Материал: 2N3791RE
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by 2N3791/D
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2N3791 |
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Silicon PNP Power Transistors |
2N3792 |
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. . . designed for medium±speed switching and amplifier applications. These devices |
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feature: |
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10 AMPERE |
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• Total Switching Time @ 3.0 A [1.0 μs (typ) |
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• hFE (min) = 50 @ 1.0 A |
POWER TRANSISTORS |
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• Low VCE(sat) = 0.5 V (typ) @ IC = 5.0 A, IB = 0.5 A |
PNP SILICON |
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• Excellent Safe Area Limits |
60 ± 80 VOLTS |
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• Complementary NPN available Ð 2N3716 |
150 WATTS |
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CASE 1±07 TO±204AA (TO±3)
MAXIMUM RATINGS
Rating |
Symbol |
2N3791 |
2N3792 |
Unit |
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Collector±Base Voltage |
VCB |
60 |
80 |
Volts |
Collector±Emitter Voltage |
VCEO |
60 |
80 |
Volts |
Emitter±Base Voltage |
VEB |
7.0 |
7.0 |
Volts |
Collector Current (Continuous) |
IC |
10 |
10 |
Amps |
Base Current (Continuous) |
IB |
4.0 |
4.0 |
Amps |
Power Dissipation |
PD |
150 |
150 |
Watts |
Thermal Resistance |
θJC |
1.17 |
1.17 |
_C/W |
Junction Operating and Storage Temperature Range |
TJ, Tstg |
± 65 to +200 |
_C |
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160 |
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(WATTS) |
140 |
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120 |
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DISSIPATION |
100 |
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80 |
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60 |
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, POWER |
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40 |
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D |
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P |
20 |
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0 |
25 |
50 |
75 |
100 |
125 |
150 |
175 |
200 |
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0 |
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TC, CASE TEMPERATURE (°C) |
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Figure 1. Power±Temperature Derating Curve
Safe Area Limits are indicated by Figures 15, 16. Both limits are applicable and must be observed.
REV 7
Motorola, Inc. 1995
2N3791 |
2N3792 |
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ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) |
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Characteristic |
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Symbol |
Min |
Max |
Unit |
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Collector±Emitter Sustaining Voltage (1) |
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VCEO(sus) |
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Vdc |
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(IC = 200 mAdc, IB = 0) |
2N3791 |
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60 |
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2N3792 |
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80 |
Ð |
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Collector±Emitter Cutoff Current |
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ICEX |
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mAdc |
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(VCE = 60 Vdc, VBE = ± 1.5 Vdc) |
2N3791 |
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Ð |
1.0 |
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(VCE = 80 Vdc, VBE = ± 1.5 Vdc) |
2N3792 |
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Ð |
1.0 |
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(VCE = 60 Vdc, VBE = ± 1.5 Vdc, TC = 150_C) |
2N3791 |
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Ð |
5.0 |
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(VCE = 80 Vdc, VBE = ± 1.5 Vdc, TC = 150_C) |
2N3792 |
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Ð |
5.0 |
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Emitter±Base Cutoff Current |
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IEBO |
Ð |
5.0 |
mAdc |
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(VEB = 7.0 Vdc) |
All Types |
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DC Current Gain (1) |
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hFE |
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Ð |
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(IC = 1.0 Adc, VCE = 2.0 Vdc) |
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50 |
180 |
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(IC = 3.0 Adc, VCE = 2.0 Vdc) |
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30 |
Ð |
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Collector±Emitter Saturation Voltage (1) |
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VCE(sat) |
Ð |
1.0 |
Vdc |
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(IC = 5.0 Adc, IB = 0.5 Adc) |
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Base±Emitter On Voltage (1) |
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VBE(on) |
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Vdc |
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(IC = 5.0 A, VCE = 2.0 Vdc) |
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Ð |
1.8 |
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(IC = 10 Adc, VCE = 4.0 Vdc) |
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Ð |
4.0 |
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Current±Gain Ð Bandwidth Product |
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fT |
4.0 |
Ð |
MHz |
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(VCE = 10 Vdc, IC = 0.5 Adc, f = 1.0 MHz) |
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(1) Pulse Test: Pulse Width v 300 μs, Duty Cycle v 2.0%. |
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1.0 |
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1.7 ms |
6.7 ms |
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VALUES SHOWN FOR |
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IC = 5 A, IB1 = ± IB2 = 0.5 A |
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+ 9 V |
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f ≈ 150 cps, DUTY CYCLE ≈ 2% |
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(μs) |
0.7 |
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ts |
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WAVE SHAPE |
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± 30 V |
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TIMES |
0.5 |
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±11.5 V |
AT POINT A |
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ton ≈ 30 μs |
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SWITCHING |
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6 Ω |
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100 Ω |
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20 Ω |
4 W |
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tf |
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1 W |
A |
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1 W |
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0.3 |
|IB1 = ± IB2| = IC/10 |
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900 Ω |
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VCC = 30 V |
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tr |
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Hg RELAYS |
900 Ω |
UNIT |
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TC = 25°C |
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UNDER |
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0.2 |
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+ 9 V |
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TEST |
100 Ω |
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0.2 |
0.3 |
0.5 |
0.7 |
1.0 |
2.0 |
3.0 |
5.0 |
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+ 4 V |
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0.1 |
± 62 V |
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100 Ω |
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IC, COLLECTOR CURRENT (AMPS) |
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Figure 2. Typical Switching Times and Test Circuit
2 |
Motorola Bipolar Power Transistor Device Data |
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2N3791 |
2N3792 |
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500 |
2N3791, 2N3792 |
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300 |
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VCE = 2 V |
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TJ = +175°C |
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200 |
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hFE + |
IC ± ICBO |
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GAIN |
TJ = + 25°C |
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IB ) ICBO |
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TJ = ± 40°C |
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CURRENT |
100 |
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70 |
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TJ = + 25°C |
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50 |
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, DC |
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FE |
30 |
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h |
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TJ = +175°C |
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20 |
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10 |
0.02 |
0.03 |
0.05 |
0.07 |
0.1 |
0.2 |
0.3 |
0.5 |
0.7 |
1.0 |
2.0 |
3.0 |
5.0 |
7.0 |
10 |
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0.01 |
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IC, COLLECTOR CURRENT (AMPS)
Figure 3. Current Gain Variations
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2.4 |
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+ 5.0 |
, SATURATION VOLTAGE (VOLTS) |
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ALL TYPES |
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COEFFICIENT (mV/ °C) |
+ 4.0 |
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2.0 |
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TJ = + 25°C |
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βF = IC/IB (FORCED GAIN) |
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+ 3.0 |
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1.6 |
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VCE = 2 V |
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+ 2.0 |
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1.2 |
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βF = 10 |
+ 1.0 |
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0.8 |
VBE(sat) |
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0 |
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0.4 |
VBE |
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βF = 10 |
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± 1.0 |
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(sat) |
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TEMPERATURE |
± 2.0 |
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VCE(sat) |
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V |
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0 |
0.2 |
0.3 |
0.5 |
0.7 |
1.0 |
2.0 |
3.0 |
5.0 |
7.0 |
10 |
± 3.0 |
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0.1 |
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IC, COLLECTOR CURRENT (AMPS) |
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To compute saturation voltages |
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TJ (+100°C to +175°C) |
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V_(sat) @ operating TJ = V_(sat) |
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@ + 25°C + θv_ (operating TJ ± 25°C) |
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Use appropriate θv for voltage of interest. |
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Use appropriate curve for temperature range of interest. |
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θv = Temperatur ecoefficient |
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TJ (+ 25°C to +100°C) |
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θVC for VCE(sat) |
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TJ (±40°C to +25°C) |
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θVB for VBE(sat) |
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ALL TYPES |
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0 |
1.0 |
2.0 |
3.0 |
4.0 |
5.0 |
6.0 |
7.0 |
8.0 |
9.0 |
10 |
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IC, COLLECTOR CURRENT (AMPS) |
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Figure 4. Saturation Voltages |
Figure 5. Temperature Coefficients |
Motorola Bipolar Power Transistor Device Data |
3 |
2N3791 2N3792
IC, COLLECTOR CURRENT (AMPS)
10
7
5
3
2
1
0.7
0.5
0.3
0.2
0.1
0
SAFE OPERATING AREAS
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10 |
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(AMPS) |
7 |
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DC to 5 ms |
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250 |
μs |
5 |
DC to 5 ms |
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250 |
μs |
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1 ms |
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CURRENT |
3 |
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50 |
s |
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≤ 50 μs |
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2 |
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1 ms |
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500 μs |
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500 μs |
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1 |
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≤ |
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μ |
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COLLECTOR |
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0.3 |
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0.7 |
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0.5 |
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C |
0.2 |
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I |
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10 |
20 |
30 |
40 |
50 |
60 |
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70 |
0.1 |
10 |
20 |
30 |
40 |
50 |
60 |
70 |
80 |
90 |
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0 |
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VCE, COLLECTOR±EMITTER VOLTAGE (VOLTS) |
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VCE, COLLECTOR±EMITTER VOLTAGE (VOLTS) |
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Figure 6. 2N3789, 2N3791 |
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Figure 7. 2N3790, 2N3792 |
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The Safe Operating Area Curves indicate IC ± VCE limits below which the device will not go into secondary breakdown. Collector load lines for specific circuits must fall within the applicable Safe Area to avoid causing a collector±emitter
short. (Duty cycle of the excursions make no significant change in these safe areas.) To insure operation below the maximum TJ, the power±temperature derating curve must be observed for both steady state and pulse power conditions.
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5.0 |
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(mA) |
2.0 |
VCE = VCEO ± 20 V |
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CURRENT |
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1.0 |
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0.5 |
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, COLLECTOR |
0.2 |
TJ = +175°C |
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0.1 |
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0.05 |
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C |
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TJ = +100°C |
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I |
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0.02 |
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0.01 |
REVERSE |
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FORWARD |
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+ 0.4 |
+ 0.2 |
0 |
± 0.2 |
± 0.4 |
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+ 0.6 |
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VBE, BASE±EMITTER VOLTAGE (VOLTS)
Figure 8. Cut±Off Region Transconductance
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20 |
VCE = VCEO ± 20 V |
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10 |
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(mA) |
5.0 |
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CURRENT |
2.0 |
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TJ = +175°C |
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1.0 |
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0.5 |
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,COLLECTOR |
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0.2 |
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TJ = +100°C |
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0.1 |
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0.05 |
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C |
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0.02 |
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0.01 |
10 |
100 |
1K |
10K |
100K |
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1.0 |
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RBE, EXTERNAL BASE±EMITTER RESISTANCE (OHMS) |
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Figure 9. Collector Cut±Off Current versus
Base±Emitter Resistance
4 |
Motorola Bipolar Power Transistor Device Data |
2N3791 2N3792
PACKAGE DIMENSIONS
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A |
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N |
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NOTES: |
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C |
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1. DIMENSIONING AND TOLERANCING PER ANSI |
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Y14.5M, 1982. |
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±T± |
SEATING |
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2. CONTROLLING DIMENSION: INCH. |
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E |
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PLANE |
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3. ALL RULES AND NOTES ASSOCIATED WITH |
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REFERENCED TO±204AA OUTLINE SHALL APPLY. |
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D 2 PL |
K |
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INCHES |
MILLIMETERS |
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0.13 (0.005) M |
T |
Q |
M |
Y |
M |
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DIM |
MIN |
MAX |
MIN |
MAX |
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U |
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A |
1.550 REF |
39.37 REF |
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±Y± |
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B |
±±± |
1.050 |
±±± |
26.67 |
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V |
L |
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C |
0.250 |
0.335 |
6.35 |
8.51 |
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2 |
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D |
0.038 |
0.043 |
0.97 |
1.09 |
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B |
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E |
0.055 |
0.070 |
1.40 |
1.77 |
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H |
G |
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G |
0.430 BSC |
10.92 BSC |
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1 |
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H |
0.215 BSC |
5.46 BSC |
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K |
0.440 |
0.480 |
11.18 |
12.19 |
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L |
0.665 BSC |
16.89 BSC |
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±Q± |
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N |
±±± |
0.830 |
±±± |
21.08 |
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0.13 (0.005) M |
T |
Y |
M |
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Q |
0.151 |
0.165 |
3.84 |
4.19 |
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U |
1.187 BSC |
30.15 BSC |
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V |
0.131 |
0.188 |
3.33 |
4.77 |
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STYLE 1: |
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PIN 1. BASE |
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2. EMITTER |
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CASE: COLLECTOR |
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CASE 1±07
TO±204AA (TO±3)
ISSUE Z
Motorola Bipolar Power Transistor Device Data |
5 |