Материал: 9237
DISCRETE SEMICONDUCTORS
book, halfpage
M3D088
BAS116
Low-leakage diode
Product specification |
1996 Mar 13 |
Supersedes data of June 1994
File under Discrete Semiconductors, SC01
Philips Semiconductors |
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Product specification |
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Low-leakage diode |
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BAS116 |
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FEATURES |
PINNING |
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∙ Plastic SMD package |
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PIN |
DESCRIPTION |
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∙ Low leakage current: typ. 3 pA |
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1 |
anode |
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∙ Switching time: typ. 0.8 μs |
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not connected |
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∙ Continuous reverse voltage: |
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cathode |
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max. 75 V |
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∙Repetitive peak reverse voltage: max. 85 V
∙Repetitive peak forward current: max. 500 mA.
APPLICATION
∙Low leakage current applications in surface mounted circuits.
DESCRIPTION
Epitaxial medium-speed switching diode with a low leakage current in a small plastic SOT23 SMD package.
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n.c. |
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Top view |
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MAM106 |
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Marking code: JVp.
Fig.1 Simplified outline (SOT23) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL |
PARAMETER |
CONDITIONS |
MIN. |
MAX. |
UNIT |
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VRRM |
repetitive peak reverse voltage |
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85 |
V |
VR |
continuous reverse voltage |
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75 |
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IF |
continuous forward current |
see Fig.2; note 1 |
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215 |
mA |
IFRM |
repetitive peak forward current |
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500 |
mA |
IFSM |
non-repetitive peak forward current |
square wave; Tj = 25 °C prior to surge; |
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see Fig.4 |
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tp = 1 μs |
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4 |
A |
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tp = 1 ms |
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1 |
A |
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tp = 1 s |
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0.5 |
A |
Ptot |
total power dissipation |
Tamb = 25 °C; note 1 |
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250 |
mW |
Tstg |
storage temperature |
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−65 |
+150 |
°C |
Tj |
junction temperature |
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150 |
°C |
Note
1. Device mounted on a FR4 printed-circuit board.
1996 Mar 13 |
2 |
Philips Semiconductors |
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Product specification |
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Low-leakage diode |
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BAS116 |
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ELECTRICAL CHARACTERISTICS |
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Tj = 25 °C unless otherwise specified. |
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SYMBOL |
PARAMETER |
CONDITIONS |
TYP. |
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MAX. |
UNIT |
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VF |
forward voltage |
see Fig.3 |
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IF = 1 mA |
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900 |
mV |
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IF = 10 mA |
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1000 |
mV |
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IF = 50 mA |
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1100 |
mV |
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IF = 150 mA |
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1250 |
mV |
IR |
reverse current |
see Fig.5 |
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VR = 75 V |
0.003 |
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5 |
nA |
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VR = 75 V; Tj = 150 °C |
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80 |
nA |
Cd |
diode capacitance |
f = 1 MHz; VR = 0; see Fig.6 |
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pF |
trr |
reverse recovery time |
when switched from IF = 10 mA to |
0.8 |
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μs |
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IR = 10 mA; RL = 100 Ω; |
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measured at IR = 1 mA; see Fig.7 |
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THERMAL CHARACTERISTICS
SYMBOL |
PARAMETER |
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CONDITIONS |
VALUE |
UNIT |
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Rth j-tp |
thermal resistance from junction to tie-point |
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330 |
K/W |
Rth j-a |
thermal resistance from junction to ambient |
note 1 |
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500 |
K/W |
Note
1. Device mounted on a FR4 printed-circuit board.
1996 Mar 13 |
3 |
Philips Semiconductors |
Product specification |
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Low-leakage diode |
BAS116 |
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GRAPHICAL DATA |
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MLB755 |
300 |
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MLB752 - 1 |
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300 |
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handbook, halfpage |
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handbook, halfpage |
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I F |
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I F |
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(mA) |
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(mA) |
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200 |
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200 |
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(1) |
(2) |
(3) |
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100 |
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100 |
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0 |
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0 |
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0 |
100 |
Tamb ( oC) |
200 |
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0 |
0.4 |
0.8 |
1.2 |
1.6 |
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VF (V) |
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(1) |
Tj = 150 °C; typical values. |
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Device mounted on a FR4 printed-circuit board. |
(2) |
Tj |
= 25 |
°C; typical values. |
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(3) |
Tj = 25 |
°C; maximum values. |
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Fig.2 Maximum permissible continuous forward |
Fig.3 |
Forward current as a function of forward |
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current as a function of ambient temperature. |
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voltage. |
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MBG704
102
IFSM
(A)
10
1
10−1
1 |
10 |
102 |
103 |
tp (μs) |
104 |
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Based on square wave currents; Tj = 25 °C prior to surge.
Fig.4 Maximum permissible non-repetitive peak forward current as a function of pulse duration.
1996 Mar 13 |
4 |
Philips Semiconductors |
Product specification |
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Low-leakage diode |
BAS116 |
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10 |
2 |
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MLB754 |
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MBG526 |
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handbook, halfpage |
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handbook, halfpage |
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I R |
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(nA) |
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Cd |
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10 |
(1) |
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(pF) |
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1 |
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1 |
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10 1 |
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10 2 |
(2) |
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10 3 |
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VR (V) 20 |
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50 |
100 |
150 |
o |
200 |
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10 |
15 |
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T j ( |
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C) |
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VR = 75 V. |
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f = 1 MHz; Tj = 25 °C. |
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Fig.5 Reverse current as a function of junction |
Fig.6 Diode capacitance as a function of reverse |
temperature. |
voltage; typical values. |
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t r |
t p |
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t |
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D.U.T. |
10% |
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R |
= 50 Ω |
IF |
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I F |
t rr |
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SAMPLING |
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OSCILLOSCOPE |
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V = VR |
IF x R S |
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R i = 50 Ω |
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90% |
(1) |
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VR |
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MGA881 |
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input signal |
output signal |
Fig.7 Reverse recovery time test circuit and waveforms.
1996 Mar 13 |
5 |