Материал: 9688

Thyristors

BT168 series

logic level for RCD/ GFI applications

GENERAL DESCRIPTION

QUICK REFERENCE DATA

Glass

passivated, sensitive gate

SYMBOL

PARAMETER

MAX.

MAX.

MAX.

MAX.

UNIT

thyristors in a plastic envelope,

BT168

B

D

E

G

intended for use in Residual Current

Devices/ Ground

Fault Interrupters

VDRM,

Repetitive peak

200

400

500

600

V

(RCD/ GFI) applications

where a

VRRM

off-state voltages

minimum IGT limit is needed. These

IT(AV)

Average on-state

0.5

0.5

0.5

0.5

A

devices may be interfaced directly to

current

microcontrollers,

logic

integrated

IT(RMS)

RMS on-state current

0.8

0.8

0.8

0.8

A

circuits and other low power gate

ITSM

Non-repetitive peak

8

8

8

8

A

trigger circuits.

on-state current

PINNING - TO92 variant

PIN CONFIGURATION

SYMBOL

PIN

DESCRIPTION

1

anode

a

k

3 2 1

g

LIMITING VALUES

Limiting values in accordance with the Absolute Maximum System (IEC 134).

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

B

D

E

G

V

, V

RRM

Repetitive peak off-state

-

2001

4001

5001

6001

V

DRM

voltages

IT(AV)

Average on-state current

half sine wave;

-

0.5

A

IT(RMS)

Tlead ≤ 83 ˚C

RMS on-state current

all conduction angles

-

0.8

A

ITSM

Non-repetitive peak

t = 10 ms

-

8

A

on-state current

t = 8.3 ms

-

9

A

half sine wave;

Tj = 125 ˚C prior to

surge; with reapplied

I2t

I2t for fusing

VDRM(max)

-

0.32

A2s

t = 10 ms

dIT/dt

Repetitive rate of rise of

ITM = 2 A; IG = 10 mA;

-

50

A/μs

on-state current after

dIG/dt = 100 mA/μs

triggering

IGM

Peak gate current

-

1

A

VGM

Peak gate voltage

-

5

V

VRGM

Peak reverse gate voltage

-

5

V

PGM

Peak gate power

-

2

W

PG(AV)

Average gate power

over any 20 ms period

-

0.1

W

Tstg

Storage temperature

-40

150

˚C

Tj

Operating junction

-

125

˚C

temperature

February 1996

1

Rev 1.000

Thyristors

BT168 series

logic level for RCD/ GFI Applications

THERMAL RESISTANCES

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

Rth j-lead

Thermal resistance

-

-

60

K/W

junction to lead

Rth j-a

Thermal resistance

pcb mounted; lead length = 4mm

-

150

-

K/W

junction to ambient

STATIC CHARACTERISTICS

Tj = 25 ˚C unless otherwise stated

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

IGT

Gate trigger current

VD = 12 V; IT = 10 mA; gate open circuit

20

50

200

μA

IL

Latching current

VD = 12 V; IGT = 0.5 mA; RGK = 1 kΩ

-

2

6

mA

IH

Holding current

VD = 12 V; IGT = 0.5 mA; RGK = 1 kΩ

-

2

5

mA

VT

On-state voltage

IT = 1 A

-

1.2

1.35

V

VGT

Gate trigger voltage

VD = 12 V; IT = 10 mA; gate open circuit

-

0.5

0.8

V

VD = VDRM(max); IT = 10 mA; Tj = 125 ˚C;

0.2

0.3

-

V

gate open circuit

ID, IR

Off-state leakage current

VD = VDRM(max); VR = VRRM(max); Tj = 125 ˚C;

-

0.05

0.1

mA

RGK = 1 kΩ

DYNAMIC CHARACTERISTICS

Tj = 25 ˚C unless otherwise stated

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

dVD/dt

Critical rate of rise of

VDM = 67% VDRM(max); Tj = 125 ˚C;

-

25

-

V/μs

off-state voltage

exponential waveform; RGK = 1 kΩ

μs

tgt

Gate controlled turn-on

ITM = 2 A; VD = VDRM(max); IG = 10 mA;

-

2

-

time

dIG/dt = 0.1 A/μs

μs

tq

Circuit commutated

VD = 67% VDRM(max); Tj = 125 ˚C;

-

100

-

turn-off time

ITM = 1.6 A; VR = 35 V; dITM/dt = 30 A/μs;

dVD/dt = 2 V/μs; RGK = 1 kΩ

February 1996

2

Rev 1.000

Philips Semiconductors

Product specification

Thyristors

BT168 series

logic level for RCD/ GFI Applications

February 1996

3

Rev 1.000

Philips Semiconductors

Product specification

Thyristors

BT168 series

logic level for RCD/ GFI Applications

February 1996

4

Rev 1.000

Thyristors

BT168 series

logic level for RCD/ GFI Applications

MECHANICAL DATA

Dimensions in mm

2.54

Net Mass: 0.2 g

0.66

1.6

0.56

4.8 max

4.2 max

0.48

0.40

3 2

1 0.40

min

February 1996

5

Rev 1.000