Материал: m4n37rev0
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by M4N37/D
6-Pin DIP Optoisolators
Transistor Output
The M4N37 device consists of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon phototransistor detector.
•Current Transfer Ratio Ð 100% Minimum @ Specified Conditions
•Guaranteed Switching Speeds
•Meets or Exceeds All JEDEC Registered Specifications
Applications
•General Purpose Switching Circuits
•Interfacing and coupling systems of different potentials and impedances
•Regulation Feedback Circuits
•Monitor & Detection Circuits
•Solid State Relays
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Rating |
Symbol |
Value |
Unit |
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INPUT LED |
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Reverse Voltage |
VR |
6 |
Volts |
Forward Current Ð Continuous |
IF |
60 |
mA |
LED Power Dissipation @ TA = 25°C |
PD |
100 |
mW |
with Negligible Power in Output Detector |
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Derate above 25°C |
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1.41 |
mW/°C |
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OUTPUT TRANSISTOR |
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Collector±Emitter Voltage |
VCEO |
30 |
Volts |
Emitter±Base Voltage |
VEBO |
7 |
Volts |
Collector±Base Voltage |
VCBO |
70 |
Volts |
Collector Current Ð Continuous |
IC |
50 |
mA |
Detector Power Dissipation @ TA = 25°C |
PD |
150 |
mW |
with Negligible Power in Input LED |
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Derate above 25°C |
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1.76 |
mW/°C |
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TOTAL DEVICE |
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Isolation Source Voltage(1) |
V |
7500 |
Vac(pk) |
(Peak ac Voltage, 60 Hz, 1 sec Duration) |
ISO |
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Total Device Power Dissipation @ TA = 25°C |
PD |
250 |
mW |
Derate above 25°C |
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2.94 |
mW/°C |
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Ambient Operating Temperature Range(2) |
T |
± 55 to +100 |
°C |
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A |
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Storage Temperature Range(2) |
T |
± 55 to +150 |
°C |
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stg |
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Soldering Temperature (10 sec, 1/16″ from case) |
TL |
260 |
°C |
1.Isolation surge voltage is an internal device dielectric breakdown rating. For this test, Pins 1 and 2 are common, and Pins 4, 5 and 6 are common.
2.Refer to Quality and Reliability Section in Opto Data Book for information on test conditions.
M4N37
STYLE 1 PLASTIC
6
1
STANDARD THRU HOLE
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SCHEMATIC |
1 |
6 |
2 |
5 |
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3 |
4 |
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PIN 1. LED ANODE
2.LED CATHODE
3.N.C.
4.EMITTER
5.COLLECTOR
6.BASE
Motorola Optoelectronics Device Data
Motorola, Inc. 1997
M4N37 |
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ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)(1) |
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Characteristic |
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Symbol |
Min |
Typ(1) |
Max |
Unit |
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INPUT LED |
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Forward Voltage (I |
F |
= 10 mA) |
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T = 25°C |
VF |
0.8 |
1.15 |
1.5 |
Volts |
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A |
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TA = ±55°C |
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0.9 |
1.3 |
1.7 |
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TA = 100°C |
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0.7 |
1.05 |
1.4 |
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Reverse Leakage Current (VR = 6 V) |
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IR |
Ð |
Ð |
10 |
μA |
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Capacitance (V = 0 V, f = 1 MHz) |
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CJ |
Ð |
18 |
Ð |
pF |
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OUTPUT TRANSISTOR |
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Collector±Emitter Dark Current |
(VCE = 10 V, TA = 25°C) |
ICEO |
Ð |
1 |
50 |
nA |
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(VCE = 30 V, TA = 100°C) |
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Ð |
Ð |
500 |
μA |
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Collector±Base Dark Current (VCB = 10 V) |
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TA = 25°C |
ICBO |
Ð |
0.2 |
20 |
nA |
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TA = 100°C |
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100 |
Ð |
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Collector±Emitter Breakdown Voltage (IC = 1 mA) |
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V(BR)CEO |
30 |
45 |
Ð |
Volts |
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Collector±Base Breakdown Voltage (IC = 100 μA) |
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V(BR)CBO |
70 |
100 |
Ð |
Volts |
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Emitter±Base Breakdown Voltage (IE = 100 μA) |
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V(BR)EBO |
7 |
7.8 |
Ð |
Volts |
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DC Current Gain (IC = 2 mA, VCE = 5 V) |
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hFE |
Ð |
400 |
Ð |
Ð |
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Collector±Emitter Capacitance (f = 1 MHz, VCE = 0) |
CCE |
Ð |
7 |
Ð |
pF |
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Collector±Base Capacitance (f = 1 MHz, VCB = 0) |
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CCB |
Ð |
19 |
Ð |
pF |
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Emitter±Base Capacitance (f = 1 MHz, VEB = 0) |
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CEB |
Ð |
9 |
Ð |
pF |
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COUPLED |
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Output Collector Current |
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T = 25°C |
I (CTR)(2) |
10 (100) |
30 (300) |
Ð |
mA (%) |
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A |
C |
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(IF = 10 mA, VCE = 10 V) |
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TA = ±55°C |
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4 (40) |
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TA = 100°C |
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4 (40) |
Ð |
Ð |
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Collector±Emitter Saturation Voltage (IC = 0.5 mA, IF = 10 mA) |
VCE(sat) |
Ð |
0.14 |
0.3 |
Volts |
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Turn±On Time |
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ton |
Ð |
7.5 |
10 |
μs |
Turn±Off Time |
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(I |
= 2 mA, V |
CC |
= 10 V, |
toff |
Ð |
5.7 |
10 |
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C |
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Rise Time |
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RL = 100 |
Ω)(3) |
t |
Ð |
3.2 |
Ð |
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r |
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Fall Time |
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tf |
Ð |
4.7 |
Ð |
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Isolation Voltage (f = 60 Hz, t = 1 sec) |
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VISO |
7500 |
Ð |
Ð |
Vac(pk) |
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Isolation Current(4) (V |
I±O |
= 1500 Vpk) |
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I |
Ð |
8 |
100 |
μA |
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ISO |
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Isolation Resistance (V = 500 V)(4) |
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RISO |
1011 |
Ð |
Ð |
Ω |
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Isolation Capacitance (V = 0 V, f = 1 MHz)(4) |
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CISO |
Ð |
0.2 |
2 |
pF |
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1.Always design to the specified minimum/maximum electrical limits (where applicable).
2.Current Transfer Ratio (CTR) = IC/IF x 100%.
3.For test circuit setup and waveforms, refer to Figure 14.
4.For this test, Pins 1 and 2 are common, and Pins 4, 5 and 6 are common.
2 |
Motorola Optoelectronics Device Data |
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M4N37 |
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1.4 |
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1.5 |
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NORMALIZED TO: |
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NCTR |
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1.3 |
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VCE = 10 V |
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(V) |
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TA = ±55°C |
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NORMALIZED CTR |
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IF = 10 mA |
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FORWARDVOLTAGE |
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1.2 |
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1.0 |
TA = 25°C |
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TA = 25°C |
CTRCE(sat) VCE = 0.4 V |
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1.1 |
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NCTR(sat) |
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1.0 |
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° |
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TA = 85 C |
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0.5 |
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, |
0.9 |
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NCTR, |
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TA = 25°C |
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V |
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0.8 |
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0.7 |
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0 |
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0.1 |
1.0 |
10 |
100 |
0 |
1.0 |
10 |
100 |
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IF, FORWARD CURRENT (mA) |
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IF, LED CURRENT (mA) |
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Figure 1. Forward Voltage vs. Forward Current |
Figure 2. Normalized Non±Saturated and |
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Saturated CTR, TA = 25°C vs. LED Current |
NCTR, NORMALIZED CTR
1.5 |
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1.5 |
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NORMALIZED TO: |
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NORMALIZED TO: |
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VCE = 10 V |
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VCE = 10 V |
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1.0 |
IF = 10 mA |
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NCTR |
CTR |
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IF = 10 mA |
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NCTR |
TA = 25°C |
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TA = 25 C |
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1.0 |
° |
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CTRCE(sat) VCE = 0.4 V |
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TA = 50°C |
NORMALIZED |
CTRCE(sat) VCE = 0.4 V |
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° |
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NCTR(sat) |
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TA = 70 C |
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NCTR(sat) |
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0.5 |
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NCTR, |
0.5 |
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0 |
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0 |
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0.1 |
1.0 |
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10 |
100 |
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0.1 |
1.0 |
10 |
100 |
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IF, LED CURRENT (mA) |
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IF, LED CURRENT (mA) |
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Figure 3. Normalized Non±Saturated and Saturated |
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Figure 4. Normalized Non±Saturated and Saturated |
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CTR, TA = 50°C vs. LED Current |
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CTR, TA = 70°C vs. LED Current |
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1.5 |
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NORMALIZED TO: |
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VCE = 10 V |
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CTR |
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IF = 10 mA |
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NCTR |
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TA = 25°C |
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NORMALIZED |
1.0 |
CTRCE(sat) VCE = 0.4 V |
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TA = 85°C |
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NCTR, |
0.5 |
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NCTR(sat) |
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0 |
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0.1 |
1.0 |
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10 |
100 |
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IF, LED CURRENT (mA)
Figure 5. Normalized Non±Saturated and Saturated CTR, TA = 85°C vs. LED Current
Motorola Optoelectronics Device Data |
3 |
M4N37 |
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35 |
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105 |
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25°C |
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104 |
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30 |
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50°C |
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103 |
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25 |
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VCE = 10 V |
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20 |
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85°C |
102 |
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CURRENT(mA) |
15 |
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° |
COLLECTOR±EMITTER, (nA) |
101 |
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70 C |
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TYPICAL |
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100 |
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10 |
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COLLECTOR, |
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CEO |
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CE |
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I |
±1 |
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I |
5.0 |
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10 |
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0 |
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10±2 |
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20 |
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±20 |
0 |
40 |
60 |
80 |
100 |
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0 |
10 |
20 |
30 |
40 |
50 |
60 |
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I , LED CURRENT (mA) |
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TA, AMBIENT TEMPERATURE (°C) |
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F |
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Figure 6. Collector±Emitter Current |
Figure 7. Collector±Emitter Leakage |
vs. Temperature and LED Current |
Current vs. Temperature |
NCTRCB, NORMALIZED CTR CB
1.5 |
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10 |
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NORMALIZED TO: |
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NORMALIZED TO: |
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±20°C |
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PHOTOCURRENT |
IF = 10 mA |
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= 10 mA |
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F |
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TA = 25°C |
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25°C |
70°C |
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V |
CB |
= 9.3 V |
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1.0 |
TA = 25°C |
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1.0 |
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50°C |
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0.5 |
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25°C |
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NORMALIZED |
0.1 |
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50°C |
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70°C |
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0 |
0.1 |
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1.0 |
10 |
100 |
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0.01 |
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0.1 |
1.0 |
10 |
100 |
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IF, LED CURRENT (mA) |
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I , LED CURRENT (mA) |
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F |
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Figure 8. Normalized CTRcb vs. LED |
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Figure 9. Normalized Photocurrent vs. |
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Current and Temperature |
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lF and Temperature |
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1.2 |
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70°C |
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NORMALIZED TO: |
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VCE = 10 V |
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50°C |
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FE |
1.0 |
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IB = 20 mA |
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H |
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25°C |
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TA = 25°C |
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, NORMALIZED |
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±20°C |
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0.8 |
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FE |
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NH |
0.6 |
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0.4 |
1.0 |
10 |
100 |
1000 |
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IB, BASE CURRENT (mA) |
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Figure 10. Normalized Non±Saturated HFE vs. Base Current and Temperature
4 |
Motorola Optoelectronics Device Data |
FE |
1.5 |
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1000 |
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H |
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NORMALIZED TO: |
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NORMALIZED SATURATED |
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70°C |
50°C |
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VCE = 10 V |
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IB = 20 mA |
100 |
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1.0 |
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TA = 25°C |
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25°C |
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±20°C |
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0.5 |
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10 |
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DELAYPROPAGATIONs)m( |
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, |
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, |
FE(sat) |
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LH |
VCE = 0.4 V |
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tp |
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NH |
|
|
|
||
0 |
|
|
|
1.0 |
|
|
|
|
|
||
|
1.0 |
|
10 |
100 |
1000 |
|
|
|
IB, BASE CURRENT (mA) |
|
|
|
|
|
M4N37 |
|
|
|
TA = 25°C |
2.5 |
|
|
|
|
|
|
|
|
IF = 10 mA |
|
(ms) |
tpHL |
|
VCC = 5.0 V |
|
|
|
VTH = 1.5 V |
2.0 |
DELAY |
|
|
|
|
||
|
|
|
|
|
tpLH |
|
|
1.5 |
, PROPAGATION |
|
|
|
||
|
|
|
|
HL |
|
|
|
|
tp |
|
|
|
1.0 |
|
0.1 |
1.0 |
10 |
100 |
|
|
RL, COLLECTOR LOAD RESISTOR (KW) |
|
|
|
Figure 11. Normalized HFE vs. Base Current |
Figure 12. Propagation Delay vs. Collector |
and Temperature |
Load Resistor |
IF
|
tD |
|
|
VO |
tR |
|
|
|
tPLH |
|
|
|
|
|
VTH = 1.5 V |
|
tPHL |
tS |
tF |
Figure 13. Switching Timing
|
VCC = 5.0 V |
||
F = 10 KHz |
|
|
|
|
RL |
||
DF = 50% |
|
|
|
VO
IF = 10 mA
Figure 14. Switching Schematic
Motorola Optoelectronics Device Data |
5 |