Материал: 9775
DISCRETE SEMICONDUCTORS
M3D176
1N4148; 1N4446; 1N4448
High-speed diodes
Product specification |
1996 Apr 15 |
Supersedes data of April 1992
File under Discrete Semiconductors, SC01
Philips Semiconductors |
Product specification |
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High-speed diodes |
1N4148; 1N4446; 1N4448 |
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FEATURES |
DESCRIPTION |
∙Hermetically sealed leaded glass SOD27 (DO-35) package
∙High switching speed: max. 4 ns
∙General application
∙Continuous reverse voltage: max. 75 V
∙Repetitive peak reverse voltage: max. 75 V
∙Repetitive peak forward current: max. 450 mA
∙Forward voltage: max. 1 V.
APPLICATIONS
∙ High-speed switching.
LIMITING VALUES
The 1N4148, 1N4446, 1N4448 are high-speed switching diodes fabricated in planar technology, and encapsulated in hermetically sealed leaded glass SOD27 (DO-35) packages.
k |
a |
handbook, halfpage |
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MAM246
The diodes are type branded.
Fig.1 Simplified outline (SOD27; DO-35) and symbol.
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL |
PARAMETER |
CONDITIONS |
MIN. |
MAX. |
UNIT |
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VRRM |
repetitive peak reverse voltage |
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− |
75 |
V |
VR |
continuous reverse voltage |
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− |
75 |
V |
IF |
continuous forward current |
see Fig.2; note 1 |
− |
200 |
mA |
IFRM |
repetitive peak forward current |
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− |
450 |
mA |
IFSM |
non-repetitive peak forward current |
square wave; Tj = 25 °C prior to |
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surge; see Fig.4 |
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t = 1 μs |
− |
4 |
A |
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t = 1 ms |
− |
1 |
A |
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t = 1 s |
− |
0.5 |
A |
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Ptot |
total power dissipation |
Tamb = 25 °C; note 1 |
− |
500 |
mW |
Tstg |
storage temperature |
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−65 |
+200 |
°C |
Tj |
junction temperature |
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− |
200 |
°C |
Note
1. Device mounted on an FR4 printed circuit-board; lead length 10 mm.
1996 Apr 15 |
2 |
Philips Semiconductors |
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Product specification |
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High-speed diodes |
1N4148; 1N4446; 1N4448 |
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ELECTRICAL CHARACTERISTICS |
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Tj = 25 °C; unless otherwise specified. |
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SYMBOL |
PARAMETER |
CONDITIONS |
MIN. |
MAX. |
UNIT |
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VF |
forward voltage |
see Fig.3 |
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1N4148 |
IF = 10 mA |
− |
1.0 |
V |
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1N4446 |
IF = 20 mA |
− |
1.0 |
V |
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1N4448 |
IF = 5 mA |
0.62 |
0.72 |
V |
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IF = 100 mA |
− |
1.0 |
V |
IR |
reverse current |
VR = 20 V; see Fig.5 |
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25 |
nA |
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VR = 20 V; Tj = 150 °C; see Fig.5 |
− |
50 |
μA |
IR |
reverse current; 1N4448 |
VR = 20 V; Tj = 100 °C; see Fig.5 |
− |
3 |
μA |
Cd |
diode capacitance |
f = 1 MHz; VR = 0; see Fig.6 |
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4 |
pF |
trr |
reverse recovery time |
when switched from IF = 10 mA to |
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4 |
ns |
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IR = 60 mA; RL = 100 Ω; |
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measured at IR = 1 mA; see Fig.7 |
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Vfr |
forward recovery voltage |
when switched from IF = 50 mA; |
− |
2.5 |
V |
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tr = 20 ns; see Fig.8 |
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THERMAL CHARACTERISTICS
SYMBOL |
PARAMETER |
CONDITIONS |
VALUE |
UNIT |
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Rth j-tp |
thermal resistance from junction to tie-point |
lead length 10 mm |
240 |
K/W |
Rth j-a |
thermal resistance from junction to ambient |
lead length 10 mm; note 1 |
350 |
K/W |
Note
1. Device mounted on a printed circuit-board without metallization pad.
1996 Apr 15 |
3 |
Philips Semiconductors |
Product specification |
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|
High-speed diodes |
1N4148; 1N4446; 1N4448 |
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GRAPHICAL DATA
300 |
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MBG451 |
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handbook, halfpage |
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IF |
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(mA) |
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200 |
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100 |
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0 |
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o |
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0 |
100 |
Tamb |
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C) |
200 |
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Device mounted on an FR4 printed-circuit board; lead length 10 mm.
Fig.2 Maximum permissible continuous forward current as a function of ambient temperature.
MBG464
600 handbook, halfpage
IF (mA)
400
(1) |
(2) |
(3) |
200
0
0 |
1 |
VF |
(V) |
2 |
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(1)Tj = 175 °C; typical values.
(2)Tj = 25 °C; typical values.
(3)Tj = 25 °C; maximum values.
Fig.3 Forward current as a function of forward voltage.
MBG704
102 handbook, full pagewidth
IFSM
(A)
10
1
10−1
1 |
10 |
102 |
103 |
tp (μs) |
104 |
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Based on square wave currents.
Tj = 25 °C prior to surge.
Fig.4 Maximum permissible non-repetitive peak forward current as a function of pulse duration.
1996 Apr 15 |
4 |
Philips Semiconductors |
Product specification |
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High-speed diodes |
1N4148; 1N4446; 1N4448 |
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103 |
MGD290 |
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handbook, halfpage
IR
(μA) 102
(1) (2)
10
1
10−1
10−2
0 |
100 |
200 |
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Tj |
(oC) |
(1)VR = 75 V; typical values.
(2)VR = 20 V; typical values.
Fig.5 Reverse current as a function of junction temperature.
MGD004
1.2 handbook, halfpage
Cd (pF)
1.0
0.8
0.6
0.4
0 |
10 |
VR |
(V) |
20 |
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f = 1 MHz; Tj = 25 °C.
Fig.6 Diode capacitance as a function of reverse voltage; typical values.
1996 Apr 15 |
5 |