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Philips Semiconductors	Product speciﬁcation

N-channel silicon ﬁeld-effect transistors	BF245A; BF245B; BF245C

MBH554

30 handbook, halfpage

ID (mA)

VGS = 0 V

−1 V

−2 V

−3 V

−4 V

VDS (V)

VDS = 15 V; Tj = 25 °C.

Fig.8 Output characteristics for BF245C; typical values.

MGE776

15 handbook, halfpage

ID (mA)

VGS = 0 V

−1 V

−2 V

0	50	100	Tj (°C)	150
			Tj (°C)

VDS = 15 V.

Fig.10 Drain current as a function of junction temperature; typical values for BF245B.

MGE775

4 handbook, halfpage

ID (mA)

3
3			VGS = 0 V
			VGS = 0 V

2			−0.5 V
2

1			−1 V
			−1.5 V
0
0		100
0	50	100	Tj (°C)	150
			Tj (°C)

VDS = 15 V.

Fig.9 Drain current as a function of junction temperature; typical values for BF245A.

MGE779

20 handbook, halfpage

ID (mA)

VGS = 0 V

8
8			−2 V
			−2 V
4
4			−4 V
			−4 V
0
0
0	50	100	Tj (°C)	150
			Tj (°C)

VDS = 15 V.

Fig.11 Drain current as a function of junction temperature; typical values for BF245C.

1996 Jul 30

Philips Semiconductors	Product speciﬁcation

N-channel silicon ﬁeld-effect transistors	BF245A; BF245B; BF245C

			MGE778
103				102
handbook, halfpage				bis
gis


(μA/V)				(mA/V)
(μA/V)		gis		(mA/V)
102				10
102				10


10		bis		1





1				10−1








10	102	f (MHz)	103
		f (MHz)

VDS = 15 V; VGS = 0; Tamb = 25 °C.

Fig.12 Input admittance; typical values.

104				MGE780
104					10
handbook, halfpage					Crs
brs



(μA/V)					(pF)
(μA/V)					(pF)

103		Crs			1









102		brs			10−1
102					10−1
10					10−2








10	102		f (MHz)	103
			f (MHz)

VDS = 15 V; VGS = 0; Tamb = 25 °C.

Fig.13 Common source reverse admittance as a function of frequency; typical values.

MGE782

handbook,g ,

halfpage

−bfs

(mA/V)

−

102

103

f (MHz)

VDS = 15 V; VGS = 0; Tamb = 25 °C.

Fig.14 Common-source forward transfer admittance as a function of frequency; typical values.

103	MGE783
		10


handbook, halfpage		bos
gos



(μA/V)		(mA/V)
(μA/V)	bos	(mA/V)
102	bos	1






10	gos	10−1

1				10−2
1				10−2
10	102	f (MHz)	103
		f (MHz)

VDS = 15 V; VGS = 0; Tamb = 25 °C.

Fig.15 Common-source output admittance as a function of frequency; typical values.

1996 Jul 30

Philips Semiconductors	Product speciﬁcation

N-channel silicon ﬁeld-effect transistors	BF245A; BF245B; BF245C

MGE777

6 handbook, halfpage

Cis (pF)

typ

0	−2	−4	−6	−8	−10
				VGS (V)

VDS = 20 V; f = 1 MHz; Tamb = 25 °C.

Fig.16 Input capacitance as a function of gate-source voltage; typical values.

MGE781

1.5 handbook, halfpage

Crs (pF)

typ

0.5	−2	−4	−6	−8	−10
0

VGS (V)

VDS = 20 V; f = 1 MHz; Tamb = 25 °C.

Fig.17 Reverse transfer capacitance as a function of gate-source voltage; typical values.

MGE791

8 handbook, halfpage

|yfs| (mA/V)

BF245B BF245C

BF245A

ID (mA)

VDS = 15 V; f = 1 kHz; Tamb = 25 °C.

Fig.18 Forward transfer admittance as a function of drain current; typical values.

	−10			MGE784
	−10
handbook, halfpage
VGSoff
at ID = 10 nA
(V)	−8
	−8
	−6
	−4
	−2		BF245C
	−2	BF245B
		BF245B
	−0	BF245A
	−0
	0	10	20	30

IDSS at VGS = 0 (mA)

VDS = 15 V; Tj = 25 °C.

Fig.19 Gate-source cut-off voltage as a function of drain current; typical values.

1996 Jul 30

Philips Semiconductors	Product speciﬁcation

N-channel silicon ﬁeld-effect transistors	BF245A; BF245B; BF245C

MGE790

103 handbook, halfpage

RDSon (kΩ)

102


10














1	BF245A


			BF245B
			BF245B

			BF245C
10−1

	−1	−2	−3	−4
0	−1	−2	−3	−4

VGS (V)

VDS = 0; f = 1 kHz; Tamb = 25 °C.

Fig.20 Drain-source on-state resistance as a function of gate-source voltage; typical values.

MGE786

3 handbook, halfpage

F (dB)

typ

1	10	102	103
			f (MHz)

VDS = 15 V; VGS = 0; RG = 1 kΩ; Tamb = 25 °C.

Input tuned to minimum noise.

Fig.21 Noise figure as a function of frequency; typical values.

1996 Jul 30

Philips Semiconductors					Product speciﬁcation
N-channel silicon ﬁeld-effect transistors				BF245A; BF245B; BF245C
PACKAGE OUTLINE
handbook, full pagewidth
					0.40
					min
		4.2 max
		1.7	5.2 max	12.7 min
		1.4	5.2 max	12.7 min
		1.4
		1			0.48
4.8			2		0.40
4.8	2.54		2
max	2.54
max
		3	0.66
			0.66
			0.56
				2.5 max (1)	MBC015 - 1
Dimensions in mm.

(1) Terminal dimensions within this zone are uncontrolled.

Fig.22 TO-92 variant.

1996 Jul 30

Источник: https://studfile.net/preview/16504264/

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