Материал: BUL45REV
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by BUL45/D
Designer's Data Sheet |
BUL45* |
|
BUL45F* |
||
|
||
NPN Silicon Power Transistor |
|
|
*Motorola Preferred Device |
||
|
High Voltage SWITCHMODEt Series
Designed for use in electronic ballast (light ballast) and in Switchmode Power supplies up to 50 Watts. Main features include:
•Improved Efficiency Due to:
ÐLow Base Drive Requirements (High and Flat DC Current Gain h FE)
ÐLow Power Losses (On±State and Switching Operations)
ÐFast Switching: t fi = 100 ns (typ) and tsi = 3.2 μs (typ)
ÐFast Switching: @ IC = 2.0 A, IB1 = IB2 = 0.4 A
•Full Characterization at 125°C
•Tight Parametric Distributions Consistent Lot±to±Lot
•BUL45F, Case 221D, is UL Recognized at 3500 VRMS: File #E69369
MAXIMUM RATINGS
Rating |
|
Symbol |
BUL45 |
|
BUL45F |
Unit |
|
|
|
|
|
|
|
Collector±Emitter Sustaining Voltage |
VCEO |
|
400 |
Vdc |
||
Collector±Emitter Breakdown Voltage |
VCES |
|
700 |
Vdc |
||
Emitter±Base Voltage |
|
VEBO |
|
9.0 |
Vdc |
|
Collector Current Ð Continuous |
IC |
|
5.0 |
Adc |
||
Ð Peak(1) |
|
ICM |
|
10 |
|
|
Base Current |
|
IB |
|
2.0 |
Adc |
|
RMS Isolated Voltage(2) |
Test No. 1 Per Fig. 22a |
VISOL |
Ð |
|
4500 |
Volts |
(for 1 sec, R.H. < 30%, |
Test No. 2 Per Fig. 22b |
|
Ð |
|
3500 |
|
TC = 25°C) |
Test No. 3 Per Fig. 22c |
|
Ð |
|
1500 |
|
Total Device Dissipation |
(TC = 25°C) |
PD |
75 |
|
35 |
Watts |
Derate above 25°C |
|
|
0.6 |
|
0.28 |
W/°C |
|
|
|
|
|
||
Operating and Storage Temperature |
TJ, Tstg |
± 65 to 150 |
°C |
|||
THERMAL CHARACTERISTICS |
|
|
|
|
|
|
|
|
|
|
|
||
Rating |
|
Symbol |
MJE18006 |
MJF18006 |
Unit |
|
|
|
|
|
|
|
|
Thermal Resistance Ð Junction to Case |
RθJC |
1.65 |
|
3.55 |
°C/W |
|
Ð Junction to Ambient |
RθJA |
62.5 |
|
62.5 |
|
|
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
POWER TRANSISTOR
5.0 AMPERES
700 VOLTS
35 and 75 WATTS
BUL45
CASE 221A±06
TO±220AB
BUL45F
CASE 221D±02
ISOLATED TO±220 TYPE
UL RECOGNIZED
Characteristic |
Symbol |
Min |
Typ |
Max |
Unit |
|
|
|
|
|
|
OFF CHARACTERISTICS |
|
|
|
|
|
|
|
|
|
|
|
Collector±Emitter Sustaining Voltage (IC = 100 mA, L = 25 mH) |
VCEO(sus) |
400 |
Ð |
Ð |
Vdc |
Collector Cutoff Current (VCE = Rated VCEO, IB = 0) |
ICEO |
Ð |
Ð |
100 |
μAdc |
Collector Cutoff Current (VCE = Rated VCES, VEB = 0) |
ICES |
Ð |
Ð |
10 |
μAdc |
(TC = 125°C) |
|
Ð |
Ð |
100 |
|
Emitter Cutoff Current (VEB = 9.0 Vdc, IC = 0) |
IEBO |
Ð |
Ð |
100 |
μAdc |
(1) Pulse Test: Pulse Width = 5.0 ms, Duty Cycle ≤ 10%. |
|
|
|
|
(continued) |
(2) Proper strike and creepage distance must be provided. |
|
|
|
|
|
Designer's and SWITCHMODE are trademarks of Motorola, Inc.
Designer's Data for ªWorst Caseº Conditions Ð The Designer 's Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit curves Ð representing boundaries on device characteristics Ð are given to facilitate ªworst caseº design.
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 2
Motorola, Inc. 1995
BUL45 BUL45F
ELECTRICAL CHARACTERISTICS Ð continued (TC = 25°C unless otherwise noted)
|
|
Characteristic |
|
|
|
|
Symbol |
Min |
Typ |
Max |
Unit |
|||
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
ON CHARACTERISTICS |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|||||
Base±Emitter Saturation Voltage (IC = 1.0 Adc, IB = 0.2 Adc) |
VBE(sat) |
Ð |
0.84 |
1.2 |
Vdc |
|||||||||
|
|
|
|
(IC = 2.0 Adc, IB = 0.4 Adc) |
|
Ð |
0.89 |
1.25 |
|
|||||
Collector±Emitter Saturation Voltage |
|
|
|
|
VCE(sat) |
|
|
|
Vdc |
|||||
(IC = 1.0 Adc, IB = 0.2 Adc) |
|
|
|
|
|
(TC = 125°C) |
|
Ð |
0.175 |
0.25 |
|
|||
|
|
|
|
|
|
|
|
|
|
Ð |
0.150 |
Ð |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
||
Collector±Emitter Saturation Voltage |
|
|
|
|
VCE(sat) |
|
|
|
Vdc |
|||||
(IC = 2.0 Adc, IB = 0.4 Adc) |
|
|
|
|
|
(TC = 125°C) |
|
Ð |
0.25 |
0.4 |
|
|||
|
|
|
|
|
|
|
|
|
|
Ð |
0.275 |
Ð |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
||
DC Current Gain (IC = 0.3 Adc, VCE = 5.0 Vdc) |
|
|
|
(TC = 125°C) |
hFE |
14 |
Ð |
34 |
Ð |
|||||
DC Current Gain (IC = 2.0 Adc, VCE = 1.0 Vdc) |
|
|
|
|
Ð |
32 |
Ð |
|
||||||
|
|
|
(TC = 125°C) |
|
7.0 |
14 |
Ð |
|
||||||
DC Current Gain (IC = 10 mAdc, VCE = 5.0 Vdc) |
|
|
|
|
5.0 |
12 |
Ð |
|
||||||
|
|
|
|
|
10 |
22 |
Ð |
|
||||||
|
|
|
|
|
|
|
|
|
|
|
|
|
||
DYNAMIC CHARACTERISTICS |
|
|
|
|
|
|
|
|
|
|||||
|
|
|
|
|
|
|
|
|
|
|||||
Current Gain Bandwidth (IC = 0.5 Adc, VCE = 10 Vdc, f = 1.0 MHz) |
fT |
Ð |
12 |
Ð |
MHz |
|||||||||
Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) |
|
Cob |
Ð |
50 |
75 |
pF |
||||||||
Input Capacitance (VEB = 8.0 Vdc) |
|
|
|
|
Cib |
Ð |
920 |
1200 |
pF |
|||||
Dynamic Saturation Voltage: |
|
|
|
1.0 |
μs |
|
|
|
Ð |
1.75 |
Ð |
|
||
|
|
|
|
(IC = 1.0 Adc |
|
|
(TC = 125°C) |
|
Ð |
4.4 |
Ð |
|
||
|
|
|
|
|
|
|
|
|
|
|||||
Determined 1.0 μs and |
|
|
IB1 = 100 mAdc |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
Ð |
0.5 |
Ð |
|
|||
3.0 μs respectively after |
|
VCC = 300 V) |
|
3.0 |
μ |
|
|
|
|
|||||
rising IB1 reaches 90% |
|
|
|
s |
|
(TC = 125°C) |
VCE |
Ð |
1.0 |
Ð |
|
|||
|
|
|
|
|
|
Vdc |
||||||||
|
|
|
|
|
|
|
|
|
|
|||||
of final IB1 |
|
|
|
|
1.0 |
μs |
|
|
(Dyn sat) |
Ð |
1.85 |
Ð |
|
|
(see Figure 18) |
|
|
(IC = 2.0 Adc |
|
|
(TC = 125°C) |
|
Ð |
6.0 |
Ð |
|
|||
|
|
|
|
|
|
|
|
|||||||
|
|
|
|
IB1 = 400 mAdc |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
Ð |
0.5 |
Ð |
|
|
|
|
|
|
VCC = 300 V) |
|
3.0 |
μ |
|
|
|
|
|||
|
|
|
|
|
|
s |
|
(TC = 125°C) |
|
Ð |
1.0 |
Ð |
|
|
|
|
|
|
|
|
|
|
|
|
|
||||
SWITCHING CHARACTERISTICS: Resistive Load |
|
|
|
|
|
|
|
|
|
|||||
|
|
|
|
|
|
|
|
|
||||||
Turn±On Time |
|
(IC = 2.0 Adc, IB1 = IB2 = 0.4 Adc |
|
ton |
Ð |
75 |
110 |
ns |
||||||
|
|
Pulse Width = 20 μs, |
|
|
|
(TC = 125°C) |
|
Ð |
120 |
Ð |
|
|||
|
|
Duty Cycle < 20% |
|
|
|
|
|
|
|
|
|
|||
Turn±Off Time |
|
|
|
|
|
toff |
Ð |
2.8 |
3.5 |
μ |
||||
|
V |
= 300 V) |
|
|
|
|
||||||||
|
|
|
|
|
|
s |
||||||||
|
|
CC |
|
|
|
|
|
(TC = 125°C) |
|
Ð |
3.5 |
Ð |
|
|
|
|
|
|
|
|
|
|
|
|
|
||||
SWITCHING CHARACTERISTICS: Inductive Load (VCC = 15 Vdc, LC = 200 μH, Vclamp = 300 Vdc) |
|
|
|
|||||||||||
Fall Time |
|
(IC = 2.0 Adc, IB1 = 0.4 Adc |
|
|
(TC = 125°C) |
tfi |
70 |
Ð |
170 |
ns |
||||
|
|
IB2 = 0.4 Adc) |
|
|
|
|
Ð |
200 |
Ð |
|
||||
Storage Time |
|
|
|
|
|
|
|
|
(TC = 125°C) |
tsi |
2.6 |
Ð |
3.8 |
μs |
|
|
|
|
|
|
|
|
|
|
Ð |
4.2 |
Ð |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
Crossover Time |
|
|
|
|
|
|
|
|
(TC = 125°C) |
tc |
Ð |
230 |
350 |
ns |
|
|
|
|
|
|
|
|
|
|
Ð |
400 |
Ð |
|
|
|
|
|
|
|
|
|
|
|
||||||
Fall Time |
|
(IC = 1.0 Adc, IB1 = 100 mAdc |
(TC = 125°C) |
tfi |
Ð |
110 |
150 |
ns |
||||||
|
|
IB2 = 0.5 Adc) |
|
|
|
|
Ð |
100 |
Ð |
|
||||
Storage Time |
|
|
|
|
|
|
|
|
(TC = 125°C) |
tsi |
Ð |
1.1 |
1.7 |
μs |
|
|
|
|
|
|
|
|
|
|
Ð |
1.5 |
Ð |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
Crossover Time |
|
|
|
|
|
|
|
|
(TC = 125°C) |
tc |
Ð |
170 |
250 |
ns |
|
|
|
|
|
|
|
|
|
|
Ð |
170 |
Ð |
|
|
|
|
|
|
|
|
|
|
|
||||||
Fall Time |
|
(IC = 2.0 Adc, IB1 = 250 mAdc |
(TC = 125°C) |
tfi |
Ð |
80 |
120 |
ns |
||||||
|
|
IB2 = 2.0 Adc) |
|
|
|
|
|
|
|
|
||||
Storage Time |
|
|
|
|
|
|
|
|
(TC = 125°C) |
tsi |
Ð |
0.6 |
0.9 |
μs |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
Crossover Time |
|
|
|
|
|
|
|
|
(TC = 125°C) |
tc |
Ð |
175 |
300 |
ns |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
2 |
Motorola Bipolar Power Transistor Device Data |
BUL45 BUL45F
TYPICAL STATIC CHARACTERISTICS
|
100 |
|
|
|
|
100 |
|
|
|
|
|
TJ = 25°C |
|
VCE = 1 V |
|
|
|
° |
VCE = 5 V |
|
|
|
|
|
|
|
TJ = 25 C |
|
|
GAIN |
|
TJ = 125°C |
|
|
GAIN |
TJ = 125°C |
|
|
|
|
|
|
|
|
|
|
|
||
, DC CURRENT |
|
TJ = ± 20°C |
|
|
, DC CURRENT |
TJ = ± 20°C |
|
|
|
10 |
|
|
|
10 |
|
|
|
||
|
|
|
|
|
|
|
|
||
FE |
|
|
|
|
FE |
|
|
|
|
h |
|
|
|
|
h |
|
|
|
|
|
1 |
|
|
|
|
1 |
|
|
|
|
0.01 |
0.10 |
1.00 |
10.00 |
|
0.01 |
0.10 |
1.00 |
10.00 |
|
|
IC, COLLECTOR CURRENT (AMPS) |
|
|
|
IC, COLLECTOR CURRENT (AMPS) |
|
||
Figure 1. DC Current Gain @ 1 Volt |
Figure 2. DC Current Gain at @ 5 Volts |
|
2.0 |
|
|
TJ = 25°C |
|
|
|
|
|
(VOLTS) |
1.5 |
|
|
|
|
|
|
|
|
VOLTAGE, |
1 A |
1.5 2 A |
3 A 4 A 5 A |
6 A |
|
1.0 |
A |
|
|
|
|
|
|
|
CE |
|
|
|
|
V |
0.5 |
|
|
|
|
|
|
|
|
|
IC = 0.5 A |
|
|
|
|
0 |
0.10 |
1.00 |
10.00 |
|
0.01 |
IB, BASE CURRENT (AMPS)
Figure 3. Collector±Emitter Saturation Region
|
1.1 |
|
|
|
|
1.0 |
|
|
|
(VOLTS) |
0.9 |
|
|
|
0.8 |
|
|
|
|
, VOLTAGE |
|
|
|
|
0.7 |
TJ = 25°C |
|
|
|
|
|
|
||
|
|
|
|
|
BE |
0.6 |
|
|
|
V |
TJ = 125°C |
|
|
|
|
|
|
IC/IB = 10 |
|
|
0.5 |
|
|
|
|
|
|
|
IC/IB = 5 |
|
0.4 |
|
|
|
|
0.01 |
0.10 |
1.00 |
10.00 |
IC, COLLECTOR CURRENT (AMPS)
Figure 5. Base±Emitter Saturation Region
|
10 |
|
|
|
|
|
|
,VOLTAGE (VOLTS) |
1.0 |
|
|
|
|
|
|
0.1 |
IC/IB = 10 |
|
|
|
|||
CE |
|
|
|
||||
|
|
|
|
|
|
|
|
V |
|
|
|
|
|
|
|
|
|
I |
/I |
= 5 |
|
|
TJ = 25°C |
|
|
|
C B |
|
|
|
TJ = 125°C |
|
|
|
|
|
|
|
|
|
0.01 |
|
|
|
0.10 |
1.00 |
10.00 |
|
0.01 |
|
|
|
|||
|
|
|
|
|
IC, COLLECTOR CURRENT (AMPS) |
|
|
Figure 4. Collector±Emitter Saturation Voltage
|
10000 |
|
|
|
|
|
|
|
TJ = 25°C |
|
|
Cib |
|
f = 1 MHz |
|
1000 |
|
|
|
(pF) |
|
|
|
|
|
|
|
|
|
C, CAPACITANCE |
100 |
Cob |
|
|
|
|
|
||
10 |
|
|
|
|
|
|
|
|
|
|
1 |
10 |
100 |
1000 |
|
1 |
VCE, COLLECTOR±EMITTER VOLTAGE (VOLTS)
Figure 6. Capacitance
Motorola Bipolar Power Transistor Device Data |
3 |
BUL45 BUL45F
TYPICAL SWITCHING CHARACTERISTICS (IB2 = IC/2 for all switching)
1200 |
IB(off) = IC/2 |
|
|
|
|
|
3000 |
|
|
|
|
° |
|
|
|
||
|
VCC = 300 V |
|
|
TJ = 25 C |
|
|
||
1000 |
|
|
° |
|
2500 |
|||
PW = 20 |
μs |
|
|
TJ = 125 |
C |
|
||
|
|
|
|
|
|
|
||
800 |
|
|
|
|
|
|
|
2000 |
600 |
IC/IB = 10 |
|
|
|
|
|
1500 |
|
|
|
|
|
|
|
|
||
TIMEt,(ns) |
|
|
|
|
|
|
|
TIMEt,(ns) |
400 |
|
|
|
|
|
|
|
1000 |
200 |
|
|
|
|
|
|
IC/IB = 5 |
500 |
|
|
|
|
|
|
|
|
|
0 |
|
|
|
|
|
|
|
0 |
0 |
1 |
2 |
3 |
4 |
5 |
6 |
7 |
8 |
|
|
IC, COLLECTOR CURRENT (AMPS) |
|
|
||||
|
|
|
|
|
TJ = 25°C |
|
IB(off) = IC/2 |
|
|
|
IC/IB = 5 |
|
|
|
VCC = 300 V |
|
|
|
|
|
|
TJ = 125°C |
|
|
||
|
|
|
|
|
|
|
PW = 20 μs |
|
|
IC/IB = 10 |
|
|
|
|
|
|
|
0 |
1 |
2 |
3 |
4 |
5 |
6 |
7 |
8 |
|
|
IC, COLLECTOR CURRENT (AMPS) |
|
|
||||
Figure 7. Resistive Switching, ton |
Figure 8. Resistive Switching, toff |
|
3500 |
|
|
|
|
|
|
|
|
|
3500 |
|
|
|
|
|
|
|
|
|
|
IB(off) = IC/2 |
|
|
|
3000 |
|
|
|
V |
Z |
= 300 V |
|
|
|
|
|
|
|
|
|
TJ = 25°C |
|
||||||
|
|
|
|
V |
|
= 15 V |
|
|
|
|
|
|
|
|
|
|
° |
LC = 200 μH |
|
|||||
|
|
|
|
|
CC |
|
3000 |
|
|
|
|
|
|
|
TJ = 125 |
C |
VZ = 300 V |
|
||||||
|
|
|
|
IC/IB = 5 |
IB(off) = IC/2 |
|
|
|
|
|
|
|
|
|
|
|
|
|
||||||
|
2500 |
|
|
(ns) |
|
|
|
|
|
|
|
|
|
|
|
VCC = 15 V |
|
|||||||
|
|
|
|
LC = 200 |
μH |
2500 |
|
|
|
|
|
|
|
|
|
|
|
|||||||
(ns)TIMEt, |
|
|
|
|
|
|
|
|
|
TIMESTORAGE |
|
|
|
|
|
IC |
= 1 A |
|
|
|
|
|
|
|
2000 |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
||||
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|||
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
2000 |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
1500 |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
1000 |
|
|
|
|
|
|
|
|
si |
1500 |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
, |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
t |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
500 |
TJ = 25°C |
|
|
|
|
|
|
|
|
1000 |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
TJ = 125°C |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
IC/IB = 10 |
|
|
|
|
|
|
|
|
|
|
|
IC = 2 A |
|
|
|
|
|
|
|
||
|
0 |
|
|
|
|
|
|
|
|
500 |
|
|
|
|
|
|
|
|
|
|
|
|||
|
0 |
1 |
2 |
3 |
|
4 |
|
5 |
|
3 |
4 |
5 |
6 |
7 |
8 |
9 |
10 |
11 |
12 |
13 |
14 |
15 |
||
|
|
IC, COLLECTOR CURRENT (AMPS) |
|
|
|
|
|
|
|
|
|
|
|
hFE, FORCED GAIN |
|
|
|
|
|
|||||
Figure 9. Inductive Storage Time, tsi |
Figure 10. Inductive Storage Time, tsi(hFE) |
|
300 |
|
|
|
|
|
|
200 |
|
250 |
|
|
|
tc |
|
|
|
|
|
|
|
|
|
|
150 |
|
|
|
|
|
|
|
|
|
|
|
200 |
|
|
|
|
|
|
|
(ns) |
|
|
|
|
|
|
(ns) |
|
t, TIME |
150 |
|
|
|
|
|
t, TIME |
100 |
|
|
|
|
|
|
|
||
|
100 |
VCC = 15 V |
|
|
|
|
|
|
|
|
|
|
|
|
50 |
||
|
50 |
IB(off) = IC/2 |
|
tfi |
° |
|
|
|
|
LC = 200 |
μ |
|
|
|
|||
|
|
H |
|
|
TJ = 25 C |
|
|
|
|
0 |
VZ = 300 V |
|
|
TJ = 125°C |
|
0 |
|
|
0 |
1 |
2 |
3 |
4 |
5 |
||
|
|
|
||||||
IC, COLLECTOR CURRENT (AMPS)
|
|
|
tc |
|
|
IB(off) = IC/2 |
|
|
|
|
|
VCC = 15 V |
|
t |
|
|
|
V |
= 300 V |
|
fi |
° |
|
Z |
= 200 μH |
|
|
TJ = 25 C |
|
L |
|
|
TJ = 125 |
° |
|
C |
|
|
|
C |
|
0 |
1 |
2 |
3 |
4 |
5 |
|
IC, COLLECTOR CURRENT (AMPS) |
|
|
||
Figure 11. Inductive Switching, tc & tfi, IC/IB = 5 |
Figure 12. Inductive Switching, tc & tfi, IC/IB = 10 |
4 |
Motorola Bipolar Power Transistor Device Data |
BUL45 BUL45F
TYPICAL SWITCHING CHARACTERISTICS (IB2 = IC/2 for all switching)
|
150 |
|
|
|
|
|
|
|
|
|
|
|
|
300 |
|
140 |
|
|
|
|
|
|
TJ = 25°C |
|
IB(off) = IC/2 |
|
|
||
|
|
|
|
|
|
|
TJ = 125°C |
|
VCC |
= 15 V |
|
|
||
|
|
|
|
|
|
|
|
|
|
250 |
||||
|
130 |
|
|
|
|
|
|
|
|
|
VZ = 300 V |
(ns) |
||
|
|
|
|
|
|
|
|
|
|
|
||||
|
|
|
|
|
|
|
|
|
IC = 1 A |
|
LC = 200 μH |
|
||
TIME (ns) |
120 |
|
|
|
|
|
|
|
|
TIME |
|
|||
|
|
|
|
|
|
|
|
|
|
|
200 |
|||
|
|
|
|
|
|
|
|
|
|
|
|
|||
110 |
|
|
|
|
|
|
|
|
|
|
|
|
||
, FALL |
|
|
|
|
|
|
|
|
|
|
|
CROSSOVER |
|
|
100 |
|
|
|
|
|
|
|
|
|
|
|
150 |
||
fi |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
t |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
90 |
|
|
|
|
|
|
|
|
|
|
|
, |
|
|
|
|
|
|
|
|
|
|
|
|
|
c |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
t |
100 |
|
|
|
IC = 2 A |
|
|
|
|
|
|
|
|
|
||
|
80 |
|
|
|
|
|
|
|
|
|
|
|
||
|
70 |
4 |
5 |
6 |
7 |
8 |
9 |
10 |
11 |
12 |
13 |
14 |
15 |
50 |
|
3 |
|
||||||||||||
hFE, FORCED GAIN
|
|
|
|
|
|
|
|
|
|
VCC = 15 V |
|
|
|
|
|
|
|
|
|
|
|
|
VZ = 300 V |
|
|
|
|
|
|
|
|
|
|
|
|
IB(off) = IC/2 |
|
|
|
|
|
|
|
|
|
IC = 1 A |
|
LC = 200 μH |
|
||
|
|
|
|
|
|
|
|
|
|
|
||
|
|
|
TJ = 25°C |
|
IC = 2 A |
|
|
|
|
|
|
|
|
|
|
TJ = 125 |
° |
|
|
|
|
|
|
|
|
|
|
|
C |
|
|
|
|
|
|
|
||
3 |
4 |
5 |
6 |
7 |
8 |
9 |
10 |
11 |
12 |
13 |
14 |
15 |
|
|
|
|
|
hFE, FORCED GAIN |
|
|
|
|
|
||
Figure 13. Inductive Fall Time, tfi(hFE) |
Figure 14. Crossover Time |
GUARANTEED SAFE OPERATING AREA INFORMATION
|
100 |
|
|
|
|
(AMPS) |
DC (BUL45) |
|
|
|
|
5 ms |
1 ms |
50 μs |
10 μs |
1 μs |
|
10 |
|
|
|
|
|
CURRENT |
1.0 |
|
|
|
EXTENDED |
, COLLECTOR |
|
|
|
|
SOA |
DC (BUL45F) |
|
|
|
|
|
0.1 |
|
|
|
|
|
|
|
|
|
|
|
C |
|
|
|
|
|
I |
|
|
|
|
|
|
0.01 |
|
|
|
|
|
10 |
100 |
|
|
1000 |
|
VCE, COLLECTOR±EMITTER VOLTAGE (VOLTS) |
||||
|
6 |
|
|
|
|
|
(AMPS) |
|
|
|
|
TC ≤ 125°C |
|
5 |
|
|
|
IC/IB ≥ |
4 |
|
|
|
|
|
LC = 500 μH |
||
CURRENT |
4 |
|
|
|
|
|
3 |
|
|
|
|
|
|
COLLECTOR |
|
|
|
|
|
|
2 |
|
|
|
|
|
|
1 |
|
|
|
±5 V |
|
|
, |
|
|
|
|
||
C |
|
|
|
|
|
|
I |
|
VBE(off) = 0 V |
±1.5 V |
|
|
|
|
0 |
|
|
|||
|
|
|
|
|
|
|
|
300 |
400 |
500 |
600 |
700 |
800 |
VCE, COLLECTOR±EMITTER VOLTAGE (VOLTS)
Figure 15. Forward Bias Safe Operating Area |
Figure 16. Reverse Bias Switching Safe Operating Area |
|
1.0 |
|
|
|
|
|
|
|
FACTOR |
0.8 |
|
|
|
|
SECOND BREAKDOWN |
|
|
|
|
|
|
DERATING |
|
|||
|
|
|
|
|
|
|||
|
|
|
|
|
|
|
|
|
DERATING |
0.6 |
|
|
|
|
|
|
|
0.4 |
|
|
|
|
|
|
|
|
POWER |
|
|
|
|
|
|
|
|
0.2 |
|
|
THERMAL DERATING |
|
|
|||
|
|
|
|
|
|
|
|
|
|
0 |
|
|
|
|
|
|
|
|
20 |
40 |
60 |
80 |
100 |
120 |
140 |
160 |
|
|
|
TC, CASE TEMPERATURE (°C) |
|
|
|||
Figure 17. Forward Bias Power Derating
There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC ± VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 15 is based on TC = 25°C; TJ(pk) is variable depending on power level. Second breakdown pulse limits are valid for duty cycles to 10% but must be derated when TC ≥ 25°C. Second breakdown limitations do not derate the same as thermal limitations. Allowable current at the voltages shown in Figure 15 may be found at any case temperature by using the appropriate curve on Fig-
ure 17. TJ(pk) may be calculated from the data in Figures 20 and 21. At any case temperatures, thermal limitations will re-
duce the power that can be handled to values less than the limitations imposed by second breakdown. For inductive loads, high voltage and current must be sustained simultaneously during turn±off with the base±to±emitter junction reverse±biased. The safe level is specified as a reverse±biased safe operating area (Figure 16). This rating is verified under clamped conditions so that the device is never subjected to an avalanche mode.
Motorola Bipolar Power Transistor Device Data |
5 |