Материал: 9486
DISCRETE SEMICONDUCTORS
OM2052
Wideband amplifier module
Product specification |
1995 Nov 28 |
Supersedes data of November 1991
File under Discrete Semiconductors, SC16
Philips Semiconductors |
Product specification |
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Wideband amplifier module |
OM2052 |
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DESCRIPTION
A two-stage wideband amplifier in hybrid integrated circuit form on a thin-film substrate. The device is intended as an
amplifier in MATV and CATV systems.
PINNING
PIN |
DESCRIPTION |
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1 |
input |
2 |
common (-) |
3 |
common (-) |
4 |
common (-) |
5 |
not connected |
6 |
common (-) |
7 |
output/supply (+) |
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handbook, halfpage |
pin 1 identification |
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1
7 |
6 |
4 |
3 |
2 |
1 |
MLA420 |
Fig.1 Simplified outline.
QUICK REFERENCE DATA
SYMBOL |
PARAMETER |
CONDITIONS |
MIN. |
TYP. |
MAX. |
UNIT |
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f |
frequency range |
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40 |
- |
860 |
MHz |
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ZS, ZL |
source and load impedance |
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- |
75 |
- |
W |
GT |
transducer gain = ïS21ï2 |
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- |
28 |
- |
dB |
DGT |
flatness of frequency response |
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- |
1 |
- |
dB |
Vo(rms) |
output voltage (RMS value) |
dim = -60 dB; |
- |
107 |
- |
dBmV |
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3rd order intermodulation (3-tone) |
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F |
noise figure |
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- |
4.5 |
- |
dB |
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VB |
DC supply voltage |
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10.8 |
12 |
13.2 |
V |
Tamb |
ambient operating temperature |
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-20 |
- |
+70 |
°C |
1995 Nov 28 |
2 |
Philips Semiconductors |
Product specification |
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Wideband amplifier module |
OM2052 |
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CIRCUIT DIAGRAM AND PRINTED-CIRCUIT BOARD |
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C1 |
R1 |
R4 |
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7 |
1 |
TR1 |
TR2 |
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R3 |
R8 |
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R5 |
R7 |
R2
C3
2, 3, 4, 6
MCD498
Fig.2 Circuit diagram.
handbook, halfpage
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top view |
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L |
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75 Ω |
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75 Ω |
track |
C |
C |
track |
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bottom view |
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MCD497 |
L > 5 mH; e.g. catalogue No. 3122 108 20150, or 27 turns enamelled 0.3 mm copper wire wound on a ferrite core with a diameter of 1.6 mm. C > 220 pF ceramic capacitor.
Fig.3 Printed-circuit board holes and tracks.
1995 Nov 28 |
3 |
Philips Semiconductors |
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Product specification |
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Wideband amplifier module |
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OM2052 |
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LIMITING VALUES |
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In accordance with the Absolute Maximum Rating System (IEC 134). |
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SYMBOL |
PARAMETER |
MIN. |
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MAX. |
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UNIT |
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VB |
DC supply voltage |
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- |
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15 |
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V |
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PIM |
peak incident powers on pins 1 and 8 |
- |
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100 |
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mW |
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Tamb |
ambient operating temperature |
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-20 |
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+70 |
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°C |
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Tstg |
storage temperature |
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-40 |
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+125 |
°C |
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CHARACTERISTICS |
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SYMBOL |
PARAMETER |
CONDITIONS |
MIN. |
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TYP. |
MAX. |
UNIT |
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Measuring conditions |
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Tamb |
ambient operating temperature |
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- |
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25 |
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- |
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°C |
VB |
DC supply voltage |
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11.9 |
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12 |
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12.1 |
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V |
ZS |
source impedance |
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- |
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75 |
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- |
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W |
ZL |
load impedance |
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- |
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75 |
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- |
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W |
Z0 |
characteristic impedance of |
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- |
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75 |
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- |
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W |
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HF connections |
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f |
frequency range |
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40 |
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- |
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860 |
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MHz |
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Performance |
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IB |
supply current |
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38 |
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42 |
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44 |
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mA |
GT |
transducer gain = ïS21ï2 |
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26 |
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28 |
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29 |
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dB |
DGT |
flatness of frequency response |
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- |
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1 |
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- |
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dB |
VSWRin |
individual maximum VSWR |
input; note 1 |
- |
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2.2 |
- |
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VSWRout |
individual maximum VSWR |
output; note 1 |
- |
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2.1 |
- |
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ïS12ï2 |
back attenuation |
f = 100 MHz |
- |
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36 |
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- |
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dB |
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f = 860 MHz |
- |
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29 |
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- |
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dB |
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Vo(rms) |
output voltage (RMS value) |
dim = -60 dB; |
- |
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107 |
- |
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dBmV |
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3rd order intermodulation (3-tone) |
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F |
noise figure |
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- |
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4.5 |
- |
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dB |
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Operating conditions |
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Tamb |
ambient operating temperature |
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-20 |
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- |
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+70 |
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°C |
VB |
DC supply voltage |
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10.8 |
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12 |
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13.2 |
|
V |
f |
frequency range |
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40 |
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- |
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860 |
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MHz |
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ZS |
source impedance |
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- |
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75 |
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- |
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W |
ZL |
load impedance |
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- |
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75 |
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- |
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W |
Note
1. Highest value (for sample) occurring in the frequency range.
1995 Nov 28 |
4 |
Philips Semiconductors |
Product specification |
|
|
Wideband amplifier module |
OM2052 |
|
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MCD450
|
32 |
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S |
21 |
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2 |
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(dB) |
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30 |
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28 |
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26 |
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24 |
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22 |
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0 |
200 |
400 |
600 |
800 |
1000 |
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f |
(MHz) |
Gain over entire frequency range.
Z0 = 75 Ω.
Fig.4 Transducer gain as a function of frequency.
1995 Nov 28 |
5 |