Материал: 9006
DISCRETE SEMICONDUCTORS
book, halfpage
M3D050
BAS45A
Low-leakage diode
Product specification |
1996 Mar 13 |
Supersedes data of June 1994
File under Discrete Semiconductors, SC01
Philips Semiconductors |
Product specification |
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Low-leakage diode |
BAS45A |
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FEATURES |
DESCRIPTION |
∙Continuous reverse voltage: max. 125 V
∙Repetitive peak forward current: max. 625 mA
∙Low reverse current: max. 1 nA
∙Switching time: typ. 1.5 μs.
APPLICATION
∙ Low leakage current applications.
LIMITING VALUES
Epitaxial medium-speed switching diode with a low leakage current in a hermetically-sealed glass SOD68 (DO-34) package.
k |
a |
handbook, halfpage |
MAM156
Fig.1 Simplified outline (SOD68; DO-34) and symbol.
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL |
PARAMETER |
CONDITIONS |
MIN. |
MAX. |
UNIT |
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VRRM |
repetitive peak reverse voltage |
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125 |
V |
VR |
continuous reverse voltage |
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125 |
V |
IF |
continuous forward current |
see Fig.2; note 1 |
− |
250 |
mA |
IFRM |
repetitive peak forward current |
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625 |
mA |
IFSM |
non-repetitive peak forward current |
square wave; Tj = 25 °C prior to |
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surge; see Fig.4 |
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tp = 1 μs |
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4 |
A |
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tp = 1 ms |
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1 |
A |
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tp = 1 s |
− |
0.5 |
A |
Ptot |
total power dissipation |
Tamb = 25 °C |
− |
300 |
mW |
Tstg |
storage temperature |
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−65 |
+175 |
°C |
Tj |
junction temperature |
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175 |
°C |
Note
1. Device mounted on a printed-circuit board without metallization pad.
1996 Mar 13 |
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Philips Semiconductors |
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Product specification |
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Low-leakage diode |
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BAS45A |
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ELECTRICAL CHARACTERISTICS |
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Tj = 25 °C unless otherwise specified. |
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SYMBOL |
PARAMETER |
CONDITIONS |
TYP. |
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MAX. |
UNIT |
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VF |
forward voltage |
see Fig.3 |
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IF = 1 mA |
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780 |
mV |
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IF = 10 mA |
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860 |
mV |
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IF = 100 mA |
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1000 |
mV |
IR |
reverse current |
see Fig.5 |
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VR = 125 V; Emax = 100 lx |
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1 |
nA |
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VR = 30 V; Tj = 125 °C; Emax = 100 lx |
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300 |
nA |
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VR = 125 V; Tj = 125 °C; Emax = 100 lx |
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500 |
nA |
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VR = 125 V; Tj = 150 °C; Emax = 100 lx |
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2 |
μA |
Cd |
diode capacitance |
f = 1 MHz; VR = 0; see Fig.6 |
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4 |
pF |
trr |
reverse recovery time |
when switched from IF = 10 mA to |
1.5 |
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μs |
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IR = 10 mA; RL = 100 Ω; measured at |
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IR = 1 mA; see Fig.7 |
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THERMAL CHARACTERISTICS
SYMBOL |
PARAMETER |
CONDITIONS |
VALUE |
UNIT |
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Rth j-tp |
thermal resistance from junction to tie-point |
8 mm from the body |
300 |
K/W |
Rth j-a |
thermal resistance from junction to ambient |
lead length 10 mm; note 1 |
500 |
K/W |
Note
1. Device mounted on a printed-circuit board without metallization pad.
1996 Mar 13 |
3 |
Philips Semiconductors |
Product specification |
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Low-leakage diode |
BAS45A |
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GRAPHICAL DATA |
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300 |
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MBG522 |
300 |
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MBG523 |
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handbook, halfpage |
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handbook, halfpage |
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IF |
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IF |
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(mA) |
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(mA) |
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(1) |
(2) |
(3) |
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200 |
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200 |
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100 |
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100 |
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0 |
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0 |
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0 |
100 |
C) |
200 |
0 |
0.5 |
1.0 |
VF (V) |
1.5 |
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Tamb ( |
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(1) |
Tj = 150 °C; typical values. |
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(2) |
Tj = 25 |
°C; typical values. |
Device mounted on a printed-circuit board without metallization pad. |
(3) |
Tj = 25 |
°C; maximum values. |
Fig.2 Maximum permissible continuous forward |
Fig.3 Forward current as a function of forward |
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current as a function of ambient temperature. |
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voltage. |
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MBG704
102
IFSM
(A)
10
1
10−1
1 |
10 |
102 |
103 |
tp (μs) |
104 |
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Based on square wave currents;Tj = 25 °C prior to surge.
Fig.4 Maximum permissible non-repetitive peak forward current as a function of pulse duration.
1996 Mar 13 |
4 |
Philips Semiconductors |
Product specification |
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Low-leakage diode |
BAS45A |
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10 |
4 |
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MBD456 |
3 |
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MBG524 |
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handbook, halfpage |
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handbook, halfpage |
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I R |
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Cd |
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(nA) |
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(pF) |
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103 |
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max |
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2 |
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102 |
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1 |
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1 |
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10 1 |
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0 |
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0 |
50 |
100 |
T j (oC) |
150 |
0 |
5 |
10 |
15 |
VR (V) 20 |
VR = 125 V. |
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f = 1 MHz; Tj = 25 °C. |
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Fig.5 Reverse current as a function of junction |
Fig.6 Diode capacitance as a function of reverse |
temperature. |
voltage; typical values. |
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t r |
t p |
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t |
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D.U.T. |
10% |
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R |
= 50 Ω |
IF |
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I F |
t rr |
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S |
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SAMPLING |
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t |
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OSCILLOSCOPE |
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V = VR |
IF x R S |
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R i = 50 Ω |
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90% |
(1) |
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VR |
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MGA881 |
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input signal |
output signal |
Fig.7 Reverse recovery time test circuit and waveforms.
1996 Mar 13 |
5 |