |
1.8 |
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(IC = 20 Adc, IB = 6.7 Adc) |
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Ð |
Ð |
5.0 |
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(IC = 10 Adc, IB = 2.0 Adc, TC = 100_C) |
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Ð |
Ð |
2.4 |
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Base Emitter Saturation Voltage |
VBE(sat) |
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Vdc |
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(IC = 10 Adc, IB = 2.0 Adc) |
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Ð |
Ð |
1.8 |
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(IC = 10 Adc, IB = 2.0 Adc, TC = 100_C) |
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Ð |
Ð |
1.8 |
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DYNAMIC CHARACTERISTICS |
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Output Capacitance |
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Cob |
125 |
Ð |
500 |
pF |
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(VCB = 10 Vdc, IE = 0, ftest = 1.0 kHz) |
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SWITCHING CHARACTERISTICS |
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Resistive Load (Table 1) |
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Delay Time |
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td |
Ð |
0.02 |
0.1 |
μs |
Rise Time |
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(VCC = 250 Vdc, IC = 10 A, |
t |
Ð |
0.3 |
0.7 |
μs |
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IB1 = 2.0 A, VBE(off) = 5.0 Vdc, tp = 10 μs, |
r |
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Storage Time |
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ts |
Ð |
1.6 |
4.0 |
μs |
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Duty Cycle v 2.0%) |
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Fall Time |
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tf |
Ð |
0.3 |
0.7 |
μs |
Inductive Load, Clamped (Table 1) |
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Storage Time |
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(IC = 10 A(pk), Vclamp = 250 Vdc, IB1 = 2.0 A, |
tsv |
Ð |
2.5 |
5.0 |
μs |
Crossover Time |
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VBE(off) = 5 Vdc, TC = 100°C) |
tc |
Ð |
0.8 |
2.0 |
μs |
Storage Time |
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(IC = 10 A(pk), Vclamp = 250 Vdc, IB1 = 2.0 A, |
tsv |
Ð |
1.8 |
Ð |
μs |
Crossover Time |
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tc |
Ð |
0.4 |
Ð |
μs |
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VBE(off) = 5 Vdc, TC = 25_C) |
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Fall Time |
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tfi |
Ð |
0.2 |
Ð |
μs |
(1) Pulse Test: PW = 300 μs, Duty Cycle v 2%.
2 |
Motorola Bipolar Power Transistor Device Data |
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MJ13333 |
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100 |
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(VOLTS) |
2.0 |
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150°C |
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50 |
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VOLTAGE |
1.6 |
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CURRENT GAIN |
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1.2 |
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1 A |
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5 A |
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10 A |
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20 |
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25°C |
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0.8 |
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, DC |
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COLLECTOR±EMITTER |
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VCE = 5 V |
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FE |
10 |
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h |
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0.4 |
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, |
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5.0 |
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CE |
0 |
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0.5 |
1.0 |
2.0 |
5.0 |
10 |
V |
0.02 |
0.05 |
0.1 |
0.2 |
0.5 |
1.0 |
2.0 |
5.0 |
10 |
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0.2 |
20 |
0.01 |
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IC, COLLECTOR CURRENT (AMPS) |
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IB, BASE CURRENT (AMP) |
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Figure 1. DC Current Gain |
Figure 2. Collector Saturation Region |
(VOLTS) |
2.0 |
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IC/IB = 5 |
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VOLTAGE |
1.6 |
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1.2 |
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COLLECTOR±EMITTER |
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0.8 |
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0.4 |
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25°C |
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, |
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CE |
0 |
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150°C |
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V |
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20 |
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0.2 |
0.5 |
1.0 |
2.0 |
5.0 |
10 |
IC, COLLECTOR CURRENT (AMP)
Figure 3. Collector±Emitter Saturation Region
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104 |
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μA) |
103 |
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( |
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CURRENT |
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TJ = 150°C |
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102 |
125°C |
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,COLLECTOR |
101 |
100°C |
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75°C |
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0 |
REVERSE |
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FORWARD |
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C |
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I |
10 |
25°C |
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VCE = 250 V |
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10±1 |
± 0.2 |
0 |
+ 0.2 |
+ 0.4 |
+ 0.6 |
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± 0.4 |
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VBE, BASE±EMITTER VOLTAGE (VOLTS) |
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Figure 5. Collector Cutoff Region
(VOLTS) |
2.0 |
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VOLTAGE |
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IC/IB = 5 |
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1.6 |
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SATURATION |
1.2 |
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25°C |
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, BASE±EMITTER |
0.8 |
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0.4 |
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150°C |
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BE(sat) |
0 |
0.5 |
1.0 |
2.0 |
5.0 |
10 |
20 |
0.2 |
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V |
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IC, COLLECTOR CURRENT (AMP) |
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Figure 4. Base±Emitter Voltage
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3000 |
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2000 |
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Cib |
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(pF) |
1000 |
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700 |
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C, CAPACITANCE |
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500 |
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200 |
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Cob |
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100 |
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50 |
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30 |
0.5 |
1.0 |
5.0 |
10 |
50 |
100 |
500 |
1000 |
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0.1 |
VR, REVERSE VOLTAGE (VOLTS)
Figure 6. Capacitance
Motorola Bipolar Power Transistor Device Data |
3 |
MJ13333 |
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IC pk |
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Vclamp |
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90% Vclamp |
90% IC |
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IC |
tsv |
trv |
tfi |
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tti |
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tc |
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VCE |
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10% Vclamp |
10% |
2% IC |
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I |
90% I |
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I pk |
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B |
B1 |
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C |
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TIME |
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Figure 7. Inductive Switching Measurements
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10 |
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I |
C = 10 |
A |
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(AMP) |
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I |
B1 = 2 |
A |
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Vclamp |
= 250 |
V |
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CURRENTBASE, |
7.0 |
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TJ = 25 |
°C |
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5.0 |
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B2(pk) |
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2.0 |
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0 |
2.0 |
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5.0 |
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10 |
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VBE(off), REVERSE BASE VOLTAGE (VOLTS) |
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Figure 8. Reverse Base Current versus VBE(off) With No External Base Resistance
SWITCHING TIMES NOTE
In resistive switching circuits, rise, fall, and storage times have been defined and apply to both current and voltage waveforms since they are in phase. However, for inductive loads which are common to SWITCHMODE power supplies and hammer drivers, current and voltage waveforms are not in phase. Therefore, separate measurements must be made on each waveform to determine the total switching time. For this reason, the following new terms have been defined.
tsv = Voltage Storage Time, 90% IB1 to 10% Vclamp trv = Voltage Rise Time, 10 ± 90% Vclamp
tfi = Current Fall Time, 90 ± 10% IC tti = Current Tail, 10 ± 2% IC
tc = Crossover Time, 10% Vclamp to 10% IC
An enlarged portion of the inductive switching waveforms is shown in Figure 7 to aid in the visual identity of these terms.
For the designer, there is minimal switching loss during storage time and the predominant switching power losses occur during the crossover interval and can be obtained using the standard equation from AN±222:
PSWT = 1/2 VCCIC(tc)f
In general, trv + tfi ] tc. However, at lower test currents this relationship may not be valid.
As is common with most switching transistors, resistive switching is specified at 25°C and has become a benchmark for designers, However, for designers of high frequency converter circuits, the user oriented specifications which make this a ªSWITCHMODEº transistor are the inductive switching speeds (tc and tsv) which are guaranteed at 100°C.
RESISTIVE SWITCHING PERFORMANCE
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2.0 |
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1.0 |
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VCC = 250 V |
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0.5 |
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IC/IB = 5 |
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tr |
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μs) |
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( |
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t, TIME |
0.2 |
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0.1 |
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0.05 |
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td |
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0.02 |
0.5 |
1.0 |
2.0 |
5.0 |
10 |
20 |
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0.2 |
IC, COLLECTOR CURRENT (AMP)
Figure 9. Turn±On Switching Times
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5.0 |
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2.0 |
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ts |
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μs) |
1.0 |
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( |
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TIME |
0.5 |
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tf |
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t, |
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VCE = 250 V |
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0.2 |
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IC/IB = 5 |
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0.1 |
VBE(off) = 5 V |
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0.05 |
0.2 |
0.5 |
1.0 |
2.0 |
5.0 |
10 |
20 |
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IC, COLLECTOR CURRENT (AMP)
Figure 10. Turn±Off Switching Times
4 |
Motorola Bipolar Power Transistor Device Data |
MJ13333
Table 1. Test Conditions for Dynamic Performance
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VCEO(sus) |
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RBSOA AND INDUCTIVE SWITCHING |
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RESISTIVE SWITCHING |
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+15 V |
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250 μF |
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470 Ω |
47 Ω |
R1 |
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2 W |
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15 V |
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TURN±ON TIME |
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+10 V |
0 |
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330 Ω |
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1 |
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INPUT CONDITIONS |
20 |
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2 |
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0 |
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1 |
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IB1 |
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5.1 Ω |
R2 |
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2 |
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2 |
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5 W |
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IB1 adjusted to |
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obtain the forced |
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50 Ω |
100 Ω |
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hFE desired |
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PW Varied to Attain |
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TURN±OFF TIME |
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IC = 100 mA |
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39 Ω |
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Use inductive switching |
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430 Ω |
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driver as the input to |
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All Diodes Ð 1N4934 |
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± 5.2 |
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the resistive test circuit. |
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All NPN Ð MJE200 |
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250 μF |
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All PNP Ð MJE210 |
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Adjust R1 to obtain IB1 |
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For switching and RBSOA, R2 = 0 |
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For VCEO(sus), R2 = ∞ |
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CIRCUIT VALUES |
Lcoil = 80 mH, VCC = 10 V |
Lcoil |
= 180 μH |
Vclamp |
= 250 V |
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VCC = 250 V |
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Rcoil |
= 0.05 Ω |
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RL = 50 Ω |
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Rcoil = 0.7 Ω |
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RB adjusted to attain desired IB1 |
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VCC |
= 20 V |
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Pulse Width = 10 μs |
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INDUCTIVE TEST CIRCUIT |
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OUTPUT WAVEFORMS |
t1 Adjusted to |
RESISTIVE TEST CIRCUIT |
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CIRCUITS |
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IC |
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Obtain IC |
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1 TUT |
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Rcoil |
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IC(pk) |
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t Clamped |
t |
≈ |
Lcoil (ICpk) |
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TUT |
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1N4937 |
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f |
1 |
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VCC |
1 |
RL |
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t |
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INPUT |
OR |
Lcoil |
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t1 |
tf |
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L |
coil |
(I |
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2 |
VCC |
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TEST |
SEE ABOVE FOR |
EQUIVALENT |
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t2 |
≈ |
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Cpk |
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Vclamp |
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VCE |
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VClamp |
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DETAILED CONDITIONS |
VCC |
VCE or |
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2 |
RS = |
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Test Equipment |
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Vclamp |
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Scope Ð Tektronix |
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0.1 Ω |
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t |
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TIME |
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475 or Equivalent |
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t2 |
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1 |
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EFFECTIVE TRANSIENT THERMAL |
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0.7 |
D = 0.5 |
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0.5 |
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RESISTANCE (NORMALIZED) |
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0.3 |
0.2 |
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0.2 |
0.1 |
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P(pk) |
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0.1 |
0.05 |
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RθJC(t) = r(t) RθJC |
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0.07 |
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RθJC = 1.0°C/W MAX |
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0.02 |
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0.05 |
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D CURVES APPLY FOR POWER |
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PULSE TRAIN SHOWN |
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t1 |
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0.01 |
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0.03 |
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READ TIME AT t1 |
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t2 |
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0.02 |
SINGLE PULSE |
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TJ(pk) ± TC = P(pk) RθJC(t) |
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r(t), |
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DUTY CYCLE, D = t1/t2 |
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0.01 |
0.02 0.03 |
0.05 |
0.1 |
0.2 |
0.3 |
0.5 |
1 |
2 |
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5 |
10 |
20 |
30 |
50 |
100 |
200 |
300 |
500 |
1000 |
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0.01 |
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t, TIME (ms)
Figure 11. Thermal Response
Motorola Bipolar Power Transistor Device Data |
5 |