Материал: 9676
Philips Semiconductors |
Product specification |
|
|
Triacs |
BT139X series |
|
|
|
|
GENERAL DESCRIPTION |
QUICK REFERENCE DATA |
|
|
|
|
|
|
|
|
|
|
|
||||||||||
|
|
|
|
|
|
|
|
|
|
|
|
|||||||||||
Glass passivated triacs in a full pack, |
|
SYMBOL |
|
PARAMETER |
|
|
|
MAX. |
MAX. |
MAX. |
UNIT |
|||||||||||
plastic envelope, intended for use in |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|||
|
|
|
|
|
BT139X- |
500 |
|
600 |
|
|
800 |
|
|
|
|
|||||||
applications |
requiring |
high |
|
|
|
|
|
|
|
|
|
|
|
|
||||||||
bidirectional |
transient and |
blocking |
|
|
|
|
|
BT139X- |
500F |
600F |
800F |
|
|
|
||||||||
voltage capability and high thermal |
|
|
|
|
|
BT139X- |
|
500G |
|
600G |
800G |
|
|
|
||||||||
cycling |
performance. |
Typical |
|
VDRM |
|
Repetitive peak off-state |
|
500 |
|
|
600 |
|
|
800 |
|
|
V |
|||||
applications |
include motor |
control, |
|
|
|
|
voltages |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
industrial |
and domestic |
lighting, |
|
IT(RMS) |
|
RMS on-state current |
|
16 |
|
|
16 |
|
|
16 |
|
|
A |
|||||
heating and static switching. |
|
|
ITSM |
|
Non-repetitive peak on-state |
|
140 |
|
|
140 |
|
|
140 |
|
|
A |
||||||
|
|
|
|
|
|
|
|
current |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
PINNING - SOT186A |
|
PIN CONFIGURATION |
SYMBOL |
|
|
|
|
|
|
|
|
|||||||||||
PIN DESCRIPTION
1main terminal 1
2main terminal 2
3gate
case isolated
case
T2 |
T1 |
1 2 3 |
G |
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL |
PARAMETER |
CONDITIONS |
MIN. |
|
MAX. |
|
UNIT |
|
|
|
|
|
|
|
|
|
|
|
|
-500 |
-600 |
-800 |
|
V |
Repetitive peak off-state |
|
- |
5001 |
6001 |
800 |
V |
DRM |
voltages |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
full sine wave; Ths ≤ 38 ˚C |
|
|
|
|
|
IT(RMS) |
RMS on-state current |
- |
|
16 |
|
A |
|
ITSM |
Non-repetitive peak |
full sine wave; Tj = 125 ˚C prior |
|
|
|
|
|
|
on-state current |
to surge; with reapplied VDRM(max) |
- |
|
140 |
|
A |
|
|
t = 20 ms |
|
|
|||
|
|
t = 16.7 ms |
- |
|
150 |
|
A |
I2t |
I2t for fusing |
t = 10 ms |
- |
|
98 |
|
A2s |
dIT/dt |
Repetitive rate of rise of |
ITM = 20 A; IG = 0.2 A; |
|
|
|
|
|
|
on-state current after |
dIG/dt = 0.2 A/μs |
|
|
|
|
A/μs |
|
triggering |
T2+ G+ |
- |
|
50 |
|
|
|
|
T2+ G- |
- |
|
50 |
|
A/μs |
|
|
T2- G- |
- |
|
50 |
|
A/μs |
|
|
T2- G+ |
- |
|
10 |
|
A/μs |
IGM |
Peak gate current |
|
- |
|
2 |
|
A |
VGM |
Peak gate voltage |
|
- |
|
5 |
|
V |
PGM |
Peak gate power |
|
- |
|
5 |
|
W |
PG(AV) |
Average gate power |
over any 20 ms period |
- |
|
0.5 |
|
W |
Tstg |
Storage temperature |
|
-40 |
|
150 |
|
˚C |
Tj |
Operating junction |
|
- |
|
125 |
|
˚C |
|
temperature |
|
|
|
|
|
|
1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may switch to the on-state. The rate of rise of current should not exceed 15 A/μs.
February 1996 |
1 |
Rev 1.100 |
Philips Semiconductors |
Product specification |
|
|
Triacs |
BT139X series |
|
|
ISOLATION LIMITING VALUE & CHARACTERISTIC
Ths = 25 ˚C unless otherwise specified
SYMBOL |
PARAMETER |
CONDITIONS |
MIN. |
TYP. |
MAX. |
UNIT |
Visol |
R.M.S. isolation voltage from all |
f = 50-60 Hz; sinusoidal |
- |
|
2500 |
V |
|
three terminals to external |
waveform; |
|
|
|
|
|
heatsink |
R.H. ≤ 65% ; clean and dustfree |
|
|
|
|
|
|
|
|
|
|
|
Cisol |
Capacitance from T2 to external |
f = 1 MHz |
- |
10 |
- |
pF |
|
heatsink |
|
|
|
|
|
THERMAL RESISTANCES
SYMBOL |
PARAMETER |
CONDITIONS |
MIN. |
TYP. |
MAX. |
UNIT |
Rth j-hs |
Thermal resistance |
full or half cycle |
- |
- |
4.0 |
K/W |
|
junction to heatsink |
with heatsink compound |
||||
|
|
without heatsink compound |
- |
- |
5.5 |
K/W |
Rth j-a |
Thermal resistance |
in free air |
- |
55 |
- |
K/W |
|
junction to ambient |
|
|
|
|
|
STATIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL |
PARAMETER |
CONDITIONS |
MIN. |
TYP. |
|
MAX. |
|
UNIT |
|
|
|
|
BT139X- |
|
|
... |
...F |
...G |
|
IGT |
Gate trigger current |
VD = 12 |
V; IT = 0.1 A |
- |
5 |
35 |
25 |
50 |
mA |
|
|
|
T2+ G+ |
||||||
|
|
|
T2+ G- |
- |
8 |
35 |
25 |
50 |
mA |
|
|
|
T2- G- |
- |
10 |
35 |
25 |
50 |
mA |
|
|
|
T2- G+ |
- |
22 |
70 |
70 |
100 |
mA |
IL |
Latching current |
VD = 12 |
V; IGT = 0.1 A |
- |
7 |
40 |
40 |
60 |
mA |
|
|
|
T2+ G+ |
||||||
|
|
|
T2+ G- |
- |
20 |
60 |
60 |
90 |
mA |
|
|
|
T2- G- |
- |
8 |
40 |
40 |
60 |
mA |
|
|
|
T2- G+ |
- |
10 |
60 |
60 |
90 |
mA |
IH |
Holding current |
VD = 12 |
V; IGT = 0.1 A |
- |
6 |
30 |
30 |
60 |
mA |
VT |
On-state voltage |
IT = 20 A |
- |
1.2 |
|
1.6 |
|
V |
|
VGT |
Gate trigger voltage |
VD = 12 |
V; IT = 0.1 A |
- |
0.7 |
|
1.5 |
|
V |
|
|
VD = 400 V; IT = 0.1 A; |
0.25 |
0.4 |
|
- |
|
V |
|
ID |
|
Tj = 125 ˚C |
|
|
|
|
|
|
|
Off-state leakage current |
VD = VDRM(max); |
- |
0.1 |
|
0.5 |
|
mA |
||
|
|
Tj = 125 ˚C |
|
|
|
|
|
|
|
February 1996 |
2 |
Rev 1.100 |
Philips Semiconductors |
Product specification |
|
|
Triacs |
BT139X series |
|
|
DYNAMIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL |
PARAMETER |
CONDITIONS |
|
MIN. |
|
TYP. |
MAX. |
UNIT |
|
|
BT139X- |
... |
...F |
...G |
|
|
V/μs |
dVD/dt |
Critical rate of rise of |
VDM = 67% VDRM(max); |
100 |
50 |
200 |
250 |
- |
|
|
off-state voltage |
Tj = 125 ˚C; exponential |
|
|
|
|
|
|
|
|
waveform; gate open |
|
|
|
|
|
|
|
|
circuit |
|
|
|
|
|
V/μs |
dVcom/dt |
Critical rate of change of |
VDM = 400 V; Tj = 95 ˚C; |
- |
- |
10 |
20 |
- |
|
|
commutating voltage |
IT(RMS) = 16 A; |
|
|
|
|
|
|
|
|
dIcom/dt = 7.2 A/ms; gate |
|
|
|
|
|
|
|
|
open circuit |
|
|
|
|
|
μs |
tgt |
Gate controlled turn-on |
ITM = 20 A; VD = VDRM(max); |
- |
- |
- |
2 |
- |
|
|
time |
IG = 0.1 A; dIG/dt = 5 A/μs |
|
|
|
|
|
|
February 1996 |
3 |
Rev 1.100 |
Philips Semiconductors |
Product specification |
|
|
Triacs |
BT139X series |
|
|
25 |
Ptot / W |
|
BT139 |
|
Ths(max) / C 25 |
|
|
|
|
||||
|
|
|
|
|
= 180 |
|
20 |
|
|
|
|
120 |
45 |
|
|
|
1 |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
90 |
|
15 |
|
|
|
|
60 |
65 |
|
|
|
|
|
|
|
10 |
|
|
|
|
30 |
85 |
|
|
|
|
|
||
5 |
|
|
|
|
|
105 |
0 |
0 |
5 |
10 |
15 |
|
125 |
|
|
20 |
||||
|
|
|
IT(RMS) / A |
|
|
|
Fig.1. Maximum on-state dissipation, Ptot, versus rms on-state current, IT(RMS), where α = conduction angle.
1000 |
ITSM / A |
|
BT139 |
|
|
100 |
|
|
|
|
|
|
|
dIT/dt limit |
|
|
|
|
|
T2- G+ quadrant |
|
IT |
ITSM |
|
|
|
|
|
|
|
|
|
|
T |
time |
10 |
|
|
|
Tj initial = 125 C max |
|
|
100us |
1ms |
10ms |
100ms |
|
10us |
|||||
|
|
|
T / s |
|
|
Fig.2. Maximum permissible non-repetitive peak on-state current ITSM, versus pulse width tp, for sinusoidal currents, tp ≤ 20ms.
150 |
ITSM / A |
|
BT139 |
|
|
|
|
IT |
ITSM |
|
|
|
T |
time |
100 |
|
|
Tj initial = 125 C max |
|
|
|
|
||
50 |
|
|
|
|
0 |
1 |
10 |
100 |
1000 |
|
|
Number of cycles at 50Hz |
|
|
Fig.3. Maximum permissible non-repetitive peak on-state current ITSM, versus number of cycles, for sinusoidal currents, f = 50 Hz.
IT(RMS) / A |
|
BT139X |
|
|
20 |
|
|
|
|
|
|
38 C |
|
|
15 |
|
|
|
|
10 |
|
|
|
|
5 |
|
|
|
|
0 |
0 |
50 |
100 |
150 |
-50 |
||||
|
|
Ths / C |
|
|
Fig.4. Maximum permissible rms current IT(RMS) , versus heatsink temperature Ths.
50 |
IT(RMS) / A |
BT139 |
|
|
40 |
|
|
|
|
30 |
|
|
|
|
20 |
|
|
|
|
10 |
|
|
|
|
0 |
|
0.1 |
1 |
10 |
0.01 |
||||
|
|
surge duration / s |
|
|
Fig.5. Maximum permissible repetitive rms on-state
current IT(RMS), versus surge duration, for sinusoidal currents, f = 50 Hz; Ths ≤ 38˚C.
|
VGT(Tj) |
|
BT136 |
|
|
1.6 |
VGT(25 C) |
|
|
||
1.4 |
|
|
|
|
|
1.2 |
|
|
|
|
|
1 |
|
|
|
|
|
0.8 |
|
|
|
|
|
0.6 |
|
|
|
|
|
0.4 |
|
0 |
50 |
100 |
150 |
-50 |
|||||
|
|
|
Tj / |
C |
|
Fig.6. Normalised gate trigger voltage VGT(Tj)/ VGT(25˚C), versus junction temperature Tj.
February 1996 |
4 |
Rev 1.100 |
Philips Semiconductors |
Product specification |
|
|
Triacs |
BT139X series |
|
|
|
IGT(Tj) |
|
|
|
|
3 |
IGT(25 C) |
|
BT139 |
T2+ G+ |
|
|
|
|
|
|
|
2.5 |
|
|
|
T2+ G- |
|
|
|
|
T2- G- |
|
|
|
|
|
|
|
|
|
|
|
|
T2- G+ |
|
2 |
|
|
|
|
|
1.5 |
|
|
|
|
|
1 |
|
|
|
|
|
0.5 |
|
|
|
|
|
0 |
|
0 |
50 |
100 |
150 |
-50 |
|||||
|
|
|
Tj / C |
|
|
Fig.7. Normalised gate trigger current IGT(Tj)/ IGT(25˚C), versus junction temperature Tj.
IL(Tj) |
|
|
|
|
IL(25 C) |
TRIAC |
|
|
|
3 |
|
|
|
|
2.5 |
|
|
|
|
2 |
|
|
|
|
1.5 |
|
|
|
|
1 |
|
|
|
|
0.5 |
|
|
|
|
0 |
0 |
50 |
100 |
150 |
-50 |
||||
|
|
Tj / C |
|
|
Fig.8. |
Normalised latching current IL(Tj)/ IL(25˚C), |
|||
|
versus junction temperature Tj. |
|
||
IH(Tj) |
|
|
|
|
3 IH(25C) |
TRIAC |
|
|
|
2.5 |
|
|
|
|
2 |
|
|
|
|
1.5 |
|
|
|
|
1 |
|
|
|
|
0.5 |
|
|
|
|
0 |
0 |
50 |
100 |
150 |
-50 |
||||
|
|
Tj / C |
|
|
Fig.9. Normalised holding current IH(Tj)/ IH(25˚C), versus junction temperature Tj.
50 |
IT / A |
|
BT139 |
|
|
Tj = 125 C |
|
|
|
||
|
|
|
|
||
40 |
Tj = 25 C |
|
typ |
max |
|
|
|||||
|
|
||||
Vo = 1.195 V |
|
|
|
||
|
|
|
|
||
|
Rs = 0.018 Ohms |
|
|
|
|
30 |
|
|
|
|
|
|
|
|
|
|
|
20
10
0
0 |
0.5 |
1 |
1.5 |
2 |
2.5 |
3 |
|
|
|
VT / V |
|
|
|
Fig.10. Typical and maximum on-state characteristic.
10 |
Zth j-hs (K/W) |
|
BT139 |
|
|
|
|
|
with heatsink compound |
|
|
|
|||
|
without heatsink compound |
|
|
|
|||
1 |
|
|
unidirectional |
bidirectional |
|
|
|
|
|
|
|
|
|
|
|
0.1 |
|
|
|
|
|
|
|
|
|
|
|
P |
t p |
|
|
|
|
|
|
D |
|
|
|
0.01 |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
t |
0.001 |
|
0.1ms |
1ms |
10ms |
0.1s |
1s |
10s |
10us |
|||||||
|
|
|
|
tp / s |
|
|
|
Fig.11. Transient thermal impedance Zth j-hs, versus pulse width tp.
1000 dV/dt (V/us)
off-state dV/dt limit 
BT139...G SERIES
BT139 SERIES
100
BT139...F SERIES
dIcom/dt = |
|
|
|
|
|
20 A/ms |
16 |
12 |
9.3 |
7.2 |
5.6 |
10
1 0 |
50 |
100 |
150 |
|
|
Tj / C |
|
Fig.12. Typical commutation dV/dt versus junction temperature, parameter commutation dIT/dt. The triac should commutate when the dV/dt is below the value on the appropriate curve for pre-commutation dIT/dt.
February 1996 |
5 |
Rev 1.100 |