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Philips Semiconductors	Product specification

PowerMOS transistor												BUK202-50X
TOPFET high side switch
								IL / A					BUK202-50X
								40
						VBL		35				VBG / V =	13
					IB			30						7
				II				30
				II	B
					B
					I	IL		25						6
VBG					TOPFET	IL		25						6
VBG				IS	HSS	L
				IS	HSS	L
					S		VLG	20						5
	VIG	VSG			G		VLG							5
	VIG			RS	IG		LOAD	15
				RS	IG			15
								10
								10
								5
								0
								0	0.2	0.4		0.6	0.8	1
											VBL / V
Fig.4. High side switch measurements schematic.								Fig.7. Typical on-state characteristics, Tj = 25 ˚C.
	(current and voltage conventions)							IL = f(VBL); parameter VBG; tp = 250 ms
PD%				Normalised Power Derating				RON / mOhm					BUK202-50X
120								50
110
100								40
90								40
90
80
70								30
60
50								20
40								20
40
30								10
20								10
20
10
0								0
0	20	40	60	80	100	120	140	1			10			100
				Tmb /	C						VBG / V
Fig.5.	Normalised limiting power dissipation.							Fig.8.	Typical on-state resistance, Tj = 25 ˚C.
	PD% = 100×PD/PD(25 ˚C) = f(Tmb)							RON = f(VBG); conditions: IL = 10 A; tp = 300 ms
IL / A						BUK202-50X		RON / mOhm					BUK202-50X
								80
								70					VBG =
20								60						5 V
								60						5 V
								50						13 V
								40
10								30				typ.
								20
								10
0								0
0	20	40	60	80	100	120	140	-60	-20	20	60	100	140	180
				Tmb / C							Tj / C
Fig.6.	Limiting continuous on-state load current.							Fig.9.	Typical on-state resistance, tp = 300 ms.
IL = f(Tmb); conditions: VIG = 5 V, VBG = 13 V								RON = f(Tj); parameter VBG; condition IL = 2 A

April 1995

Rev 1.100

IG / mA					BUK202-50X
5
				CLAMPING
4
3
		OPERATING	VIG = 3 V
2
				HIGH VOLTAGE
1
		QUIESCENT		VIG = 0 V
0
0	10	20	30	40	50	60
			VBG / V
Fig.10. Typical supply characteristics, 25 ˚C.
		IG = f(VBG); parameter VIG

IG / mA					BUK202-50X
3
				VBG / V =
2
						13
1
						50
0
-60	-20	20	60	100	140	180
			Tj / C
Fig.11. Typical operating supply current.
IG = f(Tj); parameter VBG; condition VIG = 5 V
IB					BUK202-50X
100 uA
10 uA
1 uA
100 nA
10 nA
-60	-20	20	60	100	140	180
			Tj / C

Fig.12. Typical supply quiescent current.

IB = f(Tj); condition VBG = 13 V, VIG = 0 V, VLG = 0 V

Fig.13. Typical off-state leakage current.
IL = f(Tj); conditions: VBL = 13 V = VBG; VIG = 0 V.
II / uA			BUK202-50X
200
150		VBG / V =	5
150
			7
100
			13
50
0
0	2	4	6	8
		VIG / V

Fig.14. Typical input characteristics, Tj = 25 ˚C. II = f(VIG); parameter VBG

April 1995

Rev 1.100

VIG / V					BUK202-50X
3.0
2.5
2.0				VIG(ON)
2.0
1.5				VIG(OFF)
				VIG(OFF)
1.0
-60	-20	20	60	100	140	180
			Tj / C
Fig.16. Typical input threshold voltages.
VIG = f(Tj); conditions VBG = 13 V, IL = 100 mA
VIG / V					BUK202-50X
8.0
7.5
7.0
6.5
-60	-20	20	60	100	140	180
			Tj / C
Fig.17. Typical input clamping voltage.
VIG = f(Tj); conditions II = 200 μA, VBG = 13 V
IS / mA					BUK202-50X
20
15
10
5
0
0	2	4		6	8	10
			VSG / V

Fig.18. Typical status characteristic, Tj = 25 ˚C. IS = f(VSG); conditions VIG = VBG = 0 V

-60		-20	20		60	100		140	180
					Tj / C
Fig.19. Typical status leakage current.
IS = f(Tj); conditions VSG = 5 V, VIG = VBG = 0 V
IS / uA								BUK202-50X
1000
800
600
400
200
0
0	0.2	0.4	0.6	0.8	1	1.2	1.4	1.6	1.8	2
					VSG / V
Fig.20.	Typical status low characteristic, Tj = 25 ˚C.
IS = f(VSG); conditions VIG = 5 V, VBG = 13 V, IL = 0 A
VSG / V								BUK202-50X
1
0.8
0.6
0.4
0.2
0
-60	-20		20		60	100		140	180
					Tj / C

Fig.21. Typical status low voltage, VSG = f(Tj). conditions IS = 50 μA, VIG = 5 V, VBG = 13 V, IL = 0 A

April 1995

Rev 1.100

VSG / V					BUK202-50X
8.0
7.5
7.0
6.5
-60	-20	20	60	100	140	180
			Tj / C
Fig.22. Typical status clamping voltage, VSG = f(Tj).
	conditions IS = 100			μA, VBG = 13 V
IL(OC) / A					BUK202-50X
1.0
0.8			max.
0.6
			typ.
0.4
0.2
			min.
0
-60	-20	20	60	100	140	180
			Tj / C
Fig.23. Low load current detection threshold.
IL(OC) = f(Tj); conditions VIG = 5 V; VBG = 13 V
VBG(TO) / V					BUK202-50X
5
4
					on
3
2					off
2
1
0
-60	-20	20	60	100	140	180
			Tj / C
Fig.24. Supply typical undervoltage thresholds.
VBG(TO) = f(Tj); conditions VIG = 3 V; IL = 100 mA

Fig.25. Supply typical overvoltage thresholds. VBG(LP) = f(Tj); conditions VIG = 5 V; IL = 100 mA

Fig.26. Typical battery to ground clamping voltage. VBG = f(Tj); parameter IG

IL / A				BUK202-50X
50
40
30
20
10
0
-24	-20	-16	-12	-8	-4	0
			VLG / V
Fig.27. Typical negative load clamping characteristic.
IL = f(VLG); conditions VIG = 0 V, tp = 300					μs, 25 ˚C

April 1995

Rev 1.100

Philips Semiconductors	Product specification

PowerMOS transistor														BUK202-50X
TOPFET high side switch
VLG / V					BUK202-50X			IL / A							BUK202-50X
-10							0
-12			IL =				-10
-12

-14				1 mA
-14
							-20
-16
				10 A			-30
-18
					tp = 300 us		-40
-20							-40
-20
-22							-50
-60	-20	20	60	100	140	180		-1.1		-0.9	-0.7	-0.5		-0.3	-0.1
			Tj / C									VBL / V
Fig.28.	Typical negative load clamping voltage.							Fig.31.		Typical reverse diode characteristic.
VLG = f(Tj); parameter IL; condition VIG = 0 V.								IL = f(VBL); conditions VIG = 0 V, Tj = 25 ˚C
VBL / V					BUK202-50X			10 nF	Cbl					BUK202-50X
65								10 nF
					IL =
			tp = 300 us			4 A
						4 A
60						1 mA
						1 mA
						100 uA		1 nF
						100 uA
55
50							100 pF		0		10	20	30	40	50
-60	-20	20	60	100	140	180			0		10	20	30	40	50
			Tj / C									VBL / V
Fig.29.	Typical battery to load clamping voltage.						Fig.32.		Typical output capacitance. Tmb = 25 ˚C
VBL = f(Tj); parameter IL; condition IG = 5 mA.								Cbl = f(VBL); conditions f = 1 MHz, VIG = 0 V
0 IG / mA					BUK202-50X		70	IL / A						BUK202-50X
							60			VBL(TO) typ.			current limiting
							60						current limiting
-50							50
							50
							40	tp =				50 us
							40					50 us
-100													i.e. before short
							30			300 us			circuit load trip
-150							20
-150
							10
-200							0
-1		-0.8	-0.6	-0.4	-0.2	0		0		4	8	12	16	20	24
			VBG / V									VBL / V
Fig.30.	Typical reverse battery characteristic.						Fig.33.		Typical overload characteristic, Tmb = 25 ˚C.
IG = f(VBG); conditions IL = 0 A, Tj = 25 ˚C								IL = f(VBL); condition VBG = 13 V; parameter tp

April 1995

Rev 1.100

Источник: https://studfile.net/preview/16504005/

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