Материал: 9877
DISCRETE SEMICONDUCTORS
handbook, 2 columns
M3D116
BYW54 to BYW56
Controlled avalanche rectifiers
Product specification |
1996 Jun 11 |
Supersedes data of April 1992
File under Discrete Semiconductors, SC01
Philips Semiconductors |
Product specification |
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Controlled avalanche rectifiers |
BYW54 to BYW56 |
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FEATURES
∙Glass passivated
∙High maximum operating temperature
∙Low leakage current
∙Excellent stability
∙Guaranteed avalanche energy absorption capability
∙Available in ammo-pack.
LIMITING VALUES
DESCRIPTION |
This package is hermetically sealed |
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Rugged glass package, using a high |
and fatigue free as coefficients of |
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expansion of all used parts are |
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temperature alloyed construction. |
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matched. |
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k |
a |
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MAM047 |
Fig.1 Simplified outline (SOD57) and symbol.
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL |
PARAMETER |
CONDITIONS |
MIN. |
MAX. |
UNIT |
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VRRM |
repetitive peak reverse voltage |
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BYW54 |
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600 |
V |
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BYW55 |
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800 |
V |
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BYW56 |
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1000 |
V |
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VRWM |
crest working reverse voltage |
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BYW54 |
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600 |
V |
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BYW55 |
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800 |
V |
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BYW56 |
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1000 |
V |
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VR |
continuous reverse voltage |
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BYW54 |
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600 |
V |
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BYW55 |
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800 |
V |
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BYW56 |
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1000 |
V |
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IF(AV) |
average forward current |
Ttp = 45 °C; |
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2.0 |
A |
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lead length = 10 mm; |
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averaged over any 20 ms |
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period; see Figs 2 and 4 |
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Tamb = 80 °C; PCB mounting |
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0.8 |
A |
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(see Fig.9); |
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averaged over any 20 ms |
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period; see Figs 3 and 4 |
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IFSM |
non-repetitive peak forward current |
t = 10 ms half sinewave |
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50 |
A |
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ERSM |
non-repetitive peak reverse avalanche |
L = 120 mH; Tj = Tj max prior to |
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20 |
mJ |
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energy |
surge; inductive load switched off |
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Tstg |
storage temperature |
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−65 |
+175 |
°C |
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Tj |
junction temperature |
see Fig.5 |
−65 |
+175 |
°C |
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1996 Jun 11 |
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Philips Semiconductors |
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Product specification |
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Controlled avalanche rectifiers |
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BYW54 to BYW56 |
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ELECTRICAL CHARACTERISTICS |
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Tj = 25 °C; unless otherwise specified. |
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SYMBOL |
PARAMETER |
CONDITIONS |
MIN. |
TYP. |
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MAX. |
UNIT |
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VF |
forward voltage |
IF = 1 A; Tj = Tj max; see Fig.6 |
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0.8 |
V |
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IF = 1 A; see Fig.6 |
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1.0 |
V |
V(BR)R |
reverse avalanche |
IR = 0.1 mA |
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breakdown voltage |
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BYW54 |
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650 |
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V |
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BYW55 |
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900 |
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V |
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BYW56 |
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1100 |
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V |
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IR |
reverse current |
VR = VRRMmax; see Fig.7 |
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1 |
mA |
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VR = VRRMmax; Tj = 165 °C; |
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150 |
mA |
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see Fig.7 |
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trr |
reverse recovery time |
when switched from IF = 0.5 A to |
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3 |
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ms |
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IR = 1 A; measured at IR = 0.25 A; |
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see Fig.10 |
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Cd |
diode capacitance |
VR = 0 V; f = 1 MHz; see Fig.8 |
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50 |
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pF |
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THERMAL CHARACTERISTICS
SYMBOL |
PARAMETER |
CONDITIONS |
VALUE |
UNIT |
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Rth j-tp |
thermal resistance from junction to tie-point |
lead length = 10 mm |
46 |
K/W |
Rth j-a |
thermal resistance from junction to ambient |
note 1 |
100 |
K/W |
Note
1.Device mounted on epoxy-glass printed-circuit board, 1.5 mm thick; thickness of copper ³40 mm, see Fig.9. For more information please refer to the “General Part of Handbook SC01”.
1996 Jun 11 |
3 |
Philips Semiconductors |
Product specification |
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Controlled avalanche rectifiers |
BYW54 to BYW56 |
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GRAPHICAL DATA
MBG044
3 handbook, halfpage
IF(AV)
(A)
2
1
0 |
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0 |
40 |
80 |
120 |
160 |
200 |
Ttp (°C)
Switched mode application.
a = 1.57; VR = VRRMmax; δ = 0.5; lead length 10 mm.
Fig.2 Maximum permissible average forward current as a function of tie-point temperature (including losses due to reverse leakage).
MBG054
1.6 handbook, halfpage
IF(AV)
(A)
1.2
0.8
0.4
0
0 |
40 |
80 |
120 |
160 |
200 |
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Tamb (°C) |
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Switched mode application.
a = 1.57; VR = VRRMmax; δ = 0.5; device mounted as shown in Fig.9.
Fig.3 Maximum permissible average forward current as a function of ambient temperature (including losses due to reverse leakage).
MGC745
4 |
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handbook, halfpage |
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2.5 |
2 |
1.57 1.42 |
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a = 3 |
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IF(AV) (A) |
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a = IF(RMS)/IF(AV); VR = VRRMmax; δ = 0.5. |
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Fig.4 |
Maximum steady state power dissipation |
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(forward plus leakage current losses, |
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excluding switching losses) as a function |
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of average forward current. |
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MBH387
200
Tj (°C)
100
54 55 56
0
0 |
400 |
800 |
VR (V) |
1200 |
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Solid line = VR.
Dotted line = VRRM; δ = 0.5.
Fig.5 Maximum permissible junction temperature as a function of reverse voltage.
1996 Jun 11 |
4 |
Philips Semiconductors |
Product specification |
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Controlled avalanche rectifiers |
BYW54 to BYW56 |
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MGC735
15 handbook, halfpage
IF
(A)
10
5
0
0 |
1 |
2 |
VF (V)
Solid line: Tj = 25 °C.
Dotted line: Tj = Tj max.
Fig.6 Forward current as a function of forward voltage; maximum values.
MGC734
103 handbook, halfpage
IR
(μA)
102
max
10
1
10 −1
0 |
40 |
80 |
120 |
160 |
200 |
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Tj ( C)
VR = VRRMmax.
Fig.7 Reverse current as a function of junction temperature; maximum values.
MBG031
10 2 handbook, halfpage
Cd (pF)
10
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102 |
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1 |
10 |
VR |
(V) |
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f = 1 MHz; Tj = 25 °C.
Fig.8 Diode capacitance as a function of reverse voltage; typical values.
50
handbook, halfpage
25
7 
50
2
3
MGA200
Dimensions in mm.
Fig.9 Device mounted on a printed-circuit board.
1996 Jun 11 |
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