Материал: MJ14001R
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MJ14001/D
High-Current Complementary
Silicon Power Transistors
. . . designed for use in high±power amplifier and switching circuit applications,
•High Current Capability Ð I C Continuous = 60 Amperes
•DC Current Gain Ð h FE = 15±100 @ IC = 50 Adc
•Low Collector±Emitter Saturation Voltage Ð
VCE(sat) = 2.5 Vdc (Max) @ IC = 50 Adc
MAXIMUM RATINGS
Rating |
Symbol |
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MJ14002 |
Unit |
MJ14001 |
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MJ14003 |
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Collector±Emitter Voltage |
VCEO |
60 |
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80 |
Vdc |
Collector Base Voltage |
VCBO |
60 |
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80 |
Vdc |
Emitter±Base Voltage |
VEBO |
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5 |
Vdc |
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Collector Current Ð Continuous |
IC |
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60 |
Adc |
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Base Current Ð Continuous |
IB |
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15 |
Adc |
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Emitter Current Ð Continuous |
IE |
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75 |
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Total Power Dissipation @ TC = 25_C |
PD |
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300 |
Watts |
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Derate above 25_C |
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17 |
W/_C |
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Operating and Storage Junction |
TJ, Tstg |
± 65 to +200 |
_C |
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Temperature Range |
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THERMAL CHARACTERISTICS
Characteristic |
Symbol |
Max |
Unit |
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Thermal Resistance, Junction to Case |
RθJC |
0.584 |
_C/W |
NPN
MJ14002*
PNP
MJ14001 MJ14003*
*Motorola Preferred Device
60 AMPERES
COMPLEMENTARY
SILICON
POWER TRANSITORS
60 ± 80 VOLTS
300 WATTS
CASE 197A±05
TO±204AE (TO±3)
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360 |
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(WATTS) |
330 |
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270 |
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DISSIPATION |
210 |
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150 |
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POWER |
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90 |
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, |
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D |
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P |
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30 |
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0 |
40 |
80 |
120 |
160 |
200 |
240 |
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0 |
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TC, CASE TEMPERATURE (°C) |
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Figure 1. Power Derating
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 2
Motorola, Inc. 1995
MJ14002 |
MJ14001 |
MJ14003 |
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ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) |
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Characteristic |
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Symbol |
Min |
Max |
Unit |
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OFF CHARACTERISTICS |
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Collector±Emitter Sustaining Voltage (1) |
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VCEO(sus) |
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Vdc |
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(IC = 200 mAdc, IB = 0) |
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MJ14001 |
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60 |
Ð |
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MJ14002, MJ14003 |
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80 |
Ð |
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Collector Cutoff Current |
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ICEO |
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mA |
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(VCE = 30 Vdc, IB = 0) |
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MJ14001 |
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Ð |
1.0 |
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(VCE = 40 Vdc, IB = 0) |
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MJ14402, MJ14003 |
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Ð |
1.0 |
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Collector Cutoff Current |
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ICEX |
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mA |
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(VCE = 60 Vdc, VBE(off) = 1.5 V) |
MJ14001 |
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Ð |
1.0 |
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(VCE = 80 Vdc, VBE(off) = 1.5 V) |
MJ14002, MJ14003 |
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Ð |
1.0 |
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Collector Cutoff Current |
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ICBO |
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mA |
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(VCB = 60 Vdc, IE = 0) |
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MJ14001 |
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Ð |
1.0 |
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(VCB = 80 Vdc, IE = 0) |
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MJ14002, MJ14003 |
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Ð |
1.0 |
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Emitter Cutoff Current |
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IEBO |
Ð |
1.0 |
mA |
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(VBE = 5 Vdc, IC = 0) |
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ON CHARACTERISTICS |
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DC Current Gain (1) |
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hFE |
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Ð |
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(IC = 25 Adc, VCE = 3.0 V) |
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30 |
Ð |
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(IC = 50 Adc, VCE = 3.0 V) |
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15 |
100 |
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(IC = 60 Adc, VCE = 3.0 V) |
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5 |
Ð |
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Collector±Emitter Saturation Voltage (1) |
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VCE(sat) |
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Vdc |
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(IC = 25 Adc, IB = 2.5 Adc) |
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Ð |
1 |
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(IC = 50 Adc, IB = 5.0 Adc) |
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Ð |
2.5 |
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(IC = 60 Adc, IB = 12 Adc) |
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Ð |
3 |
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Base±Emitter Saturation Voltage (1) |
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VBE(sat) |
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Vdc |
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(IC = 25 Adc, IB = 2.5 Adc) |
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Ð |
2 |
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(IC = 50 Adc, IB = 5.0 Adc) |
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Ð |
3 |
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(IC = 60 Adc, IB = 12 Adc) |
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Ð |
4 |
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DYNAMIC CHARACTERISTICS |
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Output Capacitance |
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Cob |
Ð |
2000 |
pF |
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(VCB = 10 Vdc, IE = 0, f = 0.1 MHz) |
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(1) Pulse Test: Pulse Width = 300 μs, Duty Cycle v 2%. |
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100 |
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5.0 ms |
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1.0 ms |
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1.0 μs |
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70 |
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50 |
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(AMP) |
30 |
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20 |
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dc |
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CURRENT |
10 |
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7.0 |
TC = 25°C |
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5.0 |
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3.0 |
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WIRE BOND LIMIT |
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COLLECTOR |
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THERMAL LIMIT |
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2.0 |
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SECOND BREAKDOWN LIMIT |
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1.0 |
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0.7 |
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0.5 |
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, |
0.3 |
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C |
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I |
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MJ14001 |
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0.2 |
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0.1 |
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MJ14002, MJ14003 |
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30 |
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70 |
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1.0 |
2.0 |
3.0 |
5.0 |
7.0 |
10 |
20 |
50 |
100 |
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VCE, COLLECTOR±EMITTER VOLTAGE (VOLTS)
Figure 2. Maximum Rated Forward Biased
Safe Operating Area
There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC ± VCE limits of the transistor that must be observed for reliable operation: i.e., the transistor must not be subjected to greater dissipation than the curves indicate.
The data of Figure 2 is based on TJ(pk) = 200_C; TC is variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided TJ(pk) v 200_C. TJ(pk) may be calculated from the data in Figure 13. At high case temperatures, thermal limitations will re-
duce the power that can be handled to values less than the limitations imposed by second breakdown.
2 |
Motorola Bipolar Power Transistor Device Data |
MJ14002 MJ14001 MJ14003
TYPICAL ELECTRICAL CHARACTERISTICS
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NPN |
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PNP |
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MJ14002 |
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MJ14001, MJ14003 |
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300 |
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300 |
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200 |
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200 |
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GAIN |
100 |
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GAIN |
100 |
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70 |
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TJ = ± 55°C |
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70 |
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TJ = ± 55°C |
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CURRENT |
50 |
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CURRENT |
50 |
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30 |
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VCE = 3.0 V |
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30 |
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VCE = 3.0 V |
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, DC |
20 |
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TJ = 25°C |
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, DC |
20 |
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TJ = 25°C |
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TJ = 150°C |
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TJ = 150°C |
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FE |
10 |
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FE |
10 |
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h |
7.0 |
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h |
7.0 |
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5.0 |
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5.0 |
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3.0 |
1.0 |
2.0 |
3.0 |
5.0 |
7.0 |
10 |
20 |
30 |
50 |
70 |
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3.0 |
1.0 |
2.0 |
3.0 |
5.0 |
7.0 |
10 |
20 |
30 |
50 |
70 |
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0.7 |
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0.7 |
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IC, COLLECTOR CURRENT (AMPS) |
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IC, COLLECTOR CURRENT (AMPS) |
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Figure 3. DC Current Gain |
Figure 4. DC Current Gain |
(VOLTS) |
2.8 |
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(VOLTS) |
2.8 |
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2.4 |
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° |
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2.4 |
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° |
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VOLTAGE |
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TJ = 25 C |
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IC = 60 A |
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VOLTAGE |
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TJ = 25 C |
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IC = 60 A |
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2.0 |
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2.0 |
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COLLECTOR±EMITTER |
1.6 |
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COLLECTOR±EMITTER |
1.6 |
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1.2 |
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IC = 25 A |
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1.2 |
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IC = 25 A |
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0.8 |
IC = 10 A |
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0.8 |
IC = 10 A |
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0.4 |
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0.4 |
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, |
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, |
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CE |
0 |
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CE |
0 |
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V |
0.2 |
0.3 |
0.5 |
0.7 |
1.0 |
2.0 |
3.0 |
5.0 |
7.0 |
10 |
V |
0.2 |
0.3 |
0.5 |
0.7 |
1.0 |
2.0 |
3.0 |
5.0 |
7.0 |
10 |
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0.1 |
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0.1 |
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IB, BASE CURRENT (AMPS) |
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IB, BASE CURRENT (AMPS) |
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Figure 5. Collector Saturation Region |
Figure 6. Collector Saturation Region |
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2.8 |
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2.8 |
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= 25°C |
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° |
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T |
J |
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2.4 |
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TJ = 25 C |
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2.4 |
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(VOLTS) |
2.0 |
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(VOLTS) |
2.0 |
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1.6 |
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1.6 |
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VOLTAGE |
1.2 |
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VOLTAGE |
1.2 |
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VBE(sat) @ IC/IB = 10 |
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VBE(sat) @ IC/IB = 10 |
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V, |
0.8 |
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V, |
0.8 |
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VBE(on) @ VCE = 3.0 V |
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VBE(on) @ VCE = 3.0 V |
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0.4 |
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0.4 |
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VCE(sat) @ IC/IB = 10 |
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VCE(sat) @ IC/IB = 10 |
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0 |
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0 |
1.0 |
2.0 |
3.0 |
5.0 |
7.0 |
10 |
20 |
30 |
50 |
70 |
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1.0 |
2.0 |
3.0 |
5.0 |
7.0 |
10 |
20 |
30 |
50 |
70 |
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0.7 |
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0.7 |
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IC, COLLECTOR CURRENT (AMPS) |
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IC, COLLECTOR CURRENT (AMPS) |
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Figure 7. ªOnº Voltages |
Figure 8. ªOnº Voltages |
Motorola Bipolar Power Transistor Device Data |
3 |
MJ14002 |
MJ14001 |
MJ14003 |
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1.0 |
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4.0 |
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0.7 |
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3.0 |
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0.5 |
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tr |
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2.0 |
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ts |
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0.3 |
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1.0 |
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0.2 |
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( μs) |
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( μs) |
0.7 |
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0.07 |
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td |
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0.5 |
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tf |
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TIME |
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TIME |
0.3 |
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0.1 |
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t, |
0.05 |
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t, |
0.2 |
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0.03 |
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0.1 |
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0.02 |
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MJ14002 (NPN) |
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MJ14002 (NPN) |
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0.07 |
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MJ14001, MJ14003 (PNP) |
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MJ14001, MJ14003 (PNP) |
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0.01 |
1.0 |
2.0 |
3.0 |
5.0 |
7.0 |
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0.04 |
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0.7 |
10 |
20 |
30 |
50 |
70 |
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0.7 |
1.0 |
2.0 |
3.0 |
5.0 |
7.0 |
10 |
20 |
30 |
50 |
70 |
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IC, COLLECTOR CURRENT (AMPS) |
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IC, COLLECTOR CURRENT (AMPS) |
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Figure 9. Turn±On Switching Times |
Figure 10. Turn±Off Switching Times |
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VCC |
± 30 V |
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+ 2.0 V |
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RL |
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RB |
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0 |
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TO SCOPE |
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10000 |
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tr ≤ |
±12 V |
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tr ≤ 20 ns |
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7000 |
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5000 |
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20 ns |
10 to 100 μs |
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(pF) |
3000 |
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DUTY CYCLE ≈ 2.0% |
VCC |
± 30 V |
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2000 |
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RL |
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CAPACITANCE |
Cib |
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Cob |
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±12 V |
+10 |
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Cib |
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RB |
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1000 |
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0 |
V |
TO SCOPE |
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700 |
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C |
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tr ≤ 20 ns |
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500 |
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ob |
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tr ≤ 20 ns |
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C, |
TJ = 25°C |
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300 |
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10 to 100 μs |
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MJ14002 (NPN) |
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DUTY CYCLE ≈ 2.0% |
VBB |
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200 |
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MJ14001, MJ14003 (PNP) |
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+ 7.0 V |
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100 |
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FOR CURVES OF FIGURES 3 & 6, RB & RL ARE VARIED. |
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1.0 |
2.0 |
3.0 |
5.0 7.0 |
10 |
20 |
30 |
50 |
70 |
100 |
INPUT LEVELS ARE APPROXIMATELY AS SHOWN. |
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VR, REVERSE VOLTAGE (VOLTS) |
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FOR NPN CIRCUITS, REVERSE ALL POLARITIES. |
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Figure 11. Capacitance Variation |
Figure 12. Switching Test Circuit |
(NORMALIZED) |
1.0 |
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0.7 |
D = 0.5 |
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0.5 |
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RESISTANCE |
0.3 |
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0.2 |
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0.2 |
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0.1 |
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RθJC(t) = r(t) RθJC |
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P(pk) |
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0.1 |
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0.05 |
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RθJC = 0.584°C/W MAX |
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THERMAL |
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D CURVES APPLY FOR POWER |
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0.07 |
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0.02 |
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PULSE TRAIN SHOWN |
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t1 |
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0.05 |
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READ TIME AT t1 |
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t2 |
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TJ(pk) ± TC = P(pk) RθJC(t) |
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TRANSIENT |
0.03 |
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0.01 |
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DUTY CYCLE, D = t1/t2 |
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0.02 |
SINGLE PULSE |
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0.01 |
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r(t), |
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2.0 |
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10 |
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100 |
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500 700 1000 |
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0.02 |
0.03 |
0.05 |
0.07 |
0.1 |
0.2 |
0.3 |
0.5 |
0.7 |
1.0 |
3.0 |
5.0 |
7.0 |
20 |
30 |
50 |
70 |
200 |
300 |
2000 |
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t, TIME (ms)
Figure 13. Thermal Response
4 |
Motorola Bipolar Power Transistor Device Data |
MJ14002 MJ14001 MJ14003
PACKAGE DIMENSIONS
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A |
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N |
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C |
±T± |
SEATING |
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NOTES: |
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1. DIMENSIONING AND TOLERANCING PER ANSI |
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E |
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PLANE |
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Y14.5M, 1982. |
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D 2 PL |
K |
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2. CONTROLLING DIMENSION: INCH. |
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INCHES |
MILLIMETERS |
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0.30 (0.012) M |
T |
Q |
M |
Y |
M |
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DIM |
MIN |
MAX |
MIN |
MAX |
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U |
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A |
1.530 REF |
38.86 REF |
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±Y± |
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B |
0.990 |
1.050 |
25.15 |
26.67 |
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V |
L |
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C |
0.250 |
0.335 |
6.35 |
8.51 |
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2 |
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D |
0.057 |
0.063 |
1.45 |
1.60 |
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B |
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E |
0.060 |
0.070 |
1.53 |
1.77 |
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H |
G |
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G |
0.430 BSC |
10.92 BSC |
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1 |
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H |
0.215 BSC |
5.46 BSC |
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K |
0.440 |
0.480 |
11.18 |
12.19 |
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L |
0.665 BSC |
16.89 BSC |
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±Q± |
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N |
0.760 |
0.830 |
19.31 |
21.08 |
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0.25 (0.010) M |
T |
Y |
M |
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Q |
0.151 |
0.165 |
3.84 |
4.19 |
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U |
1.187 BSC |
30.15 BSC |
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V |
0.131 |
0.188 |
3.33 |
4.77 |
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STYLE 1: |
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PIN 1. BASE |
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2. EMITTER |
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CASE: COLLECTOR |
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CASE 197A±05
TO±204AE (TO±3)
ISSUE J
Motorola Bipolar Power Transistor Device Data |
5 |