Материал: 2N6040RE
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by 2N6040/D
Plastic Medium-Power
Complementary Silicon Transistors
. . . designed for general±purpose amplifier and low±speed switching applications.
• High DC Current Gain Ð
hFE = 2500 (Typ) @ IC = 4.0 Adc
• Collector±Emitter Sustaining Voltage Ð @ 100 mAdc Ð
VCEO(sus) = 60 Vdc (Min) Ð 2N6040, 2N6043
VCEO(sus) = 80 Vdc (Min) Ð 2N6041, 2N6044
VCEO(sus) = 100 Vdc (Min) Ð 2N6042, 2N6045
• Low Collector±Emitter Saturation Voltage Ð
VCE(sat) = 2.0 Vdc (Max) @ IC = 4.0 Adc Ð 2N6040,41, 2N6043,44 VCE(sat) = 2.0 Vdc (Max) @ IC = 3.0 Adc Ð 2N6042, 2N6045
• Monolithic Construction with Built±In Base±Emitter Shunt Resistors
PNP
2N6040 thru
2N6042*
NPN
2N6043
thru 2N6045*
*Motorola Preferred Device
MAXIMUM RATINGS (1) |
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DARLINGTON |
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2N6040 |
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2N6041 |
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2N6042 |
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Rating |
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2N6043 |
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2N6044 |
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2N6045 |
Unit |
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8 AMPERE |
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COMPLEMENTARY |
Collector±Emitter Voltage |
VCEO |
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60 |
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80 |
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100 |
Vdc |
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SILICON |
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Collector±Base Voltage |
VCB |
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60 |
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80 |
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100 |
Vdc |
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POWER TRANSISTORS |
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Emitter±Base Voltage |
VEB |
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5.0 |
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Vdc |
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60 ± 80 ± 100 VOLTS |
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Collector Current Ð Continuous |
IC |
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8.0 |
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Adc |
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75 WATTS |
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Peak |
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16 |
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Base Current |
IB |
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120 |
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mAdc |
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Total Power Dissipation @ TC = 25_C |
PD |
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75 |
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Watts |
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Derate above 25_C |
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0.60 |
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W/_C |
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Total Power Dissipation @ TA = 25_C |
PD |
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2.2 |
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Watts |
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Derate above 25_C |
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0.0175 |
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W/_C |
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Operating and Storage Junction, |
TJ, Tstg |
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± 65 to +150 |
_C |
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Temperature Range |
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THERMAL CHARACTERISTICS |
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Characteristic |
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Symbol |
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Max |
Unit |
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Thermal Resistance, Junction to Case |
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θJC |
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1.67 |
_C/W |
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Thermal Resistance, Junction to Ambient |
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θJA |
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57 |
_C/W |
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CASE 221A±06 |
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(1) Indicates JEDEC Registered Data. |
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TO±220AB |
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TA |
TC |
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4.0 |
80 |
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(WATTS) |
3.0 |
60 |
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DISSIPATION |
2.0 |
40 |
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TC |
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, POWER |
1.0 |
20 |
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TA |
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D |
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P |
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0 |
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20 |
40 |
60 |
80 |
100 |
120 |
140 |
160 |
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0 |
T, TEMPERATURE (°C)
Figure 1. Power Derating
Preferred devices are Motorola recommended choices for future use and best overall value.
Motorola, Inc. 1995
2N6040 thru 2N6042 2N6043 thru 2N6045
*ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
Characteristic |
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Symbol |
Min |
Max |
Unit |
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OFF CHARACTERISTICS |
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Collector±Emitter Sustaining Voltage |
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VCEO(sus) |
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Vdc |
(IC = 100 mAdc, IB = 0) |
2N6040, 2N6043 |
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60 |
Ð |
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2N6041, 2N6044 |
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80 |
Ð |
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2N6042, 2N6045 |
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100 |
Ð |
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Collector Cutoff Current |
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ICEO |
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μA |
(VCE = 60 Vdc, IB = 0) |
2N6040, 2N6043 |
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20 |
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(VCE = 80 Vdc, IB = 0) |
2N6041, 2N6044 |
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Ð |
20 |
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(VCE = 100 Vdc, IB = 0) |
2N6042, 2N6045 |
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20 |
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Collector Cutoff Current |
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ICEX |
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μA |
(VCE = 60 Vdc, VBE(off) = 1.5 Vdc) |
2N6040, 2N6043 |
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20 |
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(VCE = 80 Vdc, VBE(off) = 1.5 Vdc) |
2N6041, 2N6044 |
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20 |
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(VCE = 100 Vdc, VBE(off) = 1.5 Vdc) |
2N6042, 2N6045 |
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20 |
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(VCE = 60 Vdc, VBE(off) = 1.5 Vdc, TC = 150_C) |
2N6040, 2N6043 |
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200 |
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(VCE = 80 Vdc, VBE(off) = 1.5 Vdc, TC = 150_C) |
2N6041, 2N6044 |
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200 |
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(VCE = 100 Vdc, VBE(off) = 1.5 Vdc, TC = 150_C) |
2N6042, 2N6045 |
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200 |
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Collector Cutoff Current |
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ICBO |
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μA |
(VCB = 60 Vdc, IE = 0) |
2N6040, 2N6043 |
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Ð |
20 |
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(VCB = 80 Vdc, IE = 0) |
2N6041, 2N6044 |
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Ð |
20 |
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(VCB = 100 Vdc, IE = 0) |
2N6042, 2N6045 |
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Ð |
20 |
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Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0) |
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IEBO |
Ð |
2.0 |
mAdc |
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ON CHARACTERISTICS |
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DC Current Gain |
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hFE |
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Ð |
(IC = 4.0 Adc, VCE = 4.0 Vdc) |
2N6040, 41, 2N6043, 44 |
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1000 |
20.000 |
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(IC = 3.0 Adc, VCE = 4.0 Vdc) |
2N6042, 2N6045 |
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1000 |
20,000 |
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(IC = 8.0 Adc, VCE = 4.0 Vdc) |
All Types |
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100 |
Ð |
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Collector±Emitter Saturation Voltage |
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VCE(sat) |
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Vdc |
(IC = 4.0 Adc, IB = 16 mAdc) |
2N6040, 41, 2N6043, 44 |
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Ð |
2.0 |
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(IC = 3.0 Adc, IB = 12 mAdc) |
2N6042, 2N6045 |
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Ð |
2.0 |
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(IC = 8.0 Adc, IB = 80 Adc) |
All Types |
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Ð |
4.0 |
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Base±Emitter Saturation Voltage (IC = 8.0 Adc, IB = 80 mAdc) |
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VBE(sat) |
Ð |
4.5 |
Vdc |
Base±Emitter On Voltage (IC = 4.0 Adc, VCE = 4.0 Vdc) |
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VBE(on) |
Ð |
2.8 |
Vdc |
DYNAMIC CHARACTERISTICS |
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Small Signal Current Gain (IC = 3.0 Adc, VCE = 4.0 Vdc, f = 1.0 MHz) |
|hfe| |
4.0 |
Ð |
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Output Capacitance |
2N6040/2N6042 |
Cob |
Ð |
300 |
pF |
(VCB = 10 Vdc, IE = 0, f = 0.1 MHz) |
2N6043/2N6045 |
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200 |
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Small±Signal Current Gain (IC = 3.0 Adc, VCE = 4.0 Vdc, f = 1.0 kHz) |
hfe |
300 |
Ð |
Ð |
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* Indicates JEDEC Registered Data.
RB & RC VARIED TO OBTAIN DESIRED CURRENT LEVELS |
VCC |
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± 30 V |
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D1 MUST BE FAST RECOVERY TYPE, eg: |
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1N5825 USED ABOVE IB ≈ 100 mA |
RC |
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MSD6100 USED BELOW IB ≈ 100 mA |
SCOPE |
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TUT |
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V2 |
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R |
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approx |
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B |
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+ 8.0 |
V |
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0 |
51 |
D1 |
≈ 8.0 k |
≈ 120 |
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V1 |
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+ 4.0 V |
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approx |
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±12 V |
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25 |
μs |
for td and tr, D1 is disconnected |
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tr, tf ≤ 10 ns |
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and V2 = 0 |
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For NPN test circuit reverse all polarities and D1. |
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DUTY CYCLE = 1.0% |
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Figure 2. Switching Times Equivalent Circuit
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5.0 |
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3.0 |
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ts |
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2.0 |
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1.0 |
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tf |
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μs) |
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0.7 |
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t, TIME |
0.5 |
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0.3 |
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tr |
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VCC = 30 V |
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0.2 |
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I |
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= 250 |
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C B |
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0.1 |
IB1 = IB2 |
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TJ = 25°C |
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0.07 |
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PNP |
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td @ VBE(off) = 0 V |
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0.05 |
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NPN |
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0.2 |
0.3 |
0.5 |
0.7 |
1.0 |
2.0 |
3.0 |
5.0 |
7.0 |
10 |
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0.1 |
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IC, COLLECTOR CURRENT (AMP)
Figure 3. Switching Times
2 |
Motorola Bipolar Power Transistor Device Data |
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2N6040 |
thru |
2N6042 |
2N6043 |
thru |
2N6045 |
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1.0 |
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THERMAL RESISTANCE (NORMALIZED) |
0.7 |
D = 0.5 |
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0.5 |
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r(t), EFFECTIVE TRANSIENT |
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0.3 |
0.2 |
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0.2 |
0.1 |
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θJC(t) = r(t) θJC |
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P(pk) |
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0.1 |
0.05 |
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θJC = 1.67°C/W |
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0.07 |
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D CURVES APPLY FOR POWER |
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0.02 |
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PULSE TRAIN SHOWN |
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t1 |
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0.05 |
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READ TIME AT t1 |
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t |
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0.03 |
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0.01 |
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TJ(pk) ± TC = P(pk) θJC(t) |
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2 |
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DUTY CYCLE, D = t1/t2 |
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SINGLE PULSE |
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0.02 |
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0.01 |
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0.01 |
0.02 0.03 |
0.05 |
0.1 |
0.2 |
0.3 |
0.5 |
1.0 |
2.0 |
3.0 |
5.0 |
10 |
20 |
30 |
50 |
100 |
200 |
300 |
500 |
1000 |
t, TIME OR PULSE WIDTH (ms)
Figure 4. Thermal Response
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20 |
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100 μs |
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10 |
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(AMP) |
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5.0 |
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500 μs |
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CURRENT |
2.0 |
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1.0 ms |
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dc |
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TJ = 150°C |
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5.0 ms |
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1.0 |
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BONDING WIRE LIMITED |
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COLLECTOR |
0.5 |
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THERMALLY LIMITED @ TC = 25°C |
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(SINGLE PULSE) |
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0.2 |
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SECOND BREAKDOWN LIMITED |
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0.1 |
CURVES APPLY BELOW RATED VCEO |
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, |
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2N6040, 2N6043 |
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C |
0.05 |
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I |
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2N6041, 2N6044 |
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0.02 |
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2N6045 |
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2.0 |
3.0 |
5.0 |
7.0 |
10 |
20 |
30 |
50 |
70 |
100 |
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1.0 |
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VCE, COLLECTOR±EMITTER VOLTAGE (VOLTS) |
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Figure 5. Active±Region Safe Operating Area
There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC ± VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate.
The data of Figure 5 is based on TJ(pk) = 150_C; TC is variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided TJ(pk) < 150_C. TJ(pk) may be calculated from the data in Figure 4. At high case temperatures, thermal limitations will reduce the
power that can be handled to values less than the limitations imposed by second breakdown.
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10,000 |
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300 |
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GAIN |
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5000 |
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TJ = 25°C |
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3000 |
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200 |
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|
, SMALL±SIGNAL CURRENT |
|
2000 |
|
|
|
|
|
|
|
|
C, CAPACITANCE (pF) |
|
|
|
|
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1000 |
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||
|
500 |
|
TC = 25°C |
|
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Cob |
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|||
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100 |
|
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|
|||||
|
300 |
|
VCE = 4.0 Vdc |
|
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|||||
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||||||
|
200 |
|
IC = 3.0 Adc |
|
|
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|
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|
Cib |
|
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|||
|
100 |
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70 |
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|
50 |
|
PNP |
|
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|
50 |
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||
fe |
30 |
|
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PNP |
|
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||
|
NPN |
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h |
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20 |
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NPN |
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10 |
2.0 |
5.0 |
10 |
20 |
50 |
100 |
200 |
500 |
1000 |
30 |
0.2 |
0.5 |
1.0 |
2.0 |
5.0 |
10 |
20 |
50 |
100 |
|
|
1.0 |
0.1 |
||||||||||||||||||
f, FREQUENCY (kHz) |
VR, REVERSE VOLTAGE (VOLTS) |
Figure 6. Small±Signal Current Gain |
Figure 7. Capacitance |
Motorola Bipolar Power Transistor Device Data |
3 |
2N6040 |
thru |
2N6042 |
2N6043 |
thru |
2N6045 |
||||||||
|
|
|
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PNP |
|
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|
2N6040, 2N6041, 2N6042 |
|
|
|
|||||
|
20,000 |
|
|
|
|
|
|
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10,000 |
|
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|
VCE = 4.0 V |
|
|||
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|
||
GAIN |
|
7000 |
|
|
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|
5000 |
TJ = 150°C |
|
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|
||
, DC CURRENT |
|
|
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||
|
3000 |
|
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2000 |
|
25°C |
|
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|
1000 |
|
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FE |
700 |
|
|
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|
h |
|
|
± 55°C |
|
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500 |
|
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300 |
|
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|
200 |
|
0.2 |
0.3 |
0.5 |
0.7 |
1.0 |
2.0 |
3.0 |
5.0 |
7.0 |
10 |
|
|
0.1 |
|
||||||||||
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|
IC, COLLECTOR CURRENT (AMP) |
|
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|||||
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|
NPN |
|
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|
2N6043, 2N6044, 2N6045 |
|
|
|
|||||
|
20,000 |
|
|
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|
10,000 |
|
|
|
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|
|
|
VCE = 4.0 V |
|
||
|
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|
||
GAIN |
|
7000 |
|
|
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|
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|
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|
|
|
|
5000 |
TJ = 150°C |
|
|
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|
CURRENT |
|
|
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3000 |
|
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|
2000 |
|
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|
25°C |
|
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|
, DC |
|
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|
1000 |
|
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|
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|
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|
FE |
700 |
|
|
|
|
|
|
|
|
|
|
|
h |
|
± 55°C |
|
|
|
|
|
|
|
|
|
|
|
|
500 |
|
|
|
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|
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|
300 |
|
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|
200 |
0.2 |
0.3 |
0.5 |
0.7 |
1.0 |
2.0 |
3.0 |
5.0 |
7.0 |
10 |
|
|
0.1 |
||||||||||
|
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|
|
IC, COLLECTOR CURRENT (AMP) |
|
|
|
|||||
Figure 8. DC Current Gain
(VOLTS) |
3.0 |
|
|
|
|
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|
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|
|
|
TJ = 25°C |
|
|
VOLTAGE |
2.6 |
|
|
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|
IC = 2.0 A |
4.0 A |
|
6.0 A |
|
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|
|||
2.2 |
|
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|
, COLLECTOR±EMITTER |
|
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1.8 |
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1.4 |
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CE |
1.0 |
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|
V |
0.5 |
0.7 |
1.0 |
2.0 |
3.0 |
5.0 |
7.0 |
10 |
20 |
30 |
|
|
0.3 |
||||||||||
|
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|
IB, BASE CURRENT (mA) |
|
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|
|||
(VOLTS) |
3.0 |
|
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|
|
TJ = 25°C |
|
|
VOLTAGE |
2.6 |
|
|
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|
|
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|
|
IC = 2.0 A |
|
4.0 A |
|
6.0 A |
|
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|
||
2.2 |
|
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|
, COLLECTOR±EMITTER |
|
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1.8 |
|
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1.4 |
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CE |
1.0 |
|
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|
V |
0.5 |
0.7 |
1.0 |
2.0 |
3.0 |
5.0 |
7.0 |
10 |
20 |
30 |
|
|
0.3 |
||||||||||
|
|
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|
|
IB, BASE CURRENT (mA) |
|
|
|
|||
Figure 9. Collector Saturation Region
|
3.0 |
|
|
|
|
|
|
|
|
|
|
|
|
TJ = 25°C |
|
|
|
|
|
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|
|
2.5 |
|
|
|
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|
|
|
|
|
|
(VOLTS) |
2.0 |
|
|
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|
|
V, VOLTAGE |
1.5 |
VBE @ VCE = 4.0 V |
|
|
|
|
|
|
|
||
|
VBE(sat) @ IC/IB = 250 |
|
|
|
|
|
|
||||
|
1.0 |
|
|
|
|
|
|
||||
|
|
|
|
|
|
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|
|
|
|
|
|
0.5 |
|
|
VCE(sat) @ IC/IB = 250 |
|
|
|
|
|||
|
0.2 |
0.3 |
0.5 |
0.7 |
1.0 |
2.0 |
3.0 |
5.0 |
7.0 |
10 |
|
|
0.1 |
||||||||||
|
|
|
IC, COLLECTOR CURRENT (AMP) |
|
|
|
|||||
|
3.0 |
|
|
|
|
|
|
|
|
|
|
|
|
TJ = 25°C |
|
|
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|
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|
2.5 |
|
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|
(VOLTS) |
2.0 |
|
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|
|
V, VOLTAGE |
1.5 |
VBE(sat) @ IC/IB = 250 |
|
|
|
|
|
|
|
||
|
VBE @ VCE = 4.0 V |
|
|
|
|
|
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|
|||
|
1.0 |
|
|
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|
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|
|||
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|
|
VCE(sat) @ IC/IB = 250 |
|
|
|
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|
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|
|||
|
0.5 |
0.2 |
0.3 |
0.5 |
0.7 |
1.0 |
2.0 |
3.0 |
5.0 |
7.0 |
10 |
|
0.1 |
||||||||||
IC, COLLECTOR CURRENT (AMP)
Figure 10. ªOnº Voltages
4 |
Motorola Bipolar Power Transistor Device Data |
2N6040 thru 2N6042 2N6043 thru 2N6045
PACKAGE DIMENSIONS
|
|
|
|
±T± |
|
B |
|
F |
C |
|
|
|
T |
S |
4 |
|
|
|
|
Q |
|
|
A |
|
1 |
2 |
3 |
U |
|
H |
|
|
|
|
Z |
|
|
K |
|
|
|
|
|
|
L |
|
|
|
R |
V |
|
|
|
J |
G |
|
|
|
|
|
|
|
D |
|
|
N |
|
|
|
SEATING PLANE
NOTES:
1.DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2.CONTROLLING DIMENSION: INCH.
3.DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED.
|
INCHES |
MILLIMETERS |
||
DIM |
MIN |
MAX |
MIN |
MAX |
A |
0.570 |
0.620 |
14.48 |
15.75 |
B |
0.380 |
0.405 |
9.66 |
10.28 |
C |
0.160 |
0.190 |
4.07 |
4.82 |
D |
0.025 |
0.035 |
0.64 |
0.88 |
F |
0.142 |
0.147 |
3.61 |
3.73 |
G |
0.095 |
0.105 |
2.42 |
2.66 |
H |
0.110 |
0.155 |
2.80 |
3.93 |
J |
0.018 |
0.025 |
0.46 |
0.64 |
K |
0.500 |
0.562 |
12.70 |
14.27 |
L |
0.045 |
0.060 |
1.15 |
1.52 |
N |
0.190 |
0.210 |
4.83 |
5.33 |
Q |
0.100 |
0.120 |
2.54 |
3.04 |
R |
0.080 |
0.110 |
2.04 |
2.79 |
S |
0.045 |
0.055 |
1.15 |
1.39 |
T |
0.235 |
0.255 |
5.97 |
6.47 |
U |
0.000 |
0.050 |
0.00 |
1.27 |
V |
0.045 |
±±± |
1.15 |
±±± |
Z |
±±± |
0.080 |
±±± |
2.04 |
STYLE 1:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
CASE 221A±06
TO±220AB
ISSUE Y
Motorola Bipolar Power Transistor Device Data |
5 |