Материал: 9888
DISCRETE SEMICONDUCTORS
BF245A; BF245B; BF245C
N-channel silicon field-effect transistors
Product specification |
1996 Jul 30 |
Supersedes data of April 1995
File under Discrete Semiconductors, SC07
Philips Semiconductors |
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Product specification |
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N-channel silicon field-effect transistors |
BF245A; BF245B; BF245C |
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FEATURES |
PINNING |
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·Interchangeability of drain and source connections
·Frequencies up to 700 MHz.
APPLICATIONS
· LF, HF and DC amplifiers.
DESCRIPTION
General purpose N-channel symmetrical junction field-effect transistors in a plastic TO-92 variant package.
CAUTION
The device is supplied in an antistatic package. The gate-source input must be protected against static discharge during transport or handling.
PIN |
SYMBOL |
DESCRIPTION |
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1 |
d |
drain |
2 |
s |
source |
3 |
g |
gate |
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1
handbook, halfpage2 |
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3 |
d |
g |
s |
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MAM257 |
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Fig.1 Simplified outline (TO-92 variant) |
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and symbol. |
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QUICK REFERENCE DATA
SYMBOL |
PARAMETER |
CONDITIONS |
MIN. |
TYP. |
MAX. |
UNIT |
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VDS |
drain-source voltage |
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- |
- |
±30 |
V |
VGSoff |
gate-source cut-off voltage |
ID = 10 nA; VDS = 15 V |
-0.25 |
- |
-8 |
V |
VGSO |
gate-source voltage |
open drain |
- |
- |
-30 |
V |
IDSS |
drain current |
VDS = 15 V; VGS = 0 |
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BF245A |
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2 |
- |
6.5 |
mA |
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BF245B |
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6 |
- |
15 |
mA |
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BF245C |
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12 |
- |
25 |
mA |
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Ptot |
total power dissipation |
Tamb = 75 °C |
- |
- |
300 |
mW |
ïyfsï |
forward transfer admittance |
VDS = 15 V; VGS = 0; |
3 |
- |
6.5 |
mS |
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f = 1 kHz; Tamb = 25 °C |
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Crs |
reverse transfer capacitance |
VDS = 20 V; VGS = -1 V; |
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1.1 |
- |
pF |
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f = 1 MHz; Tamb = 25 °C |
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1996 Jul 30 |
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Philips Semiconductors |
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Product specification |
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N-channel silicon field-effect transistors |
BF245A; BF245B; BF245C |
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LIMITING VALUES |
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In accordance with the Absolute Maximum Rating System (IEC 134). |
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SYMBOL |
PARAMETER |
CONDITIONS |
MIN. |
MAX. |
UNIT |
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VDS |
drain-source voltage |
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− |
±30 |
V |
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VGDO |
gate-drain voltage |
open source |
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− |
−30 |
V |
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VGSO |
gate-source voltage |
open drain |
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− |
−30 |
V |
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ID |
drain current |
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− |
25 |
mA |
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IG |
gate current |
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− |
10 |
mA |
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Ptot |
total power dissipation |
up to Tamb = 75 °C; |
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− |
300 |
mW |
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up to Tamb = 90 °C; note 1 |
− |
300 |
mW |
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Tstg |
storage temperature |
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−65 |
+150 |
°C |
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Tj |
operating junction temperature |
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− |
150 |
°C |
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Note
1.Device mounted on a printed-circuit board, minimum lead length 3 mm, mounting pad for drain lead minimum 10 mm × 10 mm.
THERMAL CHARACTERISTICS
SYMBOL |
PARAMETER |
CONDITIONS |
VALUE |
UNIT |
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Rth j-a |
thermal resistance from junction to ambient |
in free air |
250 |
K/W |
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thermal resistance from junction to ambient |
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200 |
K/W |
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STATIC CHARACTERISTICS
Tj = 25 °C; unless otherwise specified.
SYMBOL |
PARAMETER |
CONDITIONS |
MIN. |
MAX. |
UNIT |
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V(BR)GSS |
gate-source breakdown voltage |
IG = −1 μA; VDS = 0 |
−30 |
− |
V |
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VGSoff |
gate-source cut-off voltage |
ID = 10 nA; VDS = 15 V |
−0.25 |
−8.0 |
V |
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VGS |
gate-source voltage |
ID = 200 μA; VDS = 15 V |
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BF245A |
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−0.4 |
−2.2 |
V |
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BF245B |
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−1.6 |
−3.8 |
V |
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BF245C |
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−3.2 |
−7.5 |
V |
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IDSS |
drain current |
VDS = 15 V; VGS = 0; note 1 |
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BF245A |
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2 |
6.5 |
mA |
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BF245B |
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6 |
15 |
mA |
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BF245C |
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12 |
25 |
mA |
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IGSS |
gate cut-off current |
VGS = −20 V; VDS = 0 |
− |
−5 |
nA |
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VGS = −20 V; VDS = 0; Tj = 125 °C |
− |
−0.5 |
μA |
Note
1. Measured under pulse conditions: tp = 300 μs; δ ≤ 0.02.
1996 Jul 30 |
3 |
Philips Semiconductors |
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Product specification |
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N-channel silicon field-effect transistors |
BF245A; BF245B; BF245C |
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DYNAMIC CHARACTERISTICS |
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Common source; Tamb = 25 °C; unless otherwise specified. |
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SYMBOL |
PARAMETER |
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CONDITIONS |
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MIN. |
TYP. |
MAX. |
UNIT |
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Cis |
input capacitance |
VDS = 20 V; VGS = -1 V; f = 1 MHz |
- |
4 |
- |
pF |
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Crs |
reverse transfer capacitance |
VDS = 20 V; VGS = -1 V; f = 1 MHz |
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1.1 |
- |
pF |
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Cos |
output capacitance |
VDS = 20 V; VGS = -1 V; f = 1 MHz |
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1.6 |
- |
pF |
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gis |
input conductance |
VDS = 15 V; VGS = 0; f = 200 |
MHz |
- |
250 |
- |
mS |
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gos |
output conductance |
VDS = 15 V; VGS = 0; f = 200 |
MHz |
- |
40 |
- |
mS |
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ïyfsï |
forward transfer admittance |
VDS = 15 V; VGS = 0; f = 1 kHz |
3 |
- |
6.5 |
mS |
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VDS = 15 V; VGS = 0; f = 200 MHz |
- |
6 |
- |
mS |
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ïyrsï |
reverse transfer admittance |
VDS = 15 |
V; VGS = 0; f = 200 |
MHz |
- |
1.4 |
- |
mS |
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ïyosï |
output admittance |
VDS = 15 |
V; VGS = 0; f = 1 kHz |
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25 |
- |
mS |
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fgfs |
cut-off frequency |
VDS = 15 |
V; VGS = 0; gfs = 0.7 of its |
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700 |
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MHz |
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value at 1 kHz |
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F |
noise figure |
VDS = 15 |
V; VGS = 0; f = 100 |
MHz; |
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1.5 |
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dB |
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RG = 1 kW (common source); |
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input tuned to minimum noise |
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−10 |
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MGE785 |
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MGE789 |
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handbook, halfpage |
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handbook, halfpage |
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IGSS |
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ID |
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(mA) |
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(nA) |
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5 |
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−1 |
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4 |
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−10−1 |
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typ |
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3 |
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2 |
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−10−2 |
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1 |
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−10−3 |
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0 |
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0 |
50 |
100 |
° |
150 |
−4 |
−2 |
VGS (V) |
0 |
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Tj ( C) |
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VDS = 0; VGS = −20 V. |
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VDS = 15 V; Tj = 25 °C. |
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Fig.2 Gate leakage current as a function of |
Fig.3 Transfer characteristics for BF245A; |
junction temperature; typical values. |
typical values. |
1996 Jul 30 |
4 |
Philips Semiconductors |
Product specification |
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N-channel silicon field-effect transistors |
BF245A; BF245B; BF245C |
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MBH555
6
handbook, halfpage
ID (mA)
5
4 |
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VGS = 0 V |
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3 |
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−0.5 V |
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2 |
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1 |
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−1 V |
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0 |
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−1.5 V |
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0 |
10 |
VDS (V) |
20 |
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VDS = 15 V; Tj = 25 °C.
Fig.4 Output characteristics for BF245A; typical values.
MBH553
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handbook, halfpage |
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(mA) |
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10 |
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GS = |
0 V |
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− |
0.5 |
V |
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5 |
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1 V |
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− |
1.5 |
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−2 V |
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−2.5 V |
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0 |
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10 |
VDS (V) |
20 |
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VDS = 15 V; Tj = 25 °C.
Fig.6 Output characteristics for BF245B; typical values.
MGE787
15 handbook, halfpage
ID (mA)
10
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4 |
−2 |
VGS (V) |
0 |
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VDS = 15 V; Tj = 25 °C.
Fig.5 Transfer characteristics for BF245B; typical values.
MGE788
30 handbook, halfpage
ID (mA)
20
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−10 |
−5 |
VGS (V) |
0 |
VDS = 15 V; Tj = 25 °C.
Fig.7 Transfer characteristics for BF245C; typical values.
1996 Jul 30 |
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