Материал: 9488
DISCRETE SEMICONDUCTORS
OM2070B
Wideband amplifier module
Product specification |
1995 Nov 29 |
Supersedes data of October 1991
File under Discrete Semiconductors, SC16
Philips Semiconductors |
Product specification |
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Wideband amplifier module |
OM2070B |
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DESCRIPTION
A three-stage wideband amplifier in hybrid integrated circuit form on a thin-film substrate. The device is intended for use in mast-head booster amplifiers, as an amplifier in MATV and CATV systems and as a general purpose amplifier for VHF and UHF applications.
PINNING |
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PIN |
DESCRIPTION |
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pin 1 identification |
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1 |
input |
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2 |
common (-) |
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handbook, halfpage |
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3 |
common (-) |
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4 |
common (-) |
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5 |
common (-) |
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1 |
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6 |
supply (+) |
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7 |
common (-) |
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9 8 7 6 |
5 4 3 2 1 |
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MLA418 |
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common (-) |
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Fig.1 |
Simplified outline. |
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9 |
output/supply (+) |
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QUICK REFERENCE DATA |
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SYMBOL |
PARAMETER |
CONDITIONS |
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MIN. |
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TYP. |
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MAX. |
UNIT |
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f |
frequency range |
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40 |
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860 |
MHz |
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ZS, ZL |
source and load impedance |
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- |
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75 |
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W |
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GT |
transducer gain = ïS21ï2 |
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- |
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30 |
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dB |
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DGT |
flatness of frequency response |
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- |
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1 |
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dB |
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Vo(rms) |
output voltage (RMS value) |
dim = -60 dB; |
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3rd order intermodulation (3-tone) |
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VHF |
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113 |
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dBmV |
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UHF |
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112 |
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dBmV |
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F |
noise figure |
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- |
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4.8 |
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dB |
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VB |
DC supply voltage |
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10.8 |
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12 |
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13.2 |
V |
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Tamb |
ambient operating temperature |
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-20 |
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+70 |
°C |
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1995 Nov 29 |
2 |
Philips Semiconductors |
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Product specification |
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Wideband amplifier module |
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OM2070B |
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CIRCUIT DIAGRAM AND PRINTED-CIRCUIT BOARD |
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C1 |
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C3 |
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C6 |
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R3 |
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R8 |
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R13 |
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R1 |
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R6 |
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R11 |
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1 |
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TR1 |
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C2 |
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TR2 |
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C4 |
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TR3 |
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R2 |
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R4 |
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R5 |
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R7 |
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R9 |
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R10 |
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R12 |
R14 |
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2,3,4,5 |
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7,8 |
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C5 |
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6 |
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MGA201 |
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Fig.2 Circuit diagram.
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1 |
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9 |
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1 
(9x)
TOP VIEW
75 Ω |
track |
C |
L |
75 Ω |
track |
C |
MGA202 |
BOTTOM VIEW
L > 5 mH; e.g. catalogue No. 3122 108 20150, or 27 turns enamelled 0.3 mm copper wire wound on a ferrite core with a diameter of 1.6 mm. C > 220 pF ceramic capacitor.
Fig.3 Printed-circuit board holes and tracks.
1995 Nov 29 |
3 |
Philips Semiconductors |
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Product specification |
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Wideband amplifier module |
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OM2070B |
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LIMITING VALUES |
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In accordance with the Absolute Maximum Rating System (IEC 134). |
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SYMBOL |
PARAMETER |
MIN. |
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MAX. |
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UNIT |
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VB |
DC supply voltage |
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- |
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15 |
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V |
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PIM |
peak incident powers on pins 1 and 8 |
- |
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100 |
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mW |
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Tamb |
ambient operating temperature |
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-20 |
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+70 |
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°C |
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Tstg |
storage temperature |
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-40 |
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+125 |
°C |
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CHARACTERISTICS |
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SYMBOL |
PARAMETER |
CONDITIONS |
MIN. |
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TYP. |
MAX. |
UNIT |
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Measuring conditions |
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Tamb |
ambient operating temperature |
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- |
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25 |
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°C |
VB |
DC supply voltage |
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- |
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12 |
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- |
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V |
ZS |
source impedance |
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- |
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75 |
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- |
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W |
ZL |
load impedance |
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- |
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75 |
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W |
Z0 |
characteristic impedance of |
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- |
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75 |
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W |
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HF connections |
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f |
frequency range |
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40 |
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- |
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860 |
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MHz |
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Performance |
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IB |
supply current |
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- |
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100 |
- |
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mA |
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GT |
transducer gain = ïS21ï2 |
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28 |
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30 |
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33 |
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dB |
DGT |
flatness of frequency response |
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- |
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1 |
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dB |
VSWRin |
individual maximum VSWR |
input; note 1 |
- |
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2.7 |
- |
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VSWRout |
individual maximum VSWR |
output; note 1 |
- |
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1.9 |
- |
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ïS12ï2 |
back attenuation |
f = 100 MHz |
- |
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45 |
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- |
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dB |
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f = 860 MHz |
- |
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35 |
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- |
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dB |
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Vo(rms) |
output voltage (RMS value) |
dim = -60 dB; |
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3rd order intermodulation (3-tone) |
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VHF |
111 |
|
113 |
- |
|
dBmV |
|
|
|
UHF |
110 |
|
112 |
- |
|
dBmV |
|
|
|
|
|
|
|
|
|
|
|
F |
noise figure |
|
- |
|
4.8 |
- |
|
dB |
|
|
|
|
|
|
|
|
|
|
|
Operating conditions |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
Tamb |
ambient operating temperature |
|
-20 |
|
- |
|
+70 |
|
°C |
VB |
DC supply voltage |
|
10.8 |
|
12 |
|
13.2 |
|
V |
f |
frequency range |
|
40 |
|
- |
|
860 |
|
MHz |
ZS |
source impedance |
|
- |
|
75 |
|
- |
|
W |
ZL |
load impedance |
|
- |
|
75 |
|
- |
|
W |
Note
1. Highest value (for sample) occurring in the frequency range.
1995 Nov 29 |
4 |
Philips Semiconductors |
Product specification |
|
|
Wideband amplifier module |
OM2070B |
|
|
32 |
|
MCD445 |
|
32 |
|
|
|
MCD444 |
|
|
|
|
|
|
|
||
handbook, halfpage |
|
|
handbook, halfpage |
|
|
|
|
|
S21 |
|
|
S |
2 |
|
|
|
|
(dB) |
|
|
21 |
|
|
|
|
|
|
|
|
(dB) |
|
|
|
|
|
30 |
|
|
|
30 |
|
|
|
(1) |
|
|
|
|
|
|
|
||
|
|
|
|
|
|
|
|
(2) |
|
|
|
|
|
|
|
|
(3) |
28 |
|
|
|
28 |
|
|
|
|
0 |
500 |
1000 |
|
0 |
500 |
f |
(MHz) |
1000 |
|
f |
(MHz) |
|
|
|
|
||
|
(1) |
Maximum gain. |
Gain over entire frequency range. |
(2) |
Average gain. |
|
|
|
Z0 = 75 Ω. |
(3) |
Minimum gain. |
Fig.4 Transducer gain as a function of frequency. |
|
Fig.5 Power gain. |
1995 Nov 29 |
5 |