Материал: 9111
Philips Semiconductors |
Product specification |
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Silicon Diffused Power Transistor |
BU2508A |
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GENERAL DESCRIPTION
Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic envelope intended for use in horizontal deflection circuits of colour television receivers. Features exceptional tolerance to base drive and collector current load variations resulting in a very low worst case dissipation.
QUICK REFERENCE DATA
SYMBOL |
PARAMETER |
CONDITIONS |
TYP. |
MAX. |
UNIT |
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VCESM |
Collector-emitter voltage peak value |
VBE = 0 V |
- |
1500 |
V |
VCEO |
Collector-emitter voltage (open base) |
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700 |
V |
IC |
Collector current (DC) |
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- |
8 |
A |
ICM |
Collector current peak value |
Tmb ≤ 25 ˚C |
- |
15 |
A |
Ptot |
Total power dissipation |
- |
125 |
W |
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VCEsat |
Collector-emitter saturation voltage |
IC = 4.5 A; IB = 1.29 A |
- |
1.0 |
V |
VCEsat |
Collector-emitter saturation voltage |
IC = 4.5 A; IB = 1.1 A |
- |
5.0 |
V |
ICsat |
Collector saturation current |
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4.5 |
- |
A |
tf |
Fall time |
ICM = 4.5 A; IB(end) = 1.1 A |
0.4 |
0.6 |
μs |
PINNING - SOT93 |
PIN CONFIGURATION |
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PIN |
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DESCRIPTION |
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tab |
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base |
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collector |
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tab |
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collector |
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LIMITING VALUES |
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Limiting values in accordance with the Absolute Maximum Rating System (IEC 134) |
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SYMBOL |
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PARAMETER |
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CONDITIONS |
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MIN. |
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MAX. |
UNIT |
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VCESM |
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Collector-emitter voltage peak value |
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VBE = 0 V |
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- |
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1500 |
V |
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VCEO |
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Collector-emitter voltage (open base) |
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- |
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700 |
V |
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IC |
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Collector current (DC) |
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- |
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8 |
A |
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ICM |
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Collector current peak value |
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15 |
A |
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IB |
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Base current (DC) |
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- |
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4 |
A |
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IBM |
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Base current peak value |
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- |
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6 |
A |
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-IB(AV) |
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Reverse base current |
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average over any 20 ms period |
- |
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100 |
mA |
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-I |
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Reverse base current peak value 1 |
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- |
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5 |
A |
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BM |
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Tmb ≤ 25 ˚C |
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Ptot |
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Total power dissipation |
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- |
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125 |
W |
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Tstg |
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Storage temperature |
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-65 |
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150 |
˚C |
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Tj |
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Junction temperature |
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- |
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150 |
˚C |
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THERMAL RESISTANCES |
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SYMBOL |
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PARAMETER |
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CONDITIONS |
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TYP. |
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MAX. |
UNIT |
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Rth j-mb |
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Junction to mounting base |
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- |
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- |
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1.0 |
K/W |
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Rth j-a |
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Junction to ambient |
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in free air |
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45 |
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- |
K/W |
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1 Turn-off current.
November 1995 |
1 |
Rev 1.300 |
Philips Semiconductors |
Product specification |
|
|
Silicon Diffused Power Transistor |
BU2508A |
|
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STATIC CHARACTERISTICS
Tmb = 25 ˚C unless otherwise specified
SYMBOL |
PARAMETER |
CONDITIONS |
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MIN. |
TYP. |
MAX. |
UNIT |
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I |
Collector cut-off current 2 |
V = |
0 V; V |
CE |
= V |
CESMmax |
- |
- |
1.0 |
mA |
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CES |
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BE |
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ICES |
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VBE = |
0 V; VCE = VCESMmax; |
- |
- |
2.0 |
mA |
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Tj = 125 ˚C |
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IEBO |
Emitter cut-off current |
VEB = |
7.5 V; IC = 0 A |
- |
- |
1.0 |
mA |
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BVEBO |
Emitter-base breakdown voltage |
IB = 1 mA |
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7.5 |
13.5 |
- |
V |
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VCEOsust |
Collector-emitter sustaining voltage |
IB = 0 A; IC = 100 mA; |
700 |
- |
- |
V |
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L = 25 mH |
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VCEsat |
Collector-emitter saturation voltages |
IC = 4.5 |
A; IB = |
1.1 |
A |
- |
- |
5.0 |
V |
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VCEsat |
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IC = 4.5 |
A; IB = |
1.29 A |
- |
- |
1.0 |
V |
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VBEsat |
Base-emitter saturation voltage |
IC = 4.5 |
A; IB = |
1.7 |
A |
- |
- |
1.3 |
V |
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hFE |
DC current gain |
IC = 100 mA; VCE = 5 V |
6 |
13 |
26 |
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hFE |
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IC = 4.5 |
A; VCE = 1 |
V |
4 |
5.5 |
7.5 |
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DYNAMIC CHARACTERISTICS
Tmb = 25 ˚C unless otherwise specified
SYMBOL |
PARAMETER |
CONDITIONS |
TYP. |
MAX. |
UNIT |
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Cc |
Collector capacitance |
IE = 0 A; VCB = 10 V; f = 1 MHz |
80 |
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pF |
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Switching times (16 kHz line |
ICM = 4.5 A; IB(end) = 1.1 A; LB = 6 μH; |
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ts |
deflection circuit) |
-VBB = 4 V; (-dIB/dt = 0.6 A/μs) |
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μs |
Turn-off storage time |
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5.0 |
6.0 |
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tf |
Turn-off fall time |
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0.4 |
0.6 |
μs |
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Switching times (38 kHz line |
ICM = 4.0 A; IB(end) = 0.9 A; LB = 6 μH; |
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deflection circuit) |
-VBB = 4 V; (-dIB/dt = 0.6 A/μs) |
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μs |
ts |
Turn-off storage time |
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4.7 |
5.7 |
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tf |
Turn-off fall time |
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0.25 |
0.35 |
μs |
+ 50v 100-200R
Horizontal
Oscilloscope
Vertical
100R |
1R |
6V
30-60 Hz
Fig.1. Test circuit for VCEOsust.
IC / mA
250 
200 
100 
0
VCE / V |
min |
VCEOsust
Fig.2. Oscilloscope display for VCEOsust.
2 Measured with half sine-wave voltage (curve tracer).
November 1995 |
2 |
Rev 1.300 |
Philips Semiconductors |
Product specification |
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Silicon Diffused Power Transistor |
BU2508A |
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BU2508A |
ICM |
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IC |
DIODE |
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t |
IB |
IBend |
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t |
20us |
26us |
64us
VCE
t
Fig.3. Switching times waveforms.
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ICM |
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90 % |
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IC |
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10 % |
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tf |
t |
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ts |
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IB |
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IBend |
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t |
- IBM
Fig.4. Switching times definitions.
+ 150 v nominal adjust for ICM
1mH
IBend |
LB |
BU2508A |
BY228 |
12nF
-VBB
Fig.5. Switching times test circuit (BU2508A).
h FE |
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100 |
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5V |
10 |
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1V |
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Tj = 25 C |
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Tj = 125 C |
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1 |
0.1 |
1 |
10 |
0.01 |
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IC / A |
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Fig.6. Typical DC current gain. hFE = f (IC) parameter VCE
1.2 |
VBESAT / V |
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BU2508A |
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1.1 |
Tj = 25 C |
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Tj = 125 C |
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1 |
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0.9 |
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0.8 |
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IC/IB= |
0.7 |
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3 |
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4 |
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0.6 |
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5 |
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0.5 |
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0.4 |
0.1 |
1 |
10 |
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IC / A |
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Fig.7. Typical base-emitter saturation voltage. |
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VBEsat = f (IC); parameter IC/IB |
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1 |
VCESAT / V |
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BU2508A |
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0.9 |
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IC/IB= |
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0.8 |
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5 |
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0.7 |
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4 |
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0.6 |
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3 |
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0.5 |
Tj = 25 C |
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0.4 |
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Tj = 125 C |
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0.3 |
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0.2 |
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0.1 |
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0 |
0.1 |
1 |
10 |
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IC / A |
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Fig.8. Typical collector-emitter saturation voltage. VCEsat = f (IC); parameter IC/IB
November 1995 |
3 |
Rev 1.300 |
Philips Semiconductors |
Product specification |
|
|
Silicon Diffused Power Transistor |
BU2508A |
|
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1.2 |
VBESAT / V |
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BU2508A |
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Tj = 25 C |
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1.1 |
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Tj = 125 C |
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1 |
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0.9 |
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IC= |
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6A |
0.8 |
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4.5A |
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3A |
0.7 |
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2A |
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0.6 |
0 |
1 |
2 |
3 |
4 |
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IB / A |
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Fig.9. Typical base-emitter saturation voltage. VBEsat = f (IB); parameter IC
VCESAT / V |
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BU2508A |
10 |
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Tj = 25 C |
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Tj = 125 C |
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6A |
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4.5A |
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1 |
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3A |
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IC=2A |
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0.1 |
1 |
10 |
0.1 |
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IB / A |
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Fig.10. Typical collector-emitter saturation voltage. VCEsat = f (IB); parameter IC
1000 |
Eoff / uJ |
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BU2508A |
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IC = 4.5A |
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3.5A |
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100 |
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10 |
0.1 |
1 |
10 |
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IB / A |
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Fig.11. Typical turn-off losses. Tj = 85˚C Eoff = f (IB); parameter IC; f = 16 kHz
12 |
ts, tf / us |
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BU2508A |
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11 |
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ts |
10 |
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9 |
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8 |
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6 |
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5 |
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IC = |
4 |
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3 |
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3.5A |
4.5A |
2 |
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tf |
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1 |
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0 |
0.1 |
1 |
10 |
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IB / A |
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Fig.12. Typical collector storage and fall time. |
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ts = f (IB); tf = f (IB); parameter IC; Tj = 85˚C; f = 16 kHz |
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10 |
Zth / (K/W) |
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1 |
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0.5 |
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0.2 |
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0.1 |
0.1 |
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tp |
0.05 |
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P |
tp |
D = |
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0.02 |
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D |
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T |
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D = 0 |
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T |
t |
0.01 |
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1E-06 |
1E-04 |
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1E-02 |
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1E+00 |
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t / s |
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Fig.13. |
Transient thermal impedance. |
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Zth j-mb = f(t); parameter D = tp/T |
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120 |
PD% |
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Normalised Power Derating |
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110 |
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100 |
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90 |
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80 |
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70 |
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60 |
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50 |
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40 |
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30 |
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20 |
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10 |
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0 |
0 |
20 |
40 |
60 |
80 |
100 |
120 |
140 |
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Tmb / |
C |
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Fig.14. |
Normalised power dissipation. |
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PD% = 100×PD/PD 25˚C = f (Tmb) |
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November 1995 |
4 |
Rev 1.300 |
Philips Semiconductors |
Product specification |
|
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Silicon Diffused Power Transistor |
BU2508A |
|
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IC / A |
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100 |
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= 0.01 |
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ICM max |
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tp = |
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|
10 |
IC max |
|
5 us |
|
|
|
|
|
(1) |
II |
10 |
|
|
|
|
|
|
|
20 |
1 |
I |
|
50 |
|
|
100 |
|
|
|
|
|
|
|
|
200 |
|
|
|
500 |
|
|
(2) |
1 ms |
0.1 |
|
2 |
|
|
|
||
|
|
|
|
|
|
|
5 |
|
|
|
10 |
|
|
|
20 |
|
|
|
DC |
0.01 |
|
|
|
1 |
10 |
100 |
1000 |
|
|
VCE / V |
|
Fig.15. Forward bias safe operating area. Tmb = 25˚C
(1)Ptot max line.
(2)Second-breakdown limits
(independent of temperature). I Region of DC operation.
II Extension for repetitive pulse operation.
November 1995 |
5 |
Rev 1.300 |