Материал: 9135
Philips Semiconductors Product specification
Rectifier diodes |
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BY329 series |
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fast, soft-recovery |
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GENERAL DESCRIPTION |
QUICK REFERENCE DATA |
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Glass-passivated double diffused |
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SYMBOL |
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PARAMETER |
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MAX. |
MAX. |
MAX. |
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UNIT |
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rectifier diodes in a plastic envelope |
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BY329 |
-800 |
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-1000 |
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-1200 |
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featuring low forward voltage drop, |
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fast reverse recovery and soft |
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VRRM |
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Repetitive peak reverse |
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800 |
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1000 |
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1200 |
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V |
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recovery characteristic. The devices |
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voltage |
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are intended for use in TV receivers, |
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IF(AV) |
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Average forward current |
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8 |
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8 |
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8 |
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A |
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monitors and switched mode power |
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IFSM |
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Non-repetitive peak |
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75 |
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75 |
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75 |
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A |
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supplies. |
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forward current |
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trr |
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Reverse recovery time |
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135 |
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135 |
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135 |
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ns |
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PINNING - TO220AC |
PIN CONFIGURATION |
SYMBOL |
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PIN DESCRIPTION
1cathode (k)
2anode (a)
tab cathode (k)
tab |
a |
k |
1 2
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL |
PARAMETER |
CONDITIONS |
MIN. |
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MAX. |
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UNIT |
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-800 |
-1000 |
-1200 |
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VRSM |
Non-repetitive peak reverse |
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- |
800 |
1000 |
1200 |
V |
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voltage |
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VRRM |
Repetitive peak reverse voltage |
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- |
800 |
1000 |
1200 |
V |
VRWM |
Crest working reverse voltage |
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- |
600 |
800 |
1000 |
V |
I |
Average forward current1 |
square wave; δ = 0.5; |
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8 |
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A |
F(AV) |
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Tmb ≤ 122 ˚C |
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- |
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7 |
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A |
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sinusoidal; a = 1.57; |
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IF(RMS) |
RMS forward current |
Tmb ≤ 125 ˚C |
- |
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11 |
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A |
t = 25 μs; δ = 0.5; |
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IFRM |
Repetitive peak forward current |
- |
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16 |
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A |
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IFSM |
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Tmb ≤ 122 ˚C |
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Non-repetitive peak forward |
t = 10 ms |
- |
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75 |
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A |
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current. |
t = 8.3 ms |
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82 |
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A |
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sinusoidal; Tj = 150 ˚C prior |
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to surge; with reapplied |
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I2t |
I2t for fusing |
VRWM(max) |
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28 |
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A2s |
t = 10 ms |
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Tstg |
Storage temperature |
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-40 |
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150 |
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˚C |
Tj |
Operating junction temperature |
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150 |
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˚C |
1 Neglecting switching and reverse current losses.
October 1994 |
1 |
Rev 1.100 |
Philips Semiconductors Product specification
Rectifier diodes |
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BY329 series |
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fast, soft-recovery |
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THERMAL RESISTANCES |
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SYMBOL |
PARAMETER |
CONDITIONS |
MIN. |
TYP. |
MAX. |
UNIT |
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Rth j-mb |
Thermal resistance junction to |
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2.0 |
K/W |
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mounting base |
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Rth j-a |
Thermal resistance junction to |
in free air. |
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60 |
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K/W |
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ambient |
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STATIC CHARACTERISTICS |
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Tj = 25 ˚C unless otherwise stated |
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SYMBOL |
PARAMETER |
CONDITIONS |
MIN. |
TYP. |
MAX. |
UNIT |
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VF |
Forward voltage |
IF = 20 A |
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1.5 |
1.85 |
V |
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IR |
Reverse current |
VR = VRWM; Tj = 125 ˚C |
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0.1 |
1.0 |
mA |
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DYNAMIC CHARACTERISTICS |
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Tj = 25 ˚C unless otherwise stated |
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SYMBOL |
PARAMETER |
CONDITIONS |
MIN. |
TYP. |
MAX. |
UNIT |
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trr |
Reverse recovery time |
IF = 1 A; VR > 30 V; -dIF/dt = 50 A/μs |
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100 |
135 |
ns |
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Qs |
Reverse recovery charge |
IF = 2 A; VR > 30 V; -dIF/dt = 20 A/μs |
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0.5 |
0.7 |
μC |
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dIR/dt |
Maximum slope of the reverse |
IF = 2 A; -dIF/dt = 20 A/μs |
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50 |
60 |
A/μs |
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recovery current |
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October 1994 |
2 |
Rev 1.100 |
Philips Semiconductors |
Product specification |
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Rectifier diodes |
BY329 series |
fast, soft-recovery |
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dI |
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F |
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F |
dt |
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trr |
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time |
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Qs |
25% |
100% |
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I |
I |
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R |
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rrm |
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Fig.1. Definition of trr, Qs and Irrm |
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PF / W |
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BY329 |
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Tmb(max) / C |
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20 |
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110 |
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Vo = 1.25 V |
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D = 1.0 |
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Rs = 0.03 Ohms |
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15 |
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0.5 |
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120 |
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10 |
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0.2 |
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130 |
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0.1 |
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I |
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tp |
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tp |
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5 |
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D = T |
140 |
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T |
t |
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0 |
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150 |
0 |
2 |
4 |
6 |
8 |
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10 |
12 |
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IF(AV) / A |
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Fig.2. Maximum forward dissipation, PF = f(IF(AV)); square wave current waveform; parameter D = duty cycle = tp/T.
IFS (RMS) / A |
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BY329 |
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100 |
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90 |
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80 |
IFSM |
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70 |
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60 |
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50 |
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40 |
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30 |
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20 |
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10 |
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0 |
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1ms |
10ms |
0.1s |
1s |
10s |
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tp / s |
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Fig.4. Maximum non-repetitive rms forward current. IF = f(tp); sinusoidal current waveform; Tj = 150˚C prior to surge with reapplied VRWM.
IF / A |
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BY229F |
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30 |
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Tj = 150 C |
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Tj = 25 C |
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20 |
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10 |
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typ |
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max |
0 |
0.5 |
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1.5 |
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0 |
1 |
2 |
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VF / V |
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Fig.5. Typical and maximum forward characteristic; IF = f(VF); parameter Tj
PF / W |
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BY329 |
Tmb(max) / C |
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15 |
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120 |
Vo = 1.25 V |
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a = 1.57 |
Rs = 0.03 Ohms |
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1.9 |
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10 |
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2.2 |
130 |
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2.8 |
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4 |
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5 |
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140 |
0 |
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150 |
0 |
2 |
4 |
6 |
8 |
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IF(AV) / A |
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Fig.3. Maximum forward dissipation, PF = f(IF(AV)); sinusoidal current waveform; parameter a = form
factor = IF(RMS)/IF(AV).
10 |
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Qs / uC |
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BY329 |
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Tj = 150 C |
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Tj = 25 C |
IF = 10 A |
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10 A |
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2 A |
1 A |
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1 |
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2 A |
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1 A |
0.1 |
10 |
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1 |
100 |
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-dIF/dt (A/us) |
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Fig.6. Maximum Qs at Tj = 25˚C and 150˚C
October 1994 |
3 |
Rev 1.100 |
Philips Semiconductors |
Product specification |
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Rectifier diodes |
BY329 series |
fast, soft-recovery |
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trr / ns |
BY329 |
1000 |
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IF = 10 A |
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10A |
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1 A |
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1A |
100 |
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Tj = 150 C |
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Tj = 25 C |
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10 |
1 |
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10 |
100 |
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-dIF/dt (A/us) |
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Fig.7. Maximum trr measured to 25% of Irrm; Tj = 25˚C |
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and 150˚C |
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100 |
Cd / pF |
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BY329 |
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10 |
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1 |
1 |
10 |
VR / V 100 |
1000 |
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Fig.8. Typical junction capacitance Cd at f = 1 MHz; |
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Tj = 25˚C |
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10 |
Zth j-mb / (K/W) |
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1 |
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0.1 |
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PD |
tp |
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t |
0.01 |
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10us |
100us |
1ms |
10ms |
0.1s |
1s |
10s |
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tp / s |
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Fig.9. Transient thermal impedance Zth = f(tp)
October 1994 |
4 |
Rev 1.100 |
Philips Semiconductors Product specification
Rectifier diodes |
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BY329 series |
fast, soft-recovery |
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MECHANICAL DATA |
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Dimensions in mm |
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4,5 |
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Net Mass: 2 g |
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max |
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10,3 |
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max |
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1,3 |
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3,7 |
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2,8 |
5,9 |
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min |
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15,8 |
3,0 max |
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max |
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not tinned |
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3,0 |
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13,5 |
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min |
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1,3 |
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max 1 |
2 |
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(2x) |
0,9 max (2x) |
0,6 |
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5,08 |
2,4 |
Fig.10. TO220AC; pin 1 connected to mounting base.
Notes
1.Accessories supplied on request: refer to mounting instructions for TO220 envelopes.
2.Epoxy meets UL94 V0 at 1/8".
October 1994 |
5 |
Rev 1.100 |