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M27C1024

1 Megabit (64K x16) UV EPROM and OTP ROM

VERY FAST ACCESS TIME: 55ns

COMPATIBLE with HIGH SPEED MICROPROCESSORS, ZERO WAIT STATE

LOW POWER ºCMOSº CONSUMPTION:

± Active Current 35mA

± Standby Current 100μA

40

 

 

 

PROGRAMMING VOLTAGE: 12.75V

1

 

ELECTRONIC SIGNATURE for AUTOMATED

FDIP40W (F)

PLCC44 (C)

PROGRAMMING

 

 

PROGRAMMING TIME of AROUND 6 sec. (PRESTO II ALGORITHM)

DESCRIPTION

The M27C1024 is a 1 Megabit UV erasable and electrically programmable read only memory (EPROM). It is organized as 65,536 words by 16 bits.

The 40 pin Ceramic Frit Seal Window package has a transparent lid which allows the user to expose the chip to ultraviolet light to erase the bit pattern. A new pattern can then be written to the device by following the programming procedure.

For application where the content is programmed only one time and erasure is not required, the M27C1024 is offered in a Plastic Leaded Chip Carrier package.

Table 1. Signal Names

A0 - A15

Address Inputs

Q0 - Q15

Data Outputs

E

Chip Enable

G

Output Enable

P

Program

VPP

Program Supply

VCC

Supply Voltage

VSS

Ground

TSOP40 (N) 10 x 14mm

Figure 1. Logic Diagram

VCC

VPP

16

16

A0-A15

Q0-Q15

P M27C1024

E

G

VSS

AI00702B

March 1996

1/13

M27C1024

Figure 2A. DIP Pin Connections

VPP

1

 

40

VCC

E

2

 

39

P

Q15

3

 

38

NC

Q14

4

 

37

A15

Q13

5

 

36

A14

Q12

6

 

35

A13

Q11

7

 

34

A12

Q10

8

 

33

A11

Q9

9

 

32

A10

Q8

10

M27C1024

31

A9

VSS

11

30

VSS

Q7

12

 

29

A8

Q6

13

 

28

A7

Q5

14

 

27

A6

Q4

15

 

26

A5

Q3

16

 

25

A4

Q2

17

 

24

A3

Q1

18

 

23

A2

Q0

19

 

22

A1

G

20

 

21

A0

 

 

AI00703

 

Warning: NC = Not Connected.

Figure 2C. TSOP Pin Connections

A9

1

 

40

VSS

A10

 

 

 

A8

A11

 

 

 

A7

A12

 

 

 

A6

A13

 

 

 

A5

A14

 

 

 

A4

A15

 

 

 

A3

NC

 

 

 

A2

P

 

 

 

A1

VCC

10

M27C1024

31

A0

VPP

11

(Normal)

30

G

E

 

 

 

DQ0

DQ15

 

 

 

DQ1

DQ14

 

 

 

DQ2

DQ13

 

 

 

DQ3

DQ12

 

 

 

DQ4

DQ11

 

 

 

DQ5

DQ10

 

 

 

DQ6

DQ9

 

 

 

DQ7

DQ8

20

 

21

VSS

 

 

 

AI01582

 

Warning: NC = Not Connected.

Figure 2B. LCC Pin Connections

Q13

Q14

Q15

E

PP

NC

CC

P

NC

A15

A14

V

V

Q12

 

 

 

 

1

44

 

 

 

A13

 

 

 

 

 

 

 

 

 

Q11

 

 

 

 

 

 

 

 

 

A12

Q10

 

 

 

 

 

 

 

 

 

A11

Q9

 

 

 

 

 

 

 

 

 

A10

Q8

 

 

 

 

 

 

 

 

 

A9

VSS 12

 

 

 

M27C1024

 

 

 

34 VSS

NC

 

 

 

 

 

 

 

 

 

NC

Q7

 

 

 

 

 

 

 

 

 

A8

Q6

 

 

 

 

 

 

 

 

 

A7

Q5

 

 

 

 

 

 

 

 

 

A6

Q4

 

 

 

 

23

 

 

 

 

A5

 

 

 

 

 

 

 

 

 

 

Q3

Q2

Q1

Q0

G

NC

A0

A1 A2

A3

A4

 

 

 

 

 

 

 

 

 

 

AI00704

Warning: NC = Not Connected.

DEVICE OPERATION

The modes of operations of the M27C1024 are listed in the Operating Modes table. A single 5V power supply is required in the read mode. All inputs are TTL levels except for Vpp and 12V on A9 for Electronic Signature.

Read Mode

The M27C1024 has two control functions, both of which must be logically active in order to obtain data at the outputs. Chip Enable (E) is the power control and should be used for device selection. Output Enable (G) is the output control and should be used to gate data to the output pins, independent of device selection. Assuming that the addresses are stable, the address access time

(tAVQV) is equal to the delay from E to output (tELQV). Data is available at the output after a delay of tOE

from the falling edge of G, assuming that E has been low and the addresses have been stable for at least tAVQV-tGLQV.

Standby Mode

The M27C1024 has a standby mode which reduces the active current from 35mA to 100μA.

The M27C1024 is placed in the standby mode by applying a TTL high signal to the E input. When in the standbymode, the outputs are in a high impedance state, independent of the G input.

2/13

 

 

 

M27C1024

Table 2. Absolute Maximum Ratings (1)

 

 

Symbol

Parameter

Value

Unit

TA

Ambient Operating Temperature

±40 to 125

°C

TBIAS

Temperature Under Bias

±50 to 125

°C

TSTG

Storage Temperature

±65 to 150

°C

VIO (2)

Input or Output Voltages (except A9)

±2 to 7

V

VCC

Supply Voltage

±2 to 7

V

(2)

A9 Voltage

±2 to 13.5

V

VA9

VPP

Program Supply Voltage

±2 to 14

V

Notes: 1. Except for the rating ºOperating Temperature Rangeº, stresses above those listed in the Table ºAbsolute Maximum Ratingsº may cause permanent damage to the device. These are stress ratings only and operation of the device at these or any other conditions above those indicated in the Operating sections of this specification is not implied. Exposure to Absolute Maximum Rating conditions for extended periods may affect device reliability. Refer also to the SGS-THOMSON SURE Program and other relevant quality documents.

2.Minimum DC voltage on Input or Output is ±0.5V with possible undershoot to ±2.0V for a period less than 20ns. Maximum DC voltage on Output is VCC +0.5V with possible overshoot to VCC +2V for a period less than 20ns.

Table 3. Operating Modes

Mode

E

G

P

A9

VPP

Q0 - Q15

Read

VIL

VIL

VIH

X

VCC or VSS

Data Output

Output Disable

VIL

VIH

X

X

VCC or VSS

Hi-Z

Program

VIL

X

VIL Pulse

X

VPP

Data Input

Verify

VIL

VIL

VIH

X

VPP

Data Output

Program Inhibit

VIH

X

X

X

VPP

Hi-Z

Standby

VIH

X

X

X

VCC or VSS

Hi-Z

Electronic Signature

VIL

VIL

VIH

VID

VCC

Codes

Note: X = VIH or VIL, VID = 12V ±0.5V

 

 

 

 

 

 

Table 4. Electronic Signature

Identifier

A0

Q7

Q6

Q5

Q4

Q3

Q2

Q1

Q0

Hex Data

Manufacturer's Code

VIL

0

0

1

0

0

0

0

0

20h

Device Code

VIH

1

0

0

0

1

1

0

0

8Ch

Two Line Output Control

Because EPROMs are usually used in larger memory arrays, this product features a 2 line control function which accommodates the use of multiple memory connection. The two line control function allows:

a.the lowest possible memory power dissipation,

b.complete assurance that output bus contention will not occur.

For the most efficient use of these two control lines, E should be decoded and used as the primary device selecting function, while G should be made a common connection to all devices in the array and connected to the READ line from the system control bus. This ensures that all deselected memory devices are in their low power standby mode and that the output pins are only active when data is required from a particular memory device.

3/13

M27C1024

AC MEASUREMENT CONDITIONS

Input Rise and Fall Times

20ns

Input Pulse Voltages

0.4V to 2.4V

Input and Output Timing Ref. Voltages

0.8V to 2.0V

Note that Output Hi-Z is defined as the point where data is no longer driven.

Figure 3. AC Testing Input Output Waveforms

2.4V

2.0V

0.8V

0.4V

AI00826

Figure 4. AC Testing Load Circuit

1.3V

1N914

3.3kΩ

DEVICE

UNDER OUT TEST

CL = 100pF

CL includes JIG capacitance

AI00828

Note: For 55ns class: input pulse voltages are 0V to 3V, input output test points are at 1.5V, CL is 30 pF.

Table 5. Capacitance (1) (TA = 25 °C, f = 1 MHz )

Symbol

Parameter

Test Condition

Min

Max

Unit

CIN

Input Capacitance

VIN = 0V

 

6

pF

COUT

Output Capacitance

VOUT = 0V

 

12

pF

Note: 1. Sampled only, not 100% tested.

Table 6. Read Mode DC Characteristics (1)

(TA = 0 to 70 °C, ±40 to 85 °C or ±40 to 105 °C; VCC = 5V ± 5% or 5V ± 10%; VPP = VCC)

Symbol

Parameter

Test Condition

Min

Max

Unit

ILI

Input Leakage Current

0V VIN VCC

 

±10

μA

ILO

Output Leakage Current

0V VOUT VCC

 

±10

μA

ICC

Supply Current

E = VIL, G = VIL,

 

35

mA

IOUT = 0mA, f = 5MHz

 

 

 

 

 

 

ICC1

Supply Current (Standby) TTL

E = VIH

 

1

mA

ICC2

Supply Current (Standby) CMOS

E > VCC ± 0.2V

 

100

μA

IPP

Program Current

VPP = VCC

 

100

μA

VIL

Input Low Voltage

 

±0.3

0.8

V

(2)

Input High Voltage

 

2

VCC + 1

V

VIH

 

VOL

Output Low Voltage

IOL = 2.1mA

 

0.4

V

VOH

Output High Voltage TTL

IOH = ±400μA

2.4

 

V

 

IOH = ±100μA

 

 

 

 

Output High Voltage CMOS

VCC ± 0.7V

 

V

Notes: 1. VCC must be applied simultaneously with or before VPP and removed simultaneously with or after VPP. 2. Maximum DC voltage on Output is VCC +0.5V.

4/13

M27C1024

Table 7A. Read Mode AC Characteristics (1)

(TA = 0 to 70 °C, ±40 to 85 °C or ±40 to 105 °C; VCC = 5V ± 5% or 5V ± 10%; VPP = VCC)

 

 

 

 

 

 

 

M27C1024

 

 

 

 

Symbol

Alt

Parameter

Test Condition

-55 (3)

-70

-80

-90

Unit

 

 

 

 

Min

Max

Min

Max

Min

Max

Min

Max

 

tAVQV

tACC

Address Valid to

E = VIL, G = VIL

 

55

 

70

 

80

 

90

ns

Output Valid

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

tELQV

tCE

Chip Enable Low to

G = VIL

 

55

 

70

 

80

 

90

ns

Output Valid

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

tGLQV

tOE

Output Enable Low to

E = VIL

 

30

 

35

 

40

 

45

ns

Output Valid

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

(2)

tDF

Chip Enable High to

G = VIL

0

30

0

30

0

30

0

30

ns

tEHQZ

Output Hi-Z

 

 

 

 

 

 

 

 

 

 

 

 

(2)

tDF

Output Enable High to

E = VIL

0

30

0

30

0

30

0

30

ns

tGHQZ

Output Hi-Z

 

 

 

 

 

 

 

 

 

 

 

 

tAXQX

tOH

Address Transition to

E = VIL, G = VIL

0

 

0

 

0

 

0

 

ns

Output Transition

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Notes: 1. VCC must be applied simultaneously with or before VPP and removed simultaneously with or after VPP.

2.Sampled only, not 100% tested.

3.See specific AC Measurement Condition for -55 class.

Table 7B. Read Mode AC Characteristics (1)

(TA = 0 to 70 °C, ±40 to 85 °C or ±40 to 105 °C; VCC = 5V ± 5% or 5V ± 10%; VPP = VCC)

 

 

 

 

 

 

 

M27C1024

 

 

 

Symbol

Alt

Parameter

Test Condition

-10

 

-12

 

-15

-20/-25

Unit

 

 

 

 

 

 

 

 

 

 

 

Min

Max Min Max Min Max Min Max

 

tAVQV

tACC

Address Valid to

E = VIL, G = VIL

 

100

 

120

 

150

 

200

ns

Output Valid

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

tELQV

tCE

Chip Enable Low to

G = VIL

 

100

 

120

 

150

 

200

ns

Output Valid

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

tGLQV

tOE

Output Enable Low to

E = VIL

 

50

 

60

 

60

 

70

ns

Output Valid

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

(2)

tDF

Chip Enable High to

G = VIL

0

30

0

40

0

50

0

60

ns

tEHQZ

Output Hi-Z

 

 

 

 

 

 

 

 

 

 

 

 

(2)

tDF

Output Enable High to

E = VIL

0

30

0

40

0

50

0

60

ns

tGHQZ

Output Hi-Z

 

 

 

 

 

 

 

 

 

 

 

 

tAXQX

tOH

Address Transition to

E = VIL, G = VIL

0

 

0

 

0

 

0

 

ns

Output Transition

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Notes: 1. VCC must be applied simultaneously with or before VPP and removed simultaneously with or after VPP. 2. Sampled only, not 100% tested.

5/13

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