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Philips Semiconductors Product specification

Triacs

BT139 series H

high noise immunity

GENERAL DESCRIPTION

QUICK REFERENCE DATA

Glass passivated triacs in a plastic

SYMBOL

PARAMETER

MAX.

UNIT

envelope, intended for use in

BT139-

500H

600H

800H

applications

requiring

high noise

immunity in addition to high,

VDRM

Repetitive peak off-state

500

600

800

bidirectional

blocking

voltage

voltages

capability

and

thermal

cycling

IT(RMS)

RMS on-state current

performance. Typical

applications

ITSM

Non-repetitive peak on-state

140

include motor

control,

industrial

current

lighting, heating and static switching.

PINNING - TO220AB

PIN CONFIGURATION

SYMBOL

PIN DESCRIPTION

1main terminal 1

2main terminal 2

3gate

tab main terminal 2

tab
T2	T1
1 2 3	G

LIMITING VALUES

Limiting values in accordance with the Absolute Maximum System (IEC 134).

SYMBOL	PARAMETER	CONDITIONS	MIN.		MAX.		UNIT

				-500	-600	-800
V	Repetitive peak off-state		-	5001	6001	800	V
DRM	voltages
	voltages
		full sine wave; Tmb ≤ 99 ˚C
IT(RMS)	RMS on-state current	full sine wave; Tmb ≤ 99 ˚C	-		16		A
ITSM	Non-repetitive peak	full sine wave; Tj = 125 ˚C prior
	on-state current	to surge; with reapplied VDRM(max)	-		140		A
		t = 20 ms	-		140		A
		t = 16.7 ms	-		150		A
I2t	I2t for fusing	t = 10 ms	-		98		A2s
dIT/dt	Repetitive rate of rise of	ITM = 20 A; IG = 0.2 A;
	on-state current after	dIG/dt = 0.2 A/μs					A/μs
	triggering	T2+ G+	-		50		A/μs
		T2+ G-	-		50		A/μs
		T2- G-	-		50		A/μs
		T2- G+	-		10		A/μs
IGM	Peak gate current		-		2		A
VGM	Peak gate voltage		-		5		V
PGM	Peak gate power		-		5		W
PG(AV)	Average gate power	over any 20 ms period	-		0.5		W
Tstg	Storage temperature		-40		150		˚C
Tj	Operating junction		-		125		˚C
	temperature

1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may switch to the on-state. The rate of rise of current should not exceed 15 A/μs.

February 1996

Rev 1.100

Philips Semiconductors Product specification

Triacs				BT139 series H
high noise immunity

THERMAL RESISTANCES

SYMBOL	PARAMETER	CONDITIONS	MIN.	TYP.	MAX.	UNIT

Rth j-mb	Thermal resistance	full cycle	-	-	1.2	K/W
	junction to mounting base	half cycle	-	-	1.7	K/W
Rth j-a	Thermal resistance	in free air	-	60	-	K/W
	junction to ambient
STATIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL	PARAMETER	CONDITIONS	MIN.	TYP.	MAX.	UNIT

IGT	Gate trigger current	VD = 12 V; IT = 0.1 A	10	14	50	mA
		T2+ G+	10	14	50	mA
		T2+ G-	10	17	50	mA
		T2- G-	10	18	50	mA
		T2- G+	10	40	100	mA
IL	Latching current	VD = 12 V; IGT = 0.1 A	-	10	60	mA
		T2+ G+	-	10	60	mA
		T2+ G-	-	25	90	mA
		T2- G-	-	12	60	mA
		T2- G+	-	14	90	mA
IH	Holding current	VD = 12 V; IGT = 0.1 A	-	8	60	mA
VT	On-state voltage	IT = 20 A	-	1.2	1.6	V
VGT	Gate trigger voltage	VD = 12 V; IT = 0.1 A	-	0.7	1.5	V
		VD = 400 V; IT = 0.1 A; Tj = 125 ˚C	0.25	0.4	-	V
ID	Off-state leakage current	VD = VDRM(max); Tj = 125 ˚C	-	0.1	0.5	mA
DYNAMIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL	PARAMETER	CONDITIONS	MIN.	TYP.	MAX.	UNIT

dVD/dt	Critical rate of rise of
	off-state voltage
dVcom/dt	Critical rate of change of
	commutating voltage
tgt	Gate controlled turn-on
	time

VDM = 67% VDRM(max); Tj = 125 ˚C;	200	500	-	V/μs
exponential waveform; gate open circuit				V/μs
VDM = 400 V; Tj = 95 ˚C; IT(RMS) = 16 A;	10	20	-	V/μs
dIcom/dt = 7.2 A/ms; gate open circuit				μs
ITM = 20 A; VD = VDRM(max); IG = 0.1 A;	-	2	-	μs
dIG/dt = 5 A/μs

February 1996

Rev 1.100

Philips Semiconductors	Product specification

Triacs	BT139 series H
high noise immunity

25	Ptot / W		BT139		Tmb(max) / C 95
25	Ptot / W				Tmb(max) / C 95
					= 180
20					120	101
			1

					90
15					60	107
					60
10					30	113
10						113
5						119
0	0	5	10	15		125
	0	5	10	15		20
			IT(RMS) / A

Fig.1. Maximum on-state dissipation, Ptot, versus rms on-state current, IT(RMS), where α = conduction angle.

1000	ITSM / A		BT139
100
		dIT/dt limit
		T2- G+ quadrant		IT	ITSM
		T2- G+ quadrant
				T	time
10				Tj initial = 125 C max
10		100us	1ms	10ms	100ms
10us		100us	1ms	10ms	100ms
			T / s

Fig.2. Maximum permissible non-repetitive peak on-state current ITSM, versus pulse width tp, for sinusoidal currents, tp ≤ 20ms.

150	ITSM / A		BT139
			IT	ITSM
			T	time
100			Tj initial = 125 C max
			Tj initial = 125 C max
50
0	1	10	100	1000
		Number of cycles at 50Hz

Fig.3. Maximum permissible non-repetitive peak on-state current ITSM, versus number of cycles, for sinusoidal currents, f = 50 Hz.

IT(RMS) / A		BT139
20
			99 C
15
10
5
0	0	50	100	150
-50	0	50	100	150
		Tmb / C

Fig.4. Maximum permissible rms current IT(RMS) , versus mounting base temperature Tmb.

50	IT(RMS) / A	BT139
40
30
20
10
0		0.1	1	10
0.01		0.1	1	10
		surge duration / s

Fig.5. Maximum permissible repetitive rms on-state

current IT(RMS), versus surge duration, for sinusoidal currents, f = 50 Hz; Tmb ≤ 99˚C.

	VGT(Tj)		BT136
1.6	VGT(25 C)		BT136
1.4
1.2
1
0.8
0.6
0.4		0	50	100	150
-50		0	50	100	150
			Tj /	C

Fig.6. Normalised gate trigger voltage VGT(Tj)/ VGT(25˚C), versus junction temperature Tj.

February 1996

Rev 1.100

Philips Semiconductors	Product specification

Triacs	BT139 series H
high noise immunity

IGT(Tj)
IGT(25 C)		BT139H
3			T2+ G+
			T2+ G+
2.5			T2+ G-
2.5			T2- G-
			T2- G-
2			T2- G+
2
1.5
1
0.5
0	0	50	100	150
-50	0	50	100	150
		Tj / C

Fig.7. Normalised gate trigger current IGT(Tj)/ IGT(25˚C), versus junction temperature Tj.

IL(Tj)
IL(25 C)		TRIAC
3
2.5
2
1.5
1
0.5
0	0	50	100	150
-50	0	50	100	150
		Tj / C
Fig.8.	Normalised latching current IL(Tj)/ IL(25˚C),
	versus junction temperature Tj.
IH(Tj)
3 IH(25C)		TRIAC
2.5
2
1.5
1
0.5
0	0	50	100	150
-50	0	50	100	150
		Tj / C

Fig.9. Normalised holding current IH(Tj)/ IH(25˚C), versus junction temperature Tj.

50	IT / A		BT139
50	Tj = 125 C
	Tj = 125 C
40	Tj = 25 C	typ		max
	Tj = 25 C

	Vo = 1.195 V
	Vo = 1.195 V
	Rs = 0.018 Ohms
30
30

0	0.5	1	1.5	2	2.5	3
			VT / V

Fig.10. Typical and maximum on-state characteristic.

10	Zth j-mb (K/W)			BT139
1			unidirectional
					bidirectional
0.1
				P	t p
				D
0.01
							t
0.001		0.1ms	1ms	10ms	0.1s	1s	10s
10us		0.1ms	1ms	10ms	0.1s	1s	10s
				tp / s

Fig.11. Transient thermal impedance Zth j-mb, versus pulse width tp.

1000 dV/dt (V/us)

off-state dV/dt limit

BT139...H SERIES

100

dIcom/dt =
20 A/ms	16	12	9.3	7.2	5.6

1 0	50	100	150
		Tj / C

Fig.12. Typical commutation dV/dt versus junction temperature, parameter commutation dIT/dt. The triac should commutate when the dV/dt is below the value on the appropriate curve for pre-commutation dIT/dt.

February 1996

Rev 1.100

Philips Semiconductors Product specification

	Triacs	BT139 series H
	high noise immunity
	MECHANICAL DATA
	Dimensions in mm	4,5
	Net Mass: 2 g	4,5
	Net Mass: 2 g	max
	10,3
	max	1,3
	3,7	1,3
	3,7
	2,8	5,9
		min

15,8 max

	3,0 max	3,0
	not tinned	3,0
	not tinned

		13,5
		min
1,3
max	1 2 3
(2x)		0,9 max (3x)	0,6
			0,6
	2,54 2,54		2,4
	2,54 2,54

Fig.13. TO220AB; pin 2 connected to mounting base.

Notes

1.Accessories supplied on request: refer to mounting instructions for TO220 envelopes.

2.Epoxy meets UL94 V0 at 1/8".

February 1996

Rev 1.100

Источник: https://studfile.net/preview/16504368/

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