Материал: 9193
Philips Semiconductors |
Product specification |
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Silicon Diffused Power Transistor |
BUW14 |
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GENERAL DESCRIPTION
High-voltage, high-speed, glass passivated npn power transistor in a SOT82 envelope intended for use in converters, inverters, switching regulators, motor control systems and switching applications.
QUICK REFERENCE DATA
SYMBOL |
PARAMETER |
CONDITIONS |
TYP. |
MAX. |
UNIT |
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VCESM |
Collector-emitter voltage peak value |
VBE = 0 V |
- |
1000 |
V |
VCEO |
Collector-emitter voltage (open base) |
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450 |
V |
IC |
Collector current (DC) |
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- |
0.5 |
A |
ICM |
Collector current peak value |
Tmb ≤ 60 ˚C |
- |
1 |
A |
Ptot |
Total power dissipation |
- |
20 |
W |
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tf |
Fall time |
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0.4 |
- |
μs |
PINNING - SOT82 |
PIN CONFIGURATION |
SYMBOL |
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PIN |
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DESCRIPTION |
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c |
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1 |
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emitter |
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2 |
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collector |
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b |
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3 |
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base |
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3 |
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e |
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LIMITING VALUES |
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Limiting values in accordance with the Absolute Maximum Rating System (IEC 134) |
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SYMBOL |
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PARAMETER |
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CONDITIONS |
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MIN. |
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MAX. |
UNIT |
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VCESM |
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Collector-emitter voltage peak value |
VBE = 0 V |
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- |
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1000 |
V |
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VCEO |
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Collector-emitter voltage (open base) |
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- |
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450 |
V |
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IC |
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Collector current (DC) |
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0.5 |
A |
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ICM |
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Collector current peak value |
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1 |
A |
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IB |
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Base current (DC) |
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0.2 |
A |
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IBM |
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Base current peak value |
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0.3 |
A |
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-I |
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Reverse base current peak value 1 |
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0.3 |
A |
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BM |
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Tmb ≤ 60 ˚C |
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Ptot |
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Total power dissipation |
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20 |
W |
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Tstg |
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Storage temperature |
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-65 |
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150 |
˚C |
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Tj |
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Junction temperature |
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150 |
˚C |
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THERMAL RESISTANCES |
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SYMBOL |
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PARAMETER |
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CONDITIONS |
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TYP. |
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MAX. |
UNIT |
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Rth j-mb |
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Junction to mounting base |
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- |
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4.5 |
K/W |
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Rth j-a |
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Junction to ambient |
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in free air |
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100 |
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K/W |
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1 Turn-off current.
March 1992 |
1 |
Rev 1.000 |
Philips Semiconductors |
Product specification |
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Silicon Diffused Power Transistor |
BUW14 |
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STATIC CHARACTERISTICS
Tmb = 25 ˚C unless otherwise specified
SYMBOL |
PARAMETER |
CONDITIONS |
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MIN. |
TYP. |
MAX. |
UNIT |
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I |
Collector cut-off current 2 |
V = |
0 |
V; V |
CE |
= V |
CESMmax |
- |
- |
100 |
μA |
CES |
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BE |
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ICES |
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VBE = |
0 |
V; VCE = VCESMmax; |
- |
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1.0 |
mA |
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Tj = 125 ˚C |
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IEBO |
Emitter cut-off current |
VEB = |
5 |
V; IC = 0 A |
- |
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1.0 |
mA |
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VCEOsust |
Collector-emitter sustaining voltage |
IB = 0 A; IC = 100 mA; |
450 |
- |
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V |
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L = 25 mH |
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VCEsat |
Collector-emitter saturation voltages |
IC = 0.1 A; IB = 10 mA |
- |
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0.8 |
V |
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VCEsat |
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IC = 0.2 A; IB = 20 mA |
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1.0 |
V |
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VBEsat |
Base-emitter saturation voltage |
IC = 0.2 A; IB = 20 mA |
- |
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1.0 |
V |
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hFE |
DC current gain |
IC = 50 mA; VCE = 5 V |
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50 |
- |
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hFE |
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IC = 300 mA; VCE = 5 V |
25 |
50 |
100 |
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DYNAMIC CHARACTERISTICS
Tmb = 25 ˚C unless otherwise specified
SYMBOL |
PARAMETER |
CONDITIONS |
TYP. |
MAX. |
UNIT |
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fT |
Transition frequency |
IC = 0.2 A; VCE = 10 V; f = 1 MHz |
20 |
- |
MHz |
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Switching times (resistive load circuit) |
ICon = 0.2 A; IBon = 20 mA; |
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ton |
Turn-on time |
-IBoff = 40 mA; VCC = 250 V |
0.4 |
0.7 |
μs |
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ts |
Turn-off storage time |
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3.5 |
5.0 |
μs |
tf |
Turn-off fall time |
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0.4 |
- |
μs |
tf |
Turn-off fall time |
Tmb = 95 ˚C |
- |
1.3 |
μs |
+ 50v 100-200R
Horizontal
Oscilloscope
Vertical
300R |
1R |
6V
30-60 Hz
Fig.1. Test circuit for VCEOsust.
IC / mA
250 
200 
100 
0
VCE / V |
min |
VCEOsust
Fig.2. Oscilloscope display for VCEOsust.
2 Measured with half sine-wave voltage (curve tracer).
March 1992 |
2 |
Rev 1.000 |
Philips Semiconductors |
Product specification |
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Silicon Diffused Power Transistor |
BUW14 |
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VCC |
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RL |
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VIM |
RB |
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0 |
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T.U.T. |
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tp |
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T |
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Fig.3. |
Test circuit resistive load. VIM = -6 to +8 V |
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VCC = 150 V; tp = 20 ms; d = tp / T = 0.01. |
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RB and RL calculated from ICon and IBon requirements. |
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90 % |
ICon |
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90 % |
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IC |
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10 % |
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ts |
ton |
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tf |
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toff |
IB |
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IBon |
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10 % |
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tr |
30ns |
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-IBoff |
Fig.4. Switching times waveforms with resistive load.
120 |
PD% |
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Normalised Power Derating |
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110 |
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100 |
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90 |
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80 |
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70 |
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60 |
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50 |
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40 |
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30 |
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20 |
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10 |
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0 |
0 |
20 |
40 |
60 |
80 |
100 |
120 |
140 |
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Tmb / |
C |
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Fig.5. |
Normalised power dissipation. |
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PD% = 100×PD/PD 25˚C = f (Tmb) |
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hFE |
BUW14 |
1000 |
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100 |
5V |
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1V |
10 |
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Tj = 25 C |
Tj = 125 C
1 |
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0.01 |
0.1 |
1 |
IC / A
Fig.6. Typical DC current gain. hFE = f(IC) parameter VCE
VCESAT / V |
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BUW14 |
10 |
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Tj = 25 C |
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0.2 A |
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Tj = 125 C |
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1 |
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0.1 A |
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0.1 |
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IC=0.05 A |
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0.01 |
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1.0 |
0.001 |
0.01 |
0.1 |
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IB / A |
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Fig.7. Typical collector-emitter saturation voltage. VCEsat = f(IB); parameter IC
VBESAT / V |
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BUW14 |
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1 |
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Tj = 25 C |
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0.9 |
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Tj = 125 C |
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0.8 |
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0.7 |
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0.6 |
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IC= |
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0.5 |
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50 mA |
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100 mA |
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200 mA |
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0.4 |
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0 |
0.04 |
0.08 |
0.12 |
0.16 |
0.2 |
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IB / A |
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Fig.8. Typical base-emitter saturation voltage. VBEsat = f(IB); parameter IC
March 1992 |
3 |
Rev 1.000 |
Philips Semiconductors |
Product specification |
|
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Silicon Diffused Power Transistor |
BUW14 |
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Fig.9. Forward bias safe operating area.
(1)Ptot max line.
(2)Second-breakdown limits.
I Region of permissible DC operation.
IIPermissible extension for repetitive pulse operation.
IIIArea of permissible operation during turn-on in single transistor converters, provided
≤100 Ω and tp ≤ 0.6 μs.RBE
IV Repetitive pulse operation in this region is permissible provided VBE ≤ 0 and tp ≤ 2 ms.
Fig.10. Transient thermal impedance.
Zth j-mb = f(t); parameter δ = duty cycle.
March 1992 |
4 |
Rev 1.000 |
Philips Semiconductors |
Product specification |
|
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Silicon Diffused Power Transistor |
BUW14 |
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MECHANICAL DATA
Dimensions in mm
Net Mass: 0.8 g
mounting |
2.8 |
7.8 |
base |
2.3 |
max |
3.1 |
3.75 |
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2.5 |
11.1 |
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max |
1)
2.54
max
1.2
15.3 min
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2 |
3 |
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0.5 |
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4.58 |
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2.29 |
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0.88 |
1) Lead dimensions within this |
max |
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zone uncontrolled. |
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Fig.11. SOT82; pin 2 connected to mounting base.
Notes
1.Refer to mounting instructions for SOT82 envelopes.
2.Epoxy meets UL94 V0 at 1/8".
March 1992 |
5 |
Rev 1.000 |