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MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Order this document by MMQA5V6T1/D

5.6 Volt SC 59 Quad Monolithic

Common Anode

MMQA5V6T1

MMQA20VT1

Motorola Preferred Devices

Transient Voltage Suppressor for ESD Protection

This quad monolithic silicon voltage suppressor is designed for applications requiring transient overvoltage protection capability. It is intended for use in voltage and ESD sensitive equipment such as computers, printers, business machines, communication systems, medical equipment, and other applications. Its quad junction common anode design protects four separate lines using only one package. These devices are ideal for situations where board space is at a premium.

Specification Features:

SC-59 Package Allows Four Separate Unidirectional Configurations

Peak Power Ð 24 Watts @ 1.0 ms (Unidirectional), per Figure 7 Waveform

Maximum Clamping Voltage @ Peak Pulse Current

Low Leakage < 2.0 μA

ESD Rating of Class N (exceeding 16 kV) per the Human Body Model

SC-59 QUAD

TRANSIENT VOLTAGE

SUPPRESSOR

5.6 VOLTS (4)

24 WATTS PEAK POWER

6 5

4

1 2 3

CASE 318F-01

STYLE 1

SC-59 PLASTIC

Mechanical Characteristics:

Void Free, Transfer-Molded, Thermosetting Plastic Case

Corrosion Resistant Finish, Easily Solderable

Package Designed for Optimal Automated Board Assembly

Small Package Size for High Density Applications

Available in 8 mm Tape and Reel

Use the Device Number to order the 7 inch/3,000 unit reel. Replace with ªT3º in the Device Number to order the 13 inch/10,000 unit reel.

THERMAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

1

 

3

2

4

5

6

 

PIN 1. CATHODE

2.ANODE

3.CATHODE

4.CATHODE

5.ANODE

6.CATHODE

Characteristic

Symbol

Value

Unit

 

 

 

 

Peak Power Dissipation @ 1.0 ms (1)

Ppk

24

Watts

@ TA 25°C

 

 

 

Total Power Dissipation on FR-5 Board (2) @ TA = 25°C

°PD°

°225

°mW°

Derate above 25°C

 

1.8

mW/°C

 

 

 

 

Thermal Resistance Junction to Ambient

RθJA

556

°C/W

Total Power Dissipation on Alumina Substrate (3) @ TA = 25°C

°PD°

°300

°mW

Derate above 25°C

 

2.4

mW/°C

 

 

 

 

Thermal Resistance Junction to Ambient

RθJA

417

°C/W

Junction and Storage Temperature Range

TJ

°± 55 to +150°

°C

 

Tstg

 

 

Lead Solder Temperature Ð Maximum (10 Second Duration)

TL

260

°C

1.Non-repetitive current pulse per Figure 7 and derate above TA = 25°C per Figure 8.

2.FR-5 = 1.0 x 0.75 x 0.62 in.

3.Alumina = 0.4 x 0.3 x 0.024 in., 99.5% alumina

4.Other voltages are available

Thermal Clad is a trademark of the Bergquist Company

Preferred devices are Motorola recommended choices for future use and best overall value.

Rev 3

Motorola, Inc. 1996

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

UNIDIRECTIONAL (Circuit tied to pins 1, 2, and 5; Pins 2, 3, and 5; Pins 2, 4, and 5; or Pins 2, 5, and 6) (VF = 0.9 V Max @ IF = 10 mA)

 

Breakdown Voltage

Max Reverse

Max Zener Impedance (5)

Max

Max Reverse

Maximum

 

Leakage Current

Voltage @

 

 

 

 

 

 

Reverse

 

 

 

 

 

 

 

 

IRSM(4)

Temperature

 

 

 

 

 

 

 

 

Surge

 

 

VZT(3)

 

 

 

 

 

(Clamping

Coefficient of

 

 

 

 

IR @ VR

ZZT @ IZT

Current

 

 

(V)

 

@ I ZT

Voltage)

VZ

 

 

 

IRSM(4)

 

 

 

 

(mA)

(μA)

(V)

(Ω) (mA)

VRSM

(mV/°C)

 

 

 

 

Min

 

Nom

Max

1

 

 

 

(A)

(V)

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

5.32

 

5.6

5.88

1.0

2.0

3.0

400

3.0

8.0

1.26

 

 

 

 

 

 

 

 

 

 

 

19

 

20

21

1.0

0.1

15

125

0.84

28.6

20.07

 

 

 

 

 

 

 

 

 

 

 

(3)VZ measured at pulse test current IT at an ambient temperature of 25°C.

(4)Surge current waveform per Figure 5 and derate per Figure 6.

(5)ZZT is measured by dividing the AC voltage drop across the device by the AC current supplied. The specfied limits are IZ(AC) = 0.1 IZ(DC), with AC frequency = 1 kHz.

 

 

 

 

 

Typical Characteristics

 

 

 

 

8

VZ @ IT

 

 

 

23

 

 

 

(VOLTS)

 

 

 

(VOLTS)

 

 

MMQA20VT1

 

 

 

 

MMQA5V6T1

22

 

 

 

7

 

 

 

 

 

 

 

 

 

 

 

 

 

VOLTAGE

 

 

 

 

VOLTAGE

21

 

 

 

6

 

 

 

20

 

 

 

, BREAKDOWN

 

 

 

, BREAKDOWN

 

 

 

 

 

 

 

19

 

UNIDIRECTIONAL

 

 

 

 

 

 

 

 

5

 

 

 

 

 

 

 

 

 

 

 

18

 

 

 

Z

 

 

 

 

Z

 

 

 

V

 

 

 

 

V

 

 

 

 

 

4

0

50

100

150

17

0

25

150

 

± 50

± 40

 

 

TA, AMBIENT TEMPERATURE (°C)

 

 

TA, AMBIENT TEMPERATURE (°C)

 

Figure 1. Typical Breakdown Voltage

Figure 2. Typical Breakdown Voltage

versus Temperature

versus Temperature

 

10000

 

 

 

 

CURRENT (nA)

 

 

 

 

 

REVERSE LEAKAGE

1000

 

 

 

 

 

 

 

 

 

R,

 

 

 

 

I

 

 

 

 

 

 

100

0

50

100

150

 

± 50

 

 

TA, AMBIENT TEMPERATURE (°C)

 

Figure 3. Typical Leakage Current

versus Temperature

 

70

 

 

 

 

 

 

 

 

 

60

 

 

 

 

 

 

 

 

(pF)

50

 

 

 

 

 

MMQA20VT1

 

 

 

 

 

 

 

 

 

 

 

C, CAPACITANCE

40

 

 

 

 

 

 

 

 

30

 

 

 

 

UNIDIRECTIONAL

 

20

 

 

 

 

 

 

 

 

 

10

 

 

 

 

 

 

 

 

 

0

2

4

6

8

10

12

14

16

 

0

REVERSE VOLTAGE (V)

Figure 4. Typical Capacitance versus

Reverse Voltage

MOTOROLA

MMQA5V6T1 MMQA20VT1

2

 

 

 

 

 

 

Typical Characteristics

 

 

 

 

 

 

 

 

300

 

 

 

 

 

 

300

 

 

 

 

 

 

 

 

275

 

 

 

 

 

 

 

 

 

 

 

 

 

 

(pF)

250

 

 

 

MMQA5V6T1

(mW)

250

 

 

 

 

 

 

 

225

 

 

 

 

 

 

 

 

ALUMINA SUBSTRATE

 

 

 

 

 

 

 

 

 

 

 

 

 

 

CAPACITANCEC,

200

 

 

 

UNIDIRECTIONAL

DISSIPATIONPOWER

200

 

 

 

 

 

 

 

175

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

150

 

 

 

 

 

 

150

 

 

 

 

 

 

 

 

125

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

100

 

 

 

 

 

 

100

 

 

 

 

 

 

 

 

75

 

 

 

 

 

 

 

 

FR-5 BOARD

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

50

 

 

 

 

 

,

50

 

 

 

 

 

 

 

 

 

 

 

 

 

D

 

 

 

 

 

 

 

 

25

 

 

 

 

 

P

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

0

0.5

1

1.5

2

2.5

3

0

25

50

75

100

125

150

175

 

0

0

 

 

 

REVERSE VOLTAGE (V)

 

 

 

 

TA, AMBIENT TEMPERATURE (°C)

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Figure 5. Typical Capacitance versus

Figure 6. Steady State Power Derating Curve

Reverse Voltage

 

 

 

 

PULSE WIDTH (tP) IS DEFINED

POWER

 

 

tr

 

 

AS THAT POINT WHERE THE

 

 

 

 

PEAK CURRENT DECAYS TO 50%

 

 

 

 

 

OF PEAK

 

100

PEAK VALUE Ð I RSM

 

OF IRSM.

C

 

°

 

 

 

 

tr 10

μs

= 25

 

 

 

 

 

 

DERATINGIN %

A

 

 

HALF VALUE Ð

IRSM

 

CURRENT@ T

 

 

2

 

 

 

 

 

 

50

 

 

 

 

 

(%)VALUE

 

 

 

 

 

 

tP

 

 

 

 

PULSE

OR

 

 

 

 

 

 

0

1

2

 

3

4

PEAK

 

0

 

 

 

 

 

 

t, TIME (ms)

 

 

100

 

 

 

 

 

 

 

 

 

90

 

 

 

 

 

 

 

 

 

80

 

 

 

 

 

 

 

 

 

70

 

 

 

 

 

 

 

 

 

60

 

 

 

 

 

 

 

 

 

50

 

 

 

 

 

 

 

 

 

40

 

 

 

 

 

 

 

 

 

30

 

 

 

 

 

 

 

 

 

20

 

 

 

 

 

 

 

 

 

10

 

 

 

 

 

 

 

 

 

0

0

25

50

75

100

125

150

175

200

 

 

 

TA, AMBIENT TEMPERATURE (°C)

 

 

Figure 7. Pulse Waveform

Figure 8. Pulse Derating Curve

 

100

 

 

RECTANGULAR

 

 

 

 

 

 

POWER (W)

 

 

 

WAVEFORM, TA = 25°C

 

 

 

 

 

SURGE

10

 

 

 

 

 

UNIDIRECTIONAL

 

 

 

Ppk PEAK

 

 

 

 

 

 

 

 

 

 

1.0

1.0

10

100

1000

 

0.1

PW, PULSE WIDTH (ms)

Figure 9. Maximum Non-repetitive Surge

Power, Ppk versus PW

Power is defined as VRSM x IZ(pk) where VRSM is the clamping voltage at IZ(pk).

MMQA5V6T1 MMQA20VT1

MOTOROLA

 

3

TYPICAL COMMON ANODE APPLICATIONS

A quad junction common anode design in a SC-59 package protects four separate lines using only one package. This adds flexibility and creativity to PCB design especially

when board space is at a premium. Two simplified examples of MMQA5V6T1 and MMQA20VT1 applications are illustrated below.

 

 

Computer Interface Protection

 

 

 

A

 

KEYBOARD

 

B

FUNCTIONAL

TERMINAL

I/O

C

PRINTER

DECODER

 

D

ETC.

 

 

 

 

 

GND

MMQA5V6T1

MMQA20VT1

Microprocessor Protection

VDD

VGG

ADDRESS BUS

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

RAM

 

 

 

ROM

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

DATA BUS

CPU

I/O

CLOCK

CONTROL BUS

GND

MMQA5V6T1

MMQA20VT1

MOTOROLA

MMQA5V6T1 MMQA20VT1

4

INFORMATION FOR USING THE SC-59 6 LEAD SURFACE MOUNT PACKAGE

MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS

Surface mount board layout is a critical portion of the total design. The footprint for the semiconductor packages must be the correct size to ensure proper solder connection inter-

face between the board and the package. With the correct pad geometry, the packages will self-align when subjected to a solder reflow process.

0.037

0.95

0.074

1.9

0.037

0.95

0.094

2.4

 

0.028

 

0.7

0.039

inches

1.0

mm

 

SC-59 6 LEAD

SC-59 6 LEAD POWER DISSIPATION

The power dissipation of the SC-59 6 Lead is a function of the pad size. This can vary from the minimum pad size for soldering to a pad size given for maximum power dissipation. Power dissipation for a surface mount device is determined

by TJ(max), the maximum rated junction temperature of the die, RθJA, the thermal resistance from the device junction to

ambient, and the operating temperature, TA. Using the values provided on the data sheet for the SC-59 6 Lead package, PD can be calculated as follows:

TJ(max) ± TA

PD = RθJA

The values for the equation are found in the maximum ratings table on the data sheet. Substituting these values into the equation for an ambient temperature TA of 25°C, one can

calculate the power dissipation of the device which in this case is 225 milliwatts.

PD = 150°C ± 25°C = 225 milliwatts 556°C/W

The 556°C/W for the SC-59 6 Lead package assumes the use of the recommended footprint on a glass epoxy printed circuit board to achieve a power dissipation of 225 milliwatts. There are other alternatives to achieving higher power dissipation from the SC-59 6 Lead package. Another alternative would be to use a ceramic substrate or an aluminum core board such as Thermal Clad . Using a board material such as Thermal Clad, an aluminum core board, the power dissipation can be doubled using the same footprint.

SOLDER STENCIL GUIDELINES

Prior to placing surface mount components onto a printed circuit board, solder paste must be applied to the pads. Solder stencils are used to screen the optimum amount. These stencils are typically 0.008 inches thick and may be made of brass or stainless steel. For packages such as the

SC-59, SC-59 6 Lead, SC-70/SOT-323, SOD-123, SOT-23, SOT-143, SOT-223, SO-8, SO-14, SO-16, and SMB/SMC diode packages, the stencil opening should be the same as the pad size or a 1:1 registration.

SOLDERING PRECAUTIONS

The melting temperature of solder is higher than the rated temperature of the device. When the entire device is heated to a high temperature, failure to complete soldering within a short time could result in device failure. Therefore, the following items should always be observed in order to minimize the thermal stress to which the devices are subjected.

Always preheat the device.

The delta temperature between the preheat and soldering should be 100°C or less.*

When preheating and soldering, the temperature of the leads and the case must not exceed the maximum temperature ratings as shown on the data sheet. When

using infrared heating with the reflow soldering method, the difference should be a maximum of 10°C.

* Soldering a device without preheating can cause excessive thermal shock and stress which can result in damage to the device.

MMQA5V6T1 MMQA20VT1

MOTOROLA

 

5

Источник: https://studfile.net/preview/16503237/