Материал: 9482
DISCRETE SEMICONDUCTORS
OM2050
Wideband amplifier module
Product specification |
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1995 Nov 13 |
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File under Discrete Semiconductors, SC16 |
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Philips Semiconductors |
Product specification |
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Wideband amplifier module |
OM2050 |
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DESCRIPTION
A two-stage wideband amplifier in hybrid integrated circuit form on a thin-film substrate. The device is intended -head as an amplifier in RATV and MATV systems.
PINNING |
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PIN |
DESCRIPTION |
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1 |
input |
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2 |
common |
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3 |
common |
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4 |
common |
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5 |
output/supply (+) |
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1 |
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2 |
3 |
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4 |
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5 |
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MGD076 |
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Fig.1 |
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Simplified outline. |
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QUICK REFERENCE DATA |
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SYMBOL |
PARAMETER |
CONDITIONS |
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MIN. |
TYP. |
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MAX. |
UNIT |
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f |
frequency range |
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40 |
- |
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860 |
MHz |
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ZS, ZL |
source and load impedance |
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- |
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75 |
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- |
W |
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GT |
transducer gain = ïS21ï2 |
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- |
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18 |
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- |
dB |
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DGT |
flatness of frequency response |
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- |
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1 |
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- |
dB |
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Vo(rms) |
output voltage (RMS value) |
dim = -60 dB; |
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- |
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100 |
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- |
dBmV |
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3rd order intermodulation (3-tone) |
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F |
noise figure |
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- |
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5.2 |
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- |
dB |
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VB |
DC supply voltage |
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10.8 |
12 |
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13.2 |
V |
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Tamb |
ambient operating temperature |
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-20 |
- |
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+70 |
°C |
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1995 Nov 13 |
2 |
Philips Semiconductors |
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Product specification |
Wideband amplifier module |
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OM2050 |
CIRCUIT DIAGRAM AND PRINTED-CIRCUIT BOARD |
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C2 |
C1 |
R1 |
R4 |
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5 |
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R6 |
1 |
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TR1 |
TR2 |
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R3 |
R8 |
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R5 |
R7 |
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R2 |
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C3 |
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2, 3, 4 |
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MLB139 |
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Fig.2 |
Circuit diagram. |
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TOP VIEW |
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+ |
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L |
75 Ω |
75 Ω |
track |
track |
C |
C |
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MGD055 |
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BOTTOM VIEW |
L > 5 μH; e.g. catalogue No. 3122 108 20150, or 27 turns enamelled 0.3 mm copper wire wound on a ferrite core with a diameter of 1.6 mm. C > 220 pF ceramic capacitor.
Fig.3 Printed-circuit board holes and tracks.
1995 Nov 13 |
3 |
Philips Semiconductors |
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Product specification |
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Wideband amplifier module |
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OM2050 |
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LIMITING VALUES |
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In accordance with the Absolute Maximum Rating System (IEC 134). |
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SYMBOL |
PARAMETER |
MIN. |
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MAX. |
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UNIT |
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Tamb |
ambient operating temperature |
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-20 |
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+70 |
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°C |
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Tstg |
storage temperature |
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-40 |
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+125 |
°C |
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VB |
DC supply voltage |
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15 |
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V |
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PIM |
peak incident powers on pins 1 and 5 |
- |
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100 |
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mW |
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CHARACTERISTICS |
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SYMBOL |
PARAMETER |
CONDITIONS |
MIN. |
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TYP. |
MAX. |
UNIT |
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Measuring conditions |
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Tamb |
ambient operating temperature |
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- |
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25 |
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°C |
VB |
DC supply voltage |
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12 |
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V |
ZS |
source impedance |
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75 |
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W |
ZL |
load impedance |
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75 |
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W |
Z0 |
characteristic impedance of |
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75 |
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W |
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HF connections |
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f |
frequency range |
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40 |
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860 |
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MHz |
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Performance |
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IB |
supply current |
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- |
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18 |
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mA |
GT |
transducer gain = ïS21ï2 |
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18 |
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dB |
DGT |
flatness of frequency response |
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1 |
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dB |
VSWRin |
individual maximum VSWR |
input; note 1 |
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1.5 |
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VSWRout |
individual maximum VSWR |
output; note 1 |
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1.9 |
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ïS12ï2 |
back attenuation |
f = 100 MHz |
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29 |
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dB |
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f = 860 MHz |
- |
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25 |
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dB |
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Vo(rms) |
output voltage (RMS value) |
dim = -60 dB; |
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100 |
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dBmV |
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3rd order intermodulation (3-tone) |
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F |
noise figure |
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5.2 |
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dB |
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Operating conditions |
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Tamb |
ambient operating temperature |
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-20 |
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+70 |
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°C |
VB |
DC supply voltage |
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10.8 |
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12 |
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13.2 |
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V |
f |
frequency range |
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40 |
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860 |
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MHz |
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ZS |
source impedance |
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75 |
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W |
ZL |
load impedance |
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75 |
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W |
Note
1. Highest value (for sample) occurring in the frequency range.
1995 Nov 13 |
4 |
Philips Semiconductors |
Product specification |
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Wideband amplifier module |
OM2050 |
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MGD056
20
G T (dB)
19
18
typ
17
16
15
0 |
200 |
400 |
600 |
800 |
1000 |
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f (MHz) |
Gain over entire frequency range.
Z0 = 75 Ω.
Fig.4 Transducer gain as a function of frequency.
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MGD057 |
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110 |
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40 |
handbook, halfpage |
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IB |
Vo(rms) |
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(dBμV) |
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(mA) |
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100 |
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V |
o(rms) |
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30 |
90 |
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20 |
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IB |
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80 |
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10 |
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10 |
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5 |
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15 |
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VB (V) |
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Fig.5 Output voltage and supply current as a function of supply voltage; typical values.
MGD058
2.5 |
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handbook, halfpage |
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GT |
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(dB) |
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0 |
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−2.5 |
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(1) |
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(2) |
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−5.0 |
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(3) |
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−7.5 |
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−10.0 |
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−12.5 |
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10 |
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5 |
15 |
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VB (V) |
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Reference 0 dB at 12 V.
(1)f = 100 MHz.
(2)f = 500 MHz.
(3)f = 860 MHz.
Fig.6 Variation of transducer gain as a function of supply voltage; typical values.
1995 Nov 13 |
5 |