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MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Order this document by BDX33B/D

Darlington Complementary

Silicon Power Transistors

. . . designed for general purpose and low speed switching applications.

•High DC Current Gain Ð h FE = 2500 (typ.) at IC = 4.0

•Collector±Emitter Sustaining Voltage at 100 mAdc

VCEO(sus) = 80 Vdc (min.) Ð BDX33B, 34B

VCEO(sus) = 100 Vdc (min.) Ð BDX33C, 34C

• Low Collector±Emitter Saturation Voltage

VCE(sat) = 2.5 Vdc (max.) at IC = 3.0 Adc Ð BDX33B, 33C/34B, 34C

•Monolithic Construction with Build±In Base±Emitter Shunt resistors

•TO±220AB Compact Package

MAXIMUM RATINGS

		BDX33B		BDX33C
Rating	Symbol	BDX34B		BDX34C	Unit

Collector±Emitter Voltage	VCEO	80		100	Vdc
Collector±Base Voltage	VCB	80		100	Vdc
Emitter±Base Voltage	VEB		5.0		Vdc
Collector Current Ð Continuous	IC		10		Adc
Peak			15

Base Current	IB	0.25			Adc
Total Device Dissipation	PD		70		Watts
@ TC = 25_C			70		Watts
Derate above 25_C		0.56			W/_C

Operating and Storage Junction	TJ, Tstg	± 65 to +150			_C
Temperature Range

THERMAL CHARACTERISTICS

Characteristic	Symbol	Max	Unit

Thermal Resistance, Junction to Case	RθJC	1.78	_C/W

NPN

BDX33B

BDX33C*

PNP

BDX34B BDX34C*

*Motorola Preferred Device

DARLINGTON

10 AMPERE

COMPLEMENTARY

SILICON

POWER TRANSISTORS

80 ± 100 VOLTS

70 WATTS

CASE 221A±06

TO±220AB

	80
(WATTS)	60
(WATTS)
POWER DISSIPATION	40
POWER DISSIPATION	20
,
D
P
	0	20	40	60	80	100	120	140	160
	0	20	40	60	80	100	120	140	160
				TC, CASE TEMPERATURE (°C)

Figure 1. Power Derating

Preferred devices are Motorola recommended choices for future use and best overall value.

REV 7

Motorola, Inc. 1995

BDX33B BDX33C BDX34B		BDX34C
	ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)

	Characteristic		Symbol	Min	Max	Unit

	OFF CHARACTERISTICS

	Collector±Emitter Sustaining Voltage1		V			Vdc
	(IC = 100 mAdc, IB = 0)	BDX33B/BDX34B	CEO(sus)	80	Ð
	(IC = 100 mAdc, IB = 0)	BDX33B/BDX34B		80	Ð
		BDX33C/BDX34C		100	Ð

	Collector±Emitter Sustaining Voltage1		VCER(sus)	80	Ð	Vdc
	(IC = 100 mAdc, IB = 0, RBE = 100)	BDX33B/BDX34B		80	Ð
		BDX33C/BDX33C		100	Ð

	Collector±Emitter Sustaining Voltage1		VCEX(sus)	80	Ð	Vdc
	(IC = 100 mAdc, IB = 0, VBE = 1.5 Vdc)	BDX33B/BDX34B		80	Ð
		BDX33C/BDX34C		100	Ð

	Collector Cutoff Current		ICEO	Ð	0.5	mAdc
	(VCE = 1/2 rated VCEO, IB = 0)	TC = 25_C		Ð	0.5
		TC = 100_C		Ð	10
	Collector Cutoff Current		ICBO	Ð	1.0	mAdc
	(VCB = rated VCBO, IE = 0)	TC = 25_C		Ð	1.0
		TC = 100_C		Ð	5.0
	Emitter Cutoff Current		IEBO	Ð	10	mAdc
	(VBE = 5.0 Vdc, IC = 0)
	ON CHARACTERISTICS

	DC Current Gain1		h	750	Ð	Ð
	(IC = 3.0 Adc, VCE = 3.0 Vdc)	BDX33B, 33C/34B, 34C	FE
	(IC = 3.0 Adc, VCE = 3.0 Vdc)	BDX33B, 33C/34B, 34C
	Collector±Emitter Saturation Voltage		VCE(sat)	Ð	2.5	Vdc
	(IC = 3.0 Adc, IB = 6.0 mAdc)	BDX33B, 33C/34B, 34C
	Base±Emitter On Voltage		VBE(on)	Ð	2.5	Vdc
	(IC = 3.0 Adc, VCE = 3.0 Vdc)	BDX33B, 33C/34B, 34C
	Diode Forward Voltage		VF	Ð	4.0	Vdc
	(IC = 8.0 Adc)

1Pulse Test: Pulse Width v 300 μs, Duty Cycle v 2.0%.

2Pulse Test non repetitive: Pulse Width = 0.25 s.

2	Motorola Bipolar Power Transistor Device Data

													BDX33B			BDX33C			BDX34B			BDX34C
	THERMAL RESISTANCE (NORMALIZED)	1.0
		0.7	D = 0.5
		0.5	D = 0.5
r(t) EFFECTIVE TRANSIENT		0.5
		0.3	0.2
		0.2	0.2
		0.2	0.1
			0.1									P(pk)
		0.1	0.05									P(pk)					RθJC(t) = r(t) RθJC
		0.07	0.02														RθJC = 1.92°C/W
		0.05											t1		SINGLE		D CURVES APPLY FOR POWER
		0.03											t1		SINGLE		PULSE TRAIN SHOWN
		0.03	0.01	SINGLE PULSE									t2		PULSE		READ TIME AT t1
		0.02	0.01										DUTY CYCLE, D = t /t				TJ(pk) ± TC = P(pk) RθJC(t)
															1 2
		0.01
		0.01	0.02 0.03	0.05	0.1	0.2	0.3	0.5	1.0	2.0	3.0	5.0	10	20	30		50	100	200	300	500	1000
									t, TIME OR PULSE WIDTH (ms)

Figure 1. Thermal Response

	20									100
	10							500 μs		μs
(AMP)	5.0			5.0 ms
	5.0			1.0 ms
		TC = 25°C		1.0 ms
						dc
CURRENT	2.0					dc
	2.0
	1.0		BONDING WIRE LIMITED
	0.5		BONDING WIRE LIMITED
COLLECTOR	0.5		THERMALLY LIMITED @ TC = 25°C
			THERMALLY LIMITED @ TC = 25°C
	0.2		(SINGLE PULSE)
	0.2		SECOND BREAKDOWN LIMITED
	0.1		SECOND BREAKDOWN LIMITED
	0.1	CURVES APPLY BELOW RATED VCEO
,	0.05
C							BDX34B
I

	0.02						BDX34C
	0.02	2.0 3.0	5.0	7.0	10	20	30	50	70	100
	1.0	2.0 3.0	5.0	7.0	10	20	30	50	70	100
		VCE, COLLECTOR±EMITTER VOLTAGE (VOLTS)

	20									100
(AMP)	10							500 μs		μs
	5.0			5.0 ms
	5.0	TC = 25°C		1.0 ms
CURRENT	2.0	TC = 25°C				dc
	2.0
	1.0		BONDING WIRE LIMITED

COLLECTOR
	0.5		THERMALLY LIMITED @ TC = 25°C
	0.2		(SINGLE PULSE)
	0.2		SECOND BREAKDOWN LIMITED
	0.1	CURVES APPLY BELOW RATED V				CEO
,						CEO
C	0.05
I							BDX33B


	0.02						BDX33C
	0.02	2.0 3.0	5.0	7.0	10	20	30	50	70	100
	1.0	2.0 3.0	5.0	7.0	10	20	30	50	70	100
		VCE, COLLECTOR±EMITTER VOLTAGE (VOLTS)

Figure 2. Active±Region Safe Operating Area

There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC ± VCE limits of the transistor that must be observed for reliable operation, i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Fig. 3 is based on

TJ(pk) = 150_C; TC is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10%

provided TJ(pk) = 150_C. TJ(pk) may be calculated from the data in Fig. . At high case temperatures, thermal limitations

will reduce the power that can be handled to values less than the limitations imposed by second breakdown.

10,000
GAIN	5000
GAIN	3000
CURRENT	3000
	2000
	1000
	500		TJ = 25°C
,SMALL±SIGNAL	500		TJ = 25°C
	300		VCE = 4.0 Vdc
	200		IC = 3.0 Adc
			IC = 3.0 Adc
	100
	50		PNP
FE	30		PNP
h	20		NPN
	20		NPN
	10	2.0	5.0	10	20	50	100	200	500	1000
	1.0	2.0	5.0	10	20	50	100	200	500	1000

f, FREQUENCY (kHz)

Figure 3. Small±Signal Current Gain

	300
									TJ = 25°C
	200
(pF)
CAPACITANCE	100						Cob
CAPACITANCE	70				Cib
C,
	50		PNP
			PNP
			NPN
	30	0.2	0.5	1.0	2.0	5.0	10	20	50	100
	0.1	0.2	0.5	1.0	2.0	5.0	10	20	50	100

VR, REVERSE VOLTAGE (VOLTS)

Figure 4. Capacitance

Motorola Bipolar Power Transistor Device Data

BDX33B BDX33C BDX34B BDX34C

NPN		PNP
BDX33B,	33C	BDX34B,	34C

20,000

10,000

GAIN	5000
CURRENTDC,	1000
	3000
	2000
FE
h	500
	500

300

200

VCE = 4.0 V

TJ = 150°C

25°C

± 55°C

0.1	0.2	0.3	0.5	0.7	1.0	2.0	3.0	5.0	7.0	10
		IC, COLLECTOR CURRENT (AMP)

20,000

10,000

GAIN	5000
CURRENTDC,	1000
	3000
	2000
FE
h	500
	500

300

200

VCE = 4.0 V

TJ = 150°C

25°C

± 55°C

0.1	0.2	0.3	0.5	0.7	1.0	2.0	3.0	5.0	7.0	10
		IC, COLLECTOR CURRENT (AMP)

Figure 5. DC Current Gain

VCE, COLLECTOR±EMITTER VOLTAGE (VOLTS)

V, VOLTAGE (VOLTS)

3.0																					(VOLTS)	3.0
3.0																TJ	= 25		°C		VOLTAGE	3.0																						TJ	= 25		°C
2.6																TJ	= 25		°C			2.6																						TJ	= 25		°C

		IC =	2.0		A			4.0 A				6.0 A															I	C	=		2.0		A		4.0 A					6.0		A
																											I
2.2																					COLLECTOR±EMITTER,	2.2


1.8																						1.8


1.4																					CE	1.4




1.0																					V	1.0
	0.5		0.7				1.0			2.0	3.0	5.0	7.0		10			20		30	V				0.5		0.7			1.0					2.0			3.0	5.0		7.0		10			20		30

0.3																						0.3
								IB, BASE CURRENT (mA)																										IB, BASE CURRENT (mA)
														Figure 6. Collector Saturation Region
3.0																						3.0
3.0			TJ =			25°C																3.0		TJ		= 25°C
2.5			TJ =			25°C															(VOLTS)	2.5		TJ		= 25°C


2.0																						2.0

																					VOLTAGE


1.5	V	BE(sat) @				IC/IB =			250													1.5			V	BE @ VCE						= 4.0 V
1.5																					V,	1.5				BE @ VCE						= 4.0 V

1.0	VBE @ VCE					= 4.0 V																1.0		VBE(sat) @ I								C/IB = 250
1.0	VCE(sat) @ I					C/IB =			250													1.0
	VCE(sat) @ I					C/IB =			250
0.5																						0.5					VCE(sat) @ IC/IB									=	250
0.5	0.2			0.3				0.5		0.7	1.0	2.0		3.0		5.0		7.0		10		0.5	0.1				0.2			0.3				0.5	0.7			1.0			2.0		3.0	5.0		7.0		10
0.1	0.2			0.3				0.5		0.7	1.0	2.0		3.0		5.0		7.0		10			0.1				0.2			0.3				0.5	0.7			1.0			2.0		3.0	5.0		7.0		10
							IC, COLLECTOR CURRENT (AMP)																									IC, COLLECTOR CURRENT (AMP)

Figure 7. ªOnº Voltages

4	Motorola Bipolar Power Transistor Device Data

BDX33B BDX33C BDX34B BDX34C

PACKAGE DIMENSIONS

				±T±
	B		F	C
			T	S
4
Q			A
1	2	3	U
H
Z			K
Z
L				R
V				J
G
			D
	N

SEATING PLANE

NOTES:

1.DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.

2.CONTROLLING DIMENSION: INCH.

3.DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED.

	INCHES		MILLIMETERS
DIM	MIN	MAX	MIN	MAX
A	0.570	0.620	14.48	15.75
B	0.380	0.405	9.66	10.28
C	0.160	0.190	4.07	4.82
D	0.025	0.035	0.64	0.88
F	0.142	0.147	3.61	3.73
G	0.095	0.105	2.42	2.66
H	0.110	0.155	2.80	3.93
J	0.018	0.025	0.46	0.64
K	0.500	0.562	12.70	14.27
L	0.045	0.060	1.15	1.52
N	0.190	0.210	4.83	5.33
Q	0.100	0.120	2.54	3.04
R	0.080	0.110	2.04	2.79
S	0.045	0.055	1.15	1.39
T	0.235	0.255	5.97	6.47
U	0.000	0.050	0.00	1.27
V	0.045	±±±	1.15	±±±
Z	±±±	0.080	±±±	2.04

STYLE 1:

PIN 1. BASE

2. COLLECTOR

3. EMITTER

4. COLLECTOR

CASE 221A±06

TO±220AB

ISSUE Y

Motorola Bipolar Power Transistor Device Data

Источник: https://studfile.net/preview/16503858/

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